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  • 1
    Electronic Resource
    Electronic Resource
    Complex I Inhibitors Induce Dose-Dependent Apoptosis in PC12 Cells: Relevance to Parkinson's Disease (1994)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 63 (1994), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The mode of cell death in Parkinson's disease (PD) substantia nigra is uncertain. However, evidence is accumulating that certain of the biochemical abnormalities present in PD nigra at the time of death may precipitate apoptosis. We have investigated the mode of death induced by complex I inhibition of dopaminergic cell cultures, and our results suggest that both 1-methyl-4-phenylpyridinium and rotenone cause apoptosis at low concentrations and necrosis at high concentrations. This dose-dependent shift in the mode of cell death induced by these mitochondrial toxins may have important implications for the mechanism of neuronal cell death in PD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1994.63051987.x
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  • 2
    Electronic Resource
    Electronic Resource
    Anatomic and Disease Specificity of NADH CoQ1 Reductase (Complex I) Deficiency in Parkinson's Disease (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 55 (1990), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: 1-Methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP) is thought to produce parkinsonism in humans and other primates through its inhibition of complex I. The recent discovery of mitochondrial complex I deficiency in the substantia nigra of patients with Parkinson's disease has provided a remarkable link between the idiopathic disease and the action of the neurotoxin MPTP. This article shows that complex I deficiency in Parkinson's disease is anatomically specific for the substantia nigra, and is not present in another neurodegenerative disorder involving the substantia nigra. Evidence is also provided to show that there is no correlation between l-3,4-dihydroxyphenylalanine therapy and complex I deficiency. These results suggest that complex I deficiency may be the underlying cause of dopaminergic cell death in Parkinson's disease.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1990.tb05809.x
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  • 3
    Electronic Resource
    Electronic Resource
    BIOCHEMISTRY OF METHANOL POISONING-V (1962)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 9 (1962), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1962.tb11853.x
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  • 4
    Electronic Resource
    Electronic Resource
    Irreversible Inhibition of Mitochondrial Complex I by 1-Methyl-4-Phenylpyridinium: Evidence for Free Radical Involvement (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 58 (1992), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Incubation of 10 mM I-methyl-4-phenylpyridinium (MPP+) with sonicated beef heart mitochondria caused an irreversible time-dependent decrease in NADH-ubiquinone-l (CoQ1) reductase activity (52% inhibition after 1 h). Inclusion of glutathione, ascorbate, or catalase in the incubation mixture protected the NADH-CoQ1 reductase activity. These results suggest that the interaction of MPP+ with complex I induces free radical generation, which in turn leads to the irreversible inhibition of complex I activity. The generation of free radicals by neurotoxin-induced inhibition of complex I has important implications for our interpretation of the increased oxidative stress observed in Parkinson's disease substantia nigra and for our understanding of the cause(s) of dopaminergic cell death in this disorder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1992.tb09789.x
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  • 5
    Electronic Resource
    Electronic Resource
    Mitochondrial Complex I Deficiency in Parkinson's Disease (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 54 (1990), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The structure and function of mitochondrial respiratory-chain enzyme proteins were studied postmortem in the substantia nigra of nine patients with Parkinson's disease and nine matched controls. Total protein and mitochondrial mass were similar in the two groups. NADH-ubiquinone reductase (Complex I) and NADH cytochrome c reductase activities were significantly reduced, whereas succinate cytochrome c reductase activity was normal. These results indicated a specific defect of Complex I activity in the substantia nigra of patients with Parkinson's disease. This biochemical defect is the same as that produced in animal models of parkinsonism by 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP) and adds further support to the proposition that Parkinson's disease may be due to an environmental toxin with action(s) similar to those of MPTP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1990.tb02325.x
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  • 6
    Electronic Resource
    Electronic Resource
    Low-level leakage currents in thin silicon oxide films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 319-327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-level leakage currents in thin silicon oxide films were measured before and after the oxides had been stressed at high voltages. Four components of current were identified. These components were the tunneling current, the capacitive current associated with the measurement sweep rate, a negative differential current associated with the voltage sweep through the changing oxide C-V characteristic, and an excess current that occurred after the high-voltage stress. The excess current was due to the charging and discharging of traps generated inside of the oxide by the high-voltage stress. The excess current was proportional to the number of traps generated in the oxide. The magnitude of the excess current could be changed by changes in the measurement procedures due to the charging and discharging of traps. A major portion of the stress-generated excess low-level leakage current may not be a current that flowed through the oxide, but may be a trap charging/discharging current. This paper will concentrate on describing the low-level pretunneling leakage currents and the measurement techniques needed to determine the properties of the excess leakage currents associated with the traps generated inside of the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357147
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  • 7
    Electronic Resource
    Electronic Resource
    Nonequilibrium characteristics of the gate-controlled diode in 6H-SiC (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3205-3207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N+-P gate-controlled diodes are fabricated in the wide band gap semiconductor 6H-SiC by thermal oxidation and ion implantation of nitrogen. Room temperature capacitance-voltage characteristics display a "hook and ledge'' hysteresis, which has been observed in Si gate-controlled diodes at 77 K. In these samples of p-type doping 2.8×1016 cm−3, the surface state density is about 4×1012 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357017
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3042-3045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use the high–low capacitance–voltage technique and the conductance–frequency techniques to characterize the SiO2/SiC interface formed by thermal oxidation of the silicon-face (0001) c-axis, the (112¯0) a-axis, and the (11¯00) a-axis orientations of 6H–SiC. The oxidation rate of the a-axis orientations is 3–5 times higher than that of the silicon face. Interface state densities on the a-axis orientations are a factor of 4–10 times higher than the Si-face c-axis orientation for both n-type and p-type dopings. Maximum oxide electric breakdown fields are about 10–11 MV/cm for both a-axis and c-axis orientations for an oxide thickness of about 60 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361244
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  • 9
    Electronic Resource
    Electronic Resource
    Extremely long capacitance transients in 6H-SiC metal-oxide-semiconductor capacitors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 572-574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured capacitance-time (C-t) transients on n-type 6H-SiC MOS capacitors to obtain information on the generation lifetime near the SiO2/SiC interface. At temperatures between 260 and 370 °C, the capacitance recovery transient is thermally activated with an activation energy of about 2.0 eV. Because of the wide band gap of SiC, these transients are extremely long. As a figure of merit, extrapolation of the high-temperature C-t data indicates a room-temperature recovery time of over 1010 yr. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360643
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  • 10
    Electronic Resource
    Electronic Resource
    Generation and minority-carrier leakage along GaAs surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2098-2104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe electrical measurement on exposed surfaces of n- and p-type GaAs. The n-type surface exhibits substantial electron-hole pair generation and the subsequent escape of generated holes by leakage along the surface. In contrast, the surface of p-type GaAs does not exhibit measurable leakage of minority electrons. These results are significant for all GaAs devices and circuits which are sensitive to small leakage currents, and may provide important clues to the physical and electrical nature of exposed GaAs surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356997
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