Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2813-2814
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset ΔEc was determined to be 0.260 eV, corresponding to 63% of ΔEg. A calculation was also carried out based on this tunneling model by using the experimental value of ΔEc=E2−E1=0.260 eV, and good agreement between the experimental and calculated curves is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109218
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