Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
16 (1983), S. 486-492
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
A study of the lattice parameters of boron-doped silicon (1014−1019 cm−3) grown in (111) and (001) directions by the Czochralski technique has been undertaken. Interplanar spacings (d) were measured by the pseudo-Kossel technique to a precision of 0.001%; different procedures to obtain d and the errors are discussed. The crystallographic planes are found to contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the {333} plane, which is more pronounced in high concentrations. An orientation dependence of the diffusion during growth was observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889883010870
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