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Differential evaluation of the Hall effect in silicon with oxygen-related donors (1984)

Hoffmann, H. J. ; Nakayama, H. ; Nishino, T. ; [et al.]

Springer

Applied physics 33 (1984), S. 47-50

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ISSN: 1432-0630

Keywords: 71.55.Fr ; 72.80.Cw

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The free-electron concentration as a function of the temperature is analyzed differentially for silicon with oxygen-related donors formed by annealing at 430 °C. The analysis yields defect levels atE c−0.25 eV,E c−0.14eV, andE c−0.055 eV assuming the degeneracy factors to be unity. The corresponding defect level concentrations are approximately proportional to the annealing time. Their formation rates are between 1 and 3×1010cm−3s−1 at 430 °C annealing temperature.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01197085

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