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  • 2000-2004  (14)
  • 1985-1989  (25)
  • 2001  (14)
  • 1987  (25)
  • 1
    Electronic Resource
    Electronic Resource
    Surface energy of amorphous carbon films containing iron (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7814-7819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron containing diamond-like amorphous carbon (a-C:Fe) films were deposited by filtered cathodic vacuum arc technique. The influences of Fe content and substrate bias on the surface energy of the films were investigated. The surface energy of a-C:Fe films was determined by the contact angle measurement. Atomic force microscopy, Raman spectroscopy, and x-ray induced photoelectron spectroscopy were employed to analyze the origin of the variation of surface energy with various Fe content and substrate bias. It is found that the contact angle for water increases significantly after incorporating Fe into the films and the films become hydrophobic. The roughness of these films has no effect on the contact angle. The surface energy is reduced from 42.8 to 25 dyne/cm after incorporating Fe into the a-C film (10% Fe in the target), which is due to the reduction of both dispersive and polar component. The reduction in dispersive component is ascribed to the decrease of atomic density of the a-C:Fe films due to the increase in sp2 bonded carbon. When sp2 content increases to some extent, the atomic density remains constant and hence dispersive component does not change. The absorption of oxygen on the surface plays an important role in the reduction of the polar component for the a-C:Fe films. It is proposed that such network as (Cn–O–Fe)–O–(Fe–O–Cn) may be formed and responsible for the reduction of polar component. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375808
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced ballistic transport in InGaAs/InAlAs hot-electron transistors (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1254-1255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot-electron transistors fabricated using a 600-A(ring) InGaAs base and a 500-A(ring) InAlAs barrier have shown a peak ballistic common base current gain of 0.82 at 77 K despite the large injection energies. Reduction of injection energies by lowering the emitter and collector barriers should lead to an even higher ballistic transport ratio due to the reduced Γ-L scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98696
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of annealed p/n junctions between GaAs and Si (100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of GaAs( p)/Si(n) interface were determined from capacitance-voltage (C-V), current-voltage (I-V), and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs( p) epitaxial layes on GaAs(n) substrates. The comparison was made between the junctions as grown and after an anneal at 850 °C for 20 min in 10% forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98322
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  • 4
    Electronic Resource
    Electronic Resource
    Spin reorientation in Nd2(Fe0.9M0.1)14B (M=Co, Ni, Ru) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1990-1994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature magnetic measurements have been made on pseudoternary compounds Nd2(Fe0.9M0.1)14 B(M=Co, Ni, Ru) in order to study the effect of partial replacement of Fe by other transition metals on the spin reorientation phenomena. The spin reorientation temperature (Tsr) decreases from 136 K for ternary Nd2Fe14B to 128 K for 10% Co replacement, to 118 K for 10% Ni replacement, and to 92 K for 10% nonmagnetic Ru replacement. The extrapolated 0 K tilting angle of easy magnetization from the tetragonal c axis decreases from 30° of Nd2Fe14B to 20° for M=Co, 19° for M=Ni, and 18° for M=Ru.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337994
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  • 5
    Electronic Resource
    Electronic Resource
    On the grain-boundary phase in iron rare-earth boron magnets (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2993-2998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of structural and microanalytical studies on sintered iron rare-earth boron permanent magnets are presented in this paper. It is shown that the structure of the phase present at the two-grain boundaries is the same as that of the phase at the three-grain junctions; both are fcc with a lattice parameter of 5.24 A(ring). It is also shown that this fcc phase is stabilized by the presence of significant quantities of oxygen. The possible effects of thin foil preparation by ion milling techniques in producing the observed bcc phase are also briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337849
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  • 6
    Electronic Resource
    Electronic Resource
    Electron-stimulated decomposition of alkyl and fluoroalkyl ethers adsorbed on alumina (1987)
    s.l. : American Chemical Society
    Langmuir 3 (1987), S. 1161-1167 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00078a051
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  • 7
    Electronic Resource
    Electronic Resource
    Intermartensitic transformation and magnetic-field-induced strain in Ni52Mn24.5Ga23.5 single crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1148-1150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a complete thermoelastic intermartensitic transformation between modulated and unmodulated martensite in single-crystal Ni52Mn24.5Ga23.5. This intermartensitic transformation provides a much larger strain than that of the martensitic transformation. A giant switching-like strain of ±5.0% can be achieved by a small magnetic field of 0.2 T upon the intermartensitic transformation. In the modulated martensite, a large recoverable magnetic-field-induced strain of up to 1.2% has been obtained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396820
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy study of irradiation-induced amorphizaton of Gd2Ti2O7 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1989-1991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation-induced evolution of the microstructure of Gd2Ti2O7, an important pyrochlore phase in radioactive waste disposal ceramics and a potential solid electrolyte and oxygen gas sensor, has been characterized using transmission electron microscopy and x-ray photoelectron spectroscopy. Following the irradiation of a Gd2Ti2O7 single crystal with 1.5 MeV Xe+ ions at a fluence of 1.7×1014 Xe+/cm2, cross-sectional transmission electron microscopy revealed a 300-nm-thick amorphous layer at the specimen surface. X-ray photoelectron spectroscopy analysis of the Ti 2p and O 1s electron binding energy shifts of Gd2Ti2O7 before and after amorphization showed that the main results of ion-irradiation-induced disorder are a decrease in the coordination number of titanium and a transformation of the Gd–O bond. These features resemble those occurring in titanate glass formation, and they have implications for the chemical stability and electronic properties of pyrochlores subjected to displacive radiation damage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402647
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  • 9
    Electronic Resource
    Electronic Resource
    Polymeric micromechanical components with tunable stiffness (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1700-1702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a microstereolithographic technique that enables the manufacturing of polymeric components for microelectromechanical systems. Model microstructures were fabricated in the form of end-supported microbeams (10 μm in diameter), in order to characterize the mechanical properties of the produced structures at the micron scale. The flexural modulus of these microbeams was measured by atomic force microscopy, using cantilevers with attached metal spheres, and employed in a three-point bending geometry. Postfabrication treatment of the microstructures allows for the tailoring of their stiffness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400084
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  • 10
    Electronic Resource
    Electronic Resource
    MgB2 tunnel junctions and 19 K low-noise dc superconducting quantum interference devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3995-3997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal–superconductor (SNS) current–voltage characteristics. The SIS characteristics are in good agreement with the standard tunneling model for s-wave superconductors, and yield an energy gap of (2.02±0.08) meV. The SNS characteristics are in good agreement with the predictions of the resistively-shunted junction model. DC superconducting quantum interference devices made from two SNS junctions yield magnetic flux and field noise as low as 4 μΦ0 Hz−1/2 and 35 fT Hz−1/2 at 19 K; Φ0 is the flux quantum. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424465
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