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  • 1995-1999  (16)
  • 1965-1969  (28)
  • 1960-1964
  • 1998  (16)
  • 1966  (28)
  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional mapping of the plasma density in the upper atmosphere with computerized ionospheric tomography (CIT) : The 39th annual meeting of division of plasma physics of APS (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2010-2021 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tomographic imaging of the ionosphere is a recently developed technique that uses integrated measurements and computer reconstructions to determine electron densities. The integral of electron density along vertical or oblique paths is obtained with radio transmissions from low-earth-orbiting (LEO) satellite transmitters to a chain of receivers on the earth's surface. Similar measurements along horizontal paths can be made using transmissions from Global Position System (GPS) navigation satellites to GPS receivers on LEO spacecraft. Also, the intensities of extreme ultraviolet (EUV) emissions can be measured with orbiting spectrometers. These intensities are directly related to the integral of the oxygen ion and electron densities along the instrument line of sight. Two-dimensional maps of the ionospheric plasma are produced by analyzing the combined radio and EUV data using computerized ionospheric tomography (CIT). Difficulties associated with CIT arise from the nonuniqueness of the reconstructions, owing to limited angle measurements or nonoptimal receiver location. Improvements in both reconstruction algorithms and CIT measurement systems are being implemented to overcome these difficulties. New imaging systems being developed employ CIT for large area mapping of the plasma densities in the ionosphere. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872872
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  • 2
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 947-990 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01341a075
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 1271-1310 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01342a069
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  • 4
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 1963-2046 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01344a066
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 2384-2430 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01345a072
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  • 6
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 2665-2718 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01346a050
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  • 7
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 3047-3070 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01347a068
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  • 8
    Electronic Resource
    Electronic Resource
    Notes (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 3395-3454 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01348a065
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2328-2333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-i-n photodiodes were fabricated on nitrogen ion implanted undoped ZnSe/n-type ZnSe epilayers grown on n+GaAs (100) substrates by molecular beam epitaxy. To obtain a quasi-uniform p layer doping profile, nitrogen ions at multiple energies and ion doses were implanted at room temperature. The activation of implanted species was carried out by an optimized post-annealing in a nitrogen ambient. Optical studies were performed on the implanted/annealed devices by photoluminescence spectroscopy at 10 K, which indicated donor–acceptor pairs at an energy of 2.7 eV and its phonon replicas with 30 meV intervals. The circular p-i-n diodes with a 1 mm diam contact area showed a device breakdown voltage to be linearly dependent on the thickness of the undoped ZnSe epilayer. For p-i-n diodes fabricated on an initial 0.5 μm thick undoped ZnSe layer, an ideality factor of 1.19 and a reverse bias breakdown voltage of 12 V was observed. A large photocurrent, good linearity with light intensity, and low dark current were observed. A photocurrent/dark current ratio 〉105 was obtained at an illumination intensity of 100 mW/cm2. These devices exhibited a responsivity of 0.025 A/W at a wavelength of 460 nm through the top 200 Å thick metal contacts.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368300
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  • 10
    Electronic Resource
    Electronic Resource
    New method to predict the magnetic properties of thin gauged Si–Fe sheets : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6483-6485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tertiary crystal growth method was used to fabricate thin gauged 3% Si–Fe sheets in order to reduce the thickness of the sheets without deteriorating soft magnetic properties. During the investigation, the magnetic properties of final annealed sheets were found to be directly related to the magnetic properties of final cold rolled sheets. X-ray and transmission electron microscopy were used to understand the above relation. It was found that the fraction of (110) grains at the surface of the final cold rolled sheets significantly affected the final magnetic properties of the final annealed sheets. On the basis of the above argument, the final magnetic properties of the thin gauged Si–Fe sheets can be predicted by the B10 values of the final cold rolled sheets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367702
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