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  • 1
    Electronic Resource
    Electronic Resource
    The effect of Ar+ ion implantation on the electrical characteristics of Cr/P-Si Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2757-2759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of 150-keV Ar+ ion implantation of Cr/p-Si(100) Schottky contacts was studied by measuring the current voltage characteristics over the temperature range 293–373 K before and after different doses of ion bombardment. The characteristics obtained were used in a least-squares fitting procedure to determine the ideality constant n, the saturation current IS, the series resistance R, and the Schottky barrier height Φb. Ar+ ion bombardment resulted in higher values for n and R but a lower value for IS. The value of Φb increased by 10%. The apparent reason for the increase in Φb for p-type contacts as well as the decrease for n-type contacts is discussed in reference to the identical behavior earlier reported for low-energy inert gas ion beam etching and reactive ion etching of Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351049
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4775-4777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminium Schottky contacts on n-Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α-particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341197
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Ar+ ion bombardment on the electrical characteristics of Al/n-Si contacts (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2566-2570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion bombardment of aluminum contacts on n-type silicon has been investigated by measuring the I-V characteristics before and after implantation of Ar+. These characteristics have been quantified in terms of the saturation current, the ideality factor, and the diode series resistance. Before implantation, large variations in these parameters were found. After implantation, much more uniform characteristics were obtained but they were still far from ideality. Auger electron spectroscopy showed that very little mixing took place, but that the concentration of oxygen at the interface decreased. From α-particle channeling analysis it was ascertained that the implantation caused severe damage to the silicon. This damage was probably responsible for the observed increase in the series resistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338927
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of optically active defects created by noble gas ion bombardment of silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4075-4080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modification in the G-line (969.5 meV) and the C-line (789.4 meV) photoluminescence (PL) intensities were studied as a function of the fluence, energy, and mass of the bombarding ions (He, Ne, Ar, and Kr). The intensities of the luminescent lines induced by 1 keV Ne bombardment were found to decrease with increasing dose after reaching a maximum at about 1×1012 ions/cm2. Considerable reductions in the intensities of the G- and C-lines were also recorded during bombardment using heavier noble gas ions and they have been attributed to the higher rates of nuclear energy deposition with increasing bombarding ion mass. The incident ion energy at which the PL intensities of the spectral lines reached their maximum values was found to be dependent on the ion mass and fluence. We have explained the decrease in PL intensities of the G-line and C-line to be due to the introduction of increased amounts of nonradiative recombination centers with increasing incident ion dose and mass. Further, the integral sum of defects induced during bombardment as a function of projected ion range and excitation depth of the Ar-ion laser has been used to qualitatively describe the decrease in the intensities of the two lines. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367227
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  • 5
    Electronic Resource
    Electronic Resource
    AES and SIMS investigations of the oxide films on Fe-40Cr-Ru alloys (1992)
    Springer
    Journal of materials science 27 (1992), S. 1818-1826 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Auger and SIMS depth profiling have been used to investigate the effect of ruthenium addition on the oxidation behaviour of the Fe-40Cr-Ru alloys oxidized in air at 500 °C. Auger results revealed that the oxide films formed on the Fe-40Cr-Ru alloys consisted of a thin iron oxide external layer and a chromium-rich internal layer. Ruthenium was not found in these oxide layers. Secondary ion mass spectrometry measurements also indicated a thin Fe+-rich film as an outer layer with a predominantly chromium oxide in the internal layer of the film. Furthermore, ruthenium was incorporated in the entire oxide film and promoted the formation of a thin compact film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01107209
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  • 6
    Electronic Resource
    Electronic Resource
    Preferential sputtering of GaAs (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 491-495 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low-energy (0.65-3 keV) Ar+ ions were used to sputter (100) and (110) GaAs. Preferential sputtering effects were investigated by means of Auger electron spectroscopy. The results show that the equilibrium sputtered surface composition on both surfaces is depleted in As. No sample orientation effects were observed. However, the equilibrium compositions of the sputtered surfaces become increasingly Ga-enriched by increasing the energy of the bombarding ions. The sputtered surface composition is independent of the angle of incidence of the bombarding Ar+ ions. For the different experimental conditions, the mean final surface compositions varied from GaAs0.89 to GaAs0.69. These values are in broad agreement with other reported AES studies. This agreement is probably due to the fact that the sputtered surface composition is independent of the angle of incidence of the ions on the GaAs sample.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180706
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 433-439 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples of InP(100) n-doped with S atoms to 4 × 1018 cm-3 and to 6 × 1018 cm-3 were bombarded with 0.5 and 5 keV argon ions. The angle of incidence of the 5 keV ions was 71° with respect to the sample normal and 41° for the 0.5 keV ions. The resulting topography development was investigated by means of atomic force microscopy (AFM) and transmission electron microscopy (TEM) of Cr-C replicas of the bombarded surfaces. There was a correlation between the AFM images and those from the TEM replicas. At the same magnification the AFM images showed more detail. The surface roughness in the AFM images and those from the TEM replicas. At the same magnification the AFM images showed more detail. The surface roughness in the AFM images was quantified using the software of the AFM instrument. In the range 5 × 1014-2 × 1018 Ar+ cm-2, there was a linear relationship between the roughness parameter and the logarithm of the ion dose density. This fact excludes a seeding sputter erosional theory for the explanation of the development of bombardment-induced topography on InP. At the higher does densities, ripple formation was observed. The dose density dependence of average wavelength of the ripples did not correlate with the predictions of the Bradley-Harper theory.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740230702
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic force microscopy investigation of ion-bombarded InP: Effect of angle of ion bombardment (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 503-510 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Samples of InP(100) n-doped with S atoms to 4 × 10 18 cm-3, were bombarded with 0.5 keV argon ions and with krypton ions of energy 0.5 and 5 keV at various angles to the sample normal. The ion dose density for 0.5 keV Ar+ and 0.5 keV kr+ bombardment was 5 × 1016 cm -2,whereas for 5 keV kr+ it was 2 × 1016 ions cm-2. The ion current density was set to a low value of 5 × 1013 cm-2 s-1 to minimize the sample heating. The resulting topographgy development was investigated with an atomic force microscopoe. The surface roughness was quantified and analysed as a function of angle of ion bombardment. Two- and three-dimensional images showing various types of topography and sputter cone size (height and width) are also presented. Close resemblance between the dependency of roughness and sputter rate on angle of ion incidence suggests a correlation between the two.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740240805
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon ion bombardment of Sb/Si contacts (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 341-346 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Si+ bombardment of Sb/n-Si Schottky contacts significantly affects the values of some Schottky parameters even at low does densities. The parameters considered are the ideality constant n, the saturation current density Is and the series resistance R. Before implantation these parameters exhibited large variations due to interface conditions. After implantation more uniform I-V characteristics were observed. Implantation led to higher values for the ideality constant and the series resistance and lower values for the saturation current. The ideality factor showed a decrease with increasing implantation dose. The saturation current and series resistance did not show any dose dependence. The compositional/structural properties of the contacts after ion bombardment are altered at high dose densities. For dose densities φ ≥ 5 × 1014 Si+ cm-2, α-particle channelling showed the silicon substrate to be partly amorphized. This amorphization increased with increasing dose densities. AES and RBS measurements found no evidence of silicide formation. Only slight mixing was observed. Other experimental and theoretical studies either confirm our measurements or confirm the trend of our measurements.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190164
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  • 10
    Electronic Resource
    Electronic Resource
    Argon bombardment-induced topography development on InP (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 538-542 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: InP (100) samples, n-doped with S atoms to 4 × 1018 cm-3 and to 6 × 1018 cm-3, were bombarded by low energy (0.5 to 5 keV) argon ions. After bombardment, the surfaces exhibited the formation of small protrusions on the surface. These sputter cones appeared after an ion dose of the order of 1015 Ar+ cm-2. These cones grow slowly with increasing ion dose. At a constant dose, the sizes and density of these cones depended on the angle of incidence of the argon ions. At an ion incidence angle of approximately 41°, a maximum was obtained in the topography development. The sputter-induced morphology had, at a constant dose density and angle of incidence, only a slight dependence on the energy of ions in the 0.5 to 5 keV range. Sputtering at the two lower energies (0.5 and 1 keV) resulted in an increase in the surface roughness compared to the higher ion energies. No synergic effects of simultaneous electron and ion bombardment were observed in the as-factory received samples. When the angle of incidence of the bombarding ions was kept fixed, the degree of sputter-induced surface topography remained constant for different relative orientations of the (100) InP substrates. Seeding cones were observed under appropriate conditions, but were not systematically investigated.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7402201114
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