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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7372-7375 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of Si doping behavior in GaAs layers on (110) and (001) surfaces under the same growth conditions shows that the autocompensation ratio in (110) layers is usually higher than in (001) layers. However, under certain conditions (low substrate temperature, high As4 pressure, and low Si flux), the free electron concentration in the (110) layers can actually be higher. We attribute this behavior to Ga vacancy traps in the (001) surface layers; whereas layers on the (110) surface remain almost defect free. Our results help to clarify the mechanism of defect generation in the (001) layers, which leads to reduced carrier concentration at low growth temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2813-2814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset ΔEc was determined to be 0.260 eV, corresponding to 63% of ΔEg. A calculation was also carried out based on this tunneling model by using the experimental value of ΔEc=E2−E1=0.260 eV, and good agreement between the experimental and calculated curves is obtained.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 47 (1991), S. 17-21 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Scanning tunneling microscopy (STM) was used to study morphological changes of a Pt thin film deposited on highly oriented pyrolytic graphite (HOPG) during an annealing process. In air, it was possible to image the morphology of the thin film with a vertical resolution of 0.5 Å and a lateral resolution of 20 Å. Surface structural change was observed after the annealing processes. When the annealing temperature was below 573 K, surface morphology changed only slightly. Between 573 and 873 K, the originally uniformly distributed rolling hills of Pt coagulated into larger clumps. Above 873 K, Pt crystal facets started to form on the surface. At 1123 K, a large portion of the surface turned into well defined Pt crystal facets. Above 1123 K, the Pt film started to crack and formed scattered crystals on the HOPG surface. A complementary X-ray diffraction measurement showed that the crystallized Pt film was preferentially oriented with the (111) plane parallel to the substrate graphite (0001) basal plane, indicating epitaxy of the Pt overlayer with the graphite substrate underneath.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Chromatography A 662 (1994), S. 203-218 
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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