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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5864-5873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The goal of this work was to understand the correlation between microscopic material parameters and the dielectric function of candidate materials for applications in the microwave frequency range. The structure and dielectric properties of Ba2+(Y3+1/2Ta5+1/2)O3 (BYT), a typical representative of the Ba(B3+1/2B5+1/2)O3 complex perovskite family, has been investigated from 102 to 1014 Hz and from 20 to 600 K. At Tc=253±1 K, BYT undergoes an equitranslational improper ferroelastic, second-order phase transition, characterized by the tilting of the oxygen octahedra. The space group symmetry changes from Fm3¯m, in the high temperature phase, to I4/m below Tc. The existence of an intermediate temperature region (Tc−40〈T〈Tc) has been observed, where the compound exhibits structural and dielectric properties different from those in the well-defined high (T(approximately-greater-than)Tc) and low (T〈Tc−40 K) temperature phases. Infrared reflectivity (1012–1014 Hz) and submillimeter transmission (1011–3×1012 Hz) measurements yield dielectric losses which are believed to be mainly of intrinsic origin (one- and two-phonon absorption). Comparing a theory of two-phonon difference absorption processes, due to thermally activated polar branches, with the loss measured at 400–1400 GHz, the intrinsic loss can be extrapolated to lower frequencies. At 10 GHz the extrapolated value is about 1/4 of the loss actually measured in a BYT resonator. Nonpolar phonons, including the soft branch, which have not been considered for the extrapolation procedure, are partially responsible. The temperature dependencies indicate the soft branch to be of considerable importance for intrinsic losses. Oxygen vacancies can be excluded as an extrinsic loss source, as sintering and annealing in N2, air, and O2 had no measurable influence on the loss at 10 GHz.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 89 (1982), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 7 (1974), S. 277-283 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 10 (1977), S. 647-653 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 14 (1981), S. 118-124 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1070-1074 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the deep level band (2.0–3.0 eV). Power resolved measurements indicate that the 3.424 eV emission is a donor–acceptor pair transition. In the deep level region peaks are observed in all spectra at 2.3 and 2.6 eV. This suggests that the 2.3 and 2.6 eV peaks are related and a model is proposed to explain this luminescence. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5837-5839 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties and microstructure have been investigated as a function of lamination period in 1-μm-thick FeAlN/Al2O3 multilayers. It has been seen that coercivity is weakly dependent on FeAlN thickness in the lamination, consistent with a change in morphology. Within this thickness range, Hk is reduced and dispersion increases accordingly. As the deposition angle is increased from 0° to 40°, there is little change in coercivity, while Hk increases, from 4 to 8 Oe. Saturation magnetostriction was found to exhibit a strong linear dependence (from +1×10−6 to −5×10−6) over the thickness range studied, with weak dependence on the deposition angle. High frequency permeability degraded with increasing FeAlN thickness, which is believed to reflect the reduced anisotropy in these samples. Microstructural analysis via x-ray diffraction and transmission electron microscopy has indicated that the films contain predominately α-Fe, and that Al2O3 spacer layers of 20 Å are sufficient to interrupt columnar grain growth. Furthermore, columnar grains formed in samples with thick FeAlN layers do not exhibit canting when grown on tilted substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4646-4650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of hydrogenated amorphous carbon (a-C:H) have been evaluated as quarter-wave, antireflection dielectric coatings for application in magneto-optic data storage media. The films, which are produced by plasma deposition from methane, have low optical absorption at 830 nm wavelength, high refractive index (n≈2.1), and provide enhancement of the polar Kerr rotation (θk) when used in conjunction with rare-earth–transition-metal (RE–TM), TbFe, or TbFeCo alloys. The chemical stability, inertness, and homogeneity of the carbon films makes them effective diffusion barriers to oxygen or water vapor and thus provides excellent protection against environmental oxidation of the RE–TM layer. Dynamic disk performance data show improved write sensitivity of the media when used with a-C:H dielectric layers.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 682-688 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-element rotating-polarizer ellipsometer (psi-meter) was used for in situ characterization of the thermodynamic and kinetic behavior of poly-(methyl methacrylate), PMMA, thin films (1.2 μm) in solvent/nonsolvent binary mixtures of methyl ethyl ketone/isopropanol (MEK/IPA) and methyl isobutyl ketone/methanol (MIBK/MeOH). Thermodynamic effects were inferred from equilibrium behavior by the degree of swelling and polymer-solvent solubility. A sharp transition between complete solubility and almost total insolubility was observed in a narrow concentration range near 50:50 (by volume) solvent/nonsolvent for both MEK/IPA and MIBK/MeOH. In the insoluble regime, the polymer was found to swell up to three times the initial thickness. At 50:50 MEK/IPA, a temperature decrease from 24.8 to 18.4 °C caused a change from complete dissolution to combined swelling/dissolution behavior and rendered the PMMA film only 68% soluble. Kinetic effects were determined by dissolution and penetration rate measurements. A constant penetration velocity was observed for almost all compositions for both binary solvent mixtures with Case II transport assumptions providing good agreement with experimental results. For MEK/IPA, penetration rates increased with increasing MEK concentration. For MIBK/MeOH, however, a maximum was observed at 60:40 MIBK/MeOH.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3907-3914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possible domain states of perovskite ferroelectrics under applied fields are reviewed and, as an illustration, a phenomenological study of barium titanate is carried out. Electric field-temperature phase diagrams, the polarization, and the lattice strain of barium titanate single crystals are calculated from the Landau–Ginzburg–Devonshire theory of ferroelectrics for applied fields up to 20 MV m−1 and for temperatures from 1 to 450 K. The calculations are carried out for fields applied along the pseudocubic [001], [101], and [111] axes, revealing the temperature and field dependence of all the ferroelectric phase transitions. Large piezoelectric coefficients can be identified close to field-induced transitions. Good agreement is seen with experimental data for the piezoelectric coefficient parallel to [001] over a wide range of temperature. The series of transitions predicted for increasing field parallel to [111] at room temperature is qualitatively similar to that observed experimentally but with somewhat larger critical fields and lower piezoelectric coefficients. Similarities are noted between the phase diagrams for fields along [001] and [111] and those describing PbBa2+ and ZrTi4+ substitutions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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