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Selected-area sputter epitaxy of iron-garnet films (1986)

Krumme, J.-P. ; Doormann, V. ; Strocka, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 2065-2068

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The growth of single-crystal bismuth iron-garnet films by in situ sputter epitaxy has been extended to "selected-area sputter epitaxy'' (SASE) where epitaxial growth is locally impeded by low-energy (102 eV) ion bombardment of the substrate from an argon plasma before film deposition. Then, in a critical range of substrate temperatures, a pattern of epitaxial and amorphous patches evolves during deposition with high geometrical resolution. The optical and structural properties of both SASE phases are investigated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337210

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