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  • Electronic Resource  (5)
  • 1985-1989  (2)
  • 1965-1969  (3)
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  • Electronic Resource  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2566-2570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion bombardment of aluminum contacts on n-type silicon has been investigated by measuring the I-V characteristics before and after implantation of Ar+. These characteristics have been quantified in terms of the saturation current, the ideality factor, and the diode series resistance. Before implantation, large variations in these parameters were found. After implantation, much more uniform characteristics were obtained but they were still far from ideality. Auger electron spectroscopy showed that very little mixing took place, but that the concentration of oxygen at the interface decreased. From α-particle channeling analysis it was ascertained that the implantation caused severe damage to the silicon. This damage was probably responsible for the observed increase in the series resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338927
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4775-4777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminium Schottky contacts on n-Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α-particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341197
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Die Reaktion11B(d, α)9Be im Energiebereich von 0,7 bis 2,2 MeV (1969)
    Springer
    The European physical journal 222 (1969), S. 138-143 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Excitation functions were measured from 0.7 to 2.2 MeV for the α0 -, α1-, α2- and α3-groups at an angle ofθ L=90°. Two broad maxima were found in all four cases, suggesting the existance of resonances in the13C-compound nucleus. A problem, however, arises, as the first maximum appears at a bombarding energy of 1.15 MeV for the α0- and α1-groups, whilst it is shifted to 1.35 MeV in the excitation curves for the α2- and α3-groups. The second maximum appears at 1.85 MeV in all curves. Angular distributions were measured at 7 energies between 1.0 and 2.2 MeV for the α0- and α2-transitions. The coefficients of the first four Legendre polinomials, describing these distributions, are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01392291
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Elastische Streuung von Deuteronen an10B bei niedrigen Energien (1969)
    Springer
    The European physical journal 219 (1969), S. 124-130 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The excitation curve for the elastic scattering of deuterons from10B in the energy range from 1.0 to 2.0 MeV has been measured atθ L =135°. Strong indications for compound nucleus resonances in12C at bombarding energies of approximately 1.0 and 1.9 MeV were observed. Angular distributions from 80 to 175° were determined in 200 keV steps from 1.0 to 2.0 MeV. Optical model analysis were made both for volume absorption and surface absorption potentials. Reasonable fits were obtained at energies up to 1.6 MeV with one set of parameters in both cases, whilst for the higher energies strong deviations were found with the same parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01392953
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Die Reaktion10B(d,α)8Be im Energiebereich von 0,5 bis 2 MeV (1968)
    Springer
    The European physical journal 211 (1968), S. 373-379 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Angular distributions of the α0-group and the α1-group were measured at 6 energies between 0.5 and 1.0 MeV and the coefficients of the Legendre polinomials have been calculated. Also given are relative cross section curves for the two α-groups between 0.5 and 2.0 MeV. The possibility of explaining the α0-excitation curve by assuming only a few broad compound state resonances is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01379959
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    Paper (German National Licenses)
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