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Selected-area sputter epitaxy of iron-garnet films (1986)

Krumme, J.-P. ; Doormann, V. ; Strocka, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 2065-2068

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The growth of single-crystal bismuth iron-garnet films by in situ sputter epitaxy has been extended to "selected-area sputter epitaxy'' (SASE) where epitaxial growth is locally impeded by low-energy (102 eV) ion bombardment of the substrate from an argon plasma before film deposition. Then, in a critical range of substrate temperatures, a pattern of epitaxial and amorphous patches evolves during deposition with high geometrical resolution. The optical and structural properties of both SASE phases are investigated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337210

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Quantitative XPS-analysis of tantalum-containing amorphous carbon films (1989)

Grischke, M. ; Brauer, A. ; Benndorf, C. ; [et al.]

Springer

Fresenius' Zeitschrift für analytische Chemie 333 (1989), S. 299-303

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ISSN: 1618-2650

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Summary Amorphous carbon films with different amounts of tantalum, normally used as hard coatings with low friction coefficients (μ〈0.2), were analysed with XPS. Besides the indentification of different chemical states, a quantitative analysis was performed. In this paper we focus on the influence of surface contaminations and on the cleaning process (Ar sputtering) on quantitative XPS data. Depth profiles are presented. To verify the analytical results, the atomic concentrations are determined using own and published reference data. The quantitative XPS data were compared to EPMA measurements (a not surface-sensitive analysing technique), which reflect directly the bulk concentrations.