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  • Electronic Resource  (7)
  • 71.55  (3)
  • 72.80.Cw  (2)
  • Detergents  (2)
  • 1
    Electronic Resource
    Electronic Resource
    SANS-measurements on micellar solutions of perfluoro-detergents (1982)
    Springer
    Colloid & polymer science 260 (1982), S. 435-443 
    Details
    ISSN: 1435-1536
    Keywords: Detergents ; Micelles ; Short Range Order ; Neutron Scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Small-angle-neutron-scattering-(SANS)-measurements were carried out with soulutions of Tetramethylam-moniumperfluoroctanesulfonate (TMAFOS) and Diethylammoniumperfluorononanoate (DEAFN) in pure D2O and in mixtures of D2O and H2O. For the TMAFOS-solutions the experimentally observed scattering functions, i.e. the coherent scattering intensity as a function of the scattering angles, could be fitted very well for large scattering angles with the theoretically calculated scattering function for rodlike particles and the dimensions of the rods could be evaluated from these fits. The radius of the rods was independent of the detergent concentration and equal to the double length of a detergent molecule. For small scattering angles the scattering function showed a maximum which was due to nearest neighbour order between the aggregates resulting from the intermicellar interaction. From this maximum a mean distance between the aggregates and hence the lengths L of the rods could be calculated. For the DEAFN-solutions the observed scattering function showed no maximum what clearly indicates the absence of nearest neighbour order between the aggregates. The experimentally observed scattering functions could not be fitted on the basis of rodlike aggregates, but agreed rather well with the theoretically calculated scattering functions for disclike aggregates and also for vesicle-like double layers. The dimensions for the discs could be evaluated from the fits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01448149
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  • 2
    Electronic Resource
    Electronic Resource
    Defect-level analysis of semiconductors by a new differential evaluation ofn(1/T)-characteristics (1979)
    Springer
    Applied physics 19 (1979), S. 307-312 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900474
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  • 3
    Electronic Resource
    Electronic Resource
    On the density of localized levels in amorphous silicon (1979)
    Springer
    Applied physics 18 (1979), S. 427-429 
    Details
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899699
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  • 4
    Electronic Resource
    Electronic Resource
    Differential evaluation of the Hall effect in silicon with oxygen-related donors (1984)
    Springer
    Applied physics 33 (1984), S. 47-50 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free-electron concentration as a function of the temperature is analyzed differentially for silicon with oxygen-related donors formed by annealing at 430 °C. The analysis yields defect levels atE c−0.25 eV,E c−0.14eV, andE c−0.055 eV assuming the degeneracy factors to be unity. The corresponding defect level concentrations are approximately proportional to the annealing time. Their formation rates are between 1 and 3×1010cm−3s−1 at 430 °C annealing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197085
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  • 5
    Electronic Resource
    Electronic Resource
    Charge carrier statistics of semiconductors containing defects with negative electronic correlation energy (1982)
    Springer
    Applied physics 27 (1982), S. 39-47 
    Details
    ISSN: 1432-0630
    Keywords: 71.55.Fr ; 72.80.Cw ; 71.45.Gm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197545
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886040
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  • 7
    Electronic Resource
    Electronic Resource
    Small angle neutron scattering measurements on micellar solutions of perfluor detergents (1983)
    Springer
    Colloid & polymer science 261 (1983), S. 1043-1049 
    Details
    ISSN: 1435-1536
    Keywords: Detergents ; micelles ; vesicles ; neutron scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Small angle neutron scattering experiments (SANS) were carried out with solutions of the Lithium salt of Perfluoroctanoic acid (LIPFO) in pure D2O and mixtures of D2O and H2O and Diethylammoniumperfluorononanoate (DEAFN). For LIPFO the scattering intensity as a function of the scattering angles could be fitted with calculated scattering functions for spheres. The contrast variation method allowed us to extract accurate values for the radius, the concentrations of the micelles and the aggregation number. For DEAFN the observed scattering function could be fitted on the basis of spherical vesicles with an appreciable variance in diameter. For several solutions these parameters and the concentration of the vesicles could be evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01421713
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