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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2585-2592 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Total ionization and attachment cross sections have been measured in C3F8 at 330 K using an electron beam and a total ion collection technique, calibrated by similar measurements on N2O and Xe. Our total ionization cross section is similar in general shape to a previous measurement of this type, but with typically half the magnitude. The ionization threshold cannot be accurately derived from these measurements, due to severe upward curvature immediately above threshold. The positive-ion signal rises above the background at 13.0±0.1 eV, to be regarded as a lower limit to the true threshold. An overall ionization cross section with a threshold at 13.3 eV is recommended, based on threshold data from photoelectron spectroscopy and the present data between 14 and 80 eV. The room temperature total attachment cross section peaks at 2.8 eV with a value of 1.75×10−17 cm2. This is 14 times smaller than the only other measurement of this type we are aware of. There is much better agreement with two more recently reported values unfolded from swarm experiments. The temperature dependence of the predominant dissociative attachment process, involving F− production, was studied in a different apparatus using a mass filter and ion pulse counting. At 730 K the peak cross section has increased by ∼60% and the threshold is lower by 1.1 eV. This second type of measurement was used to study the predominant dissociative attachment process in C2H3Cl, involving Cl− production. At 290 K this has a threshold at 0.85 eV and a peak at 1.35 eV of 3.2×10−17 cm2, in good agreement with recent work elsewhere. At 850 K the cross section at the peak is 2.6 larger, and lower in energy by 0.33 eV, while at 0 eV it has reached 6×10−18 cm2. At higher temperatures effects ascribed to thermal dissociation of the C2H3Cl were observed. The implications of the present results regarding the use of these gases in diffuse discharge switches are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1777-1779 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1-nm-thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound-state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak-to-valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak-to-valley ratio, should allow oscillations up to about 1 THz.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1579-1581 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the superlattice modulation, microstructure, and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO [100] and SrTiO3 [100] substrates by dc diode sputtering. Films grown on MgO were found to be quite clean with the c axis perpendicular to the substrate. However, no in-plane orientational relationship to the substrate was found. Films grown on SrTiO3, on the other hand, showed very good epitaxy to the substrate despite the presence of second phases. Films grown on MgO also exhibited a longer coherence length of the superlattice modulation than those grown on SrTiO3 under identical conditions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1238-1240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new zone-melting-recrystallization (ZMR) configuration with enhanced radiative heating has been developed for preparing silicon-on-insulator (SOI) films. With this configuration, in which the sample is positioned above the movable heater with the SOI film facing downward, subboundary-free 0.5-μm-thick SOI films are obtained over a much wider range of experimental parameters than with the conventional ZMR configuration. The characterization of these films by defect etching, optical microscopy, and transmission electron microscopy shows that the principal defects are isolated threading dislocations with a density of ∼106 cm−2. It should be possible to improve the material quality still further by optimizing experimental conditions for the new configuration.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 310-312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion beam irradiation on the microstructure of epitaxial YBa2Cu3O7−δ thin films. The ion beam induced defects are found to cluster in small (〈100 A(ring)) disordered areas. The size and density of the disordered areas are found to increase with the ion fluence. The presence of these small disordered areas can lead to the reduction of phase coherence of the electron pair wave function. Ion beam irradiation is also found to reduce the orthorhombicity of the lattice structure. A new incommensurate superlattice phase due to ion beam induced defect ordering has also been observed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 766-768 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of maintaining the oxygen stoichiometry of the Y1Ba2Cu3Ox (the so-called 123) compound at the desired level of x=6.0±0.1 when fabricating superconducting wires using the powder-in-tube method is addressed. A solution to this problem appears to be incorporating an unstable oxide like Ag2O in the core material, such that it acts as an in situ oxygen donor during the final sintering or annealing stage. Moreover, the segregation of Ag at the grain boundaries of the 123 grains and at the porosities seems to be a possible reason for the considerable improvement of the critical current density Jc of these wires. The effect of processing parameters, like different sintering temperatures and addition of various percentages of either Ag or Ag2O, is presented. Finally, in order to test conservation of superconductive properties during handling, the wires were subjected to different degrees of bending, and the subsequent effect on superconducting transition temperature, Tc and Jc, is reported.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3610-3616 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent (EL) devices are constructed using multilayer organic thin films. The basic structure consists of a hole-transport layer and a luminescent layer. The hole-transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8-hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The EL quantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue-green to orange-red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron-hole recombination and emission zones can be confined to about 50 A(ring) near the hole-transport interface. In the undoped Alq, the EL emission zone is considerably larger due to exciton diffusion. The multilayer doped EL structure offers a simple means for the direct determination of exciton diffusion length.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2451-2456 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents results of organometallic vapor-phase-epitaxial growth of low dislocation density GaAs1−xPx on GaAs, utilizing a thin compositionally graded layer (2 μm) and a strained-layer superlattice (SLS) to reduce the dislocation density. The grown structure consists of three sections: (1) a 2-μm GaAs1−xPx graded layer with final phosphorus composition x1 on a GaAs substrate; (2) a GaAs1−yPy /GaAs1−y'Py' SLS; and (3) a 1-μm GaAs1−xPx top layer with x=0.4. Three types of grading layers were investigated: sublinear, hyperlinear, and linear. The linear grading is found to give the lowest dislocation density. However, the 2-μm-thick linearly graded region is definitely too thin to release all the misfit strain. The residual strain produces dislocations after the SLS has been grown, resulting in dislocation generation in the constant composition layer. A novel method has been developed to eliminate this problem. The phosphorus composition at the end of the grading, x1, is made intentionally larger than both the average composition of the SLS and the top layer to prevent residual strain relief during the growth of the top layer. Using this "overshoot grading'' method, the etch pit density in the top layer is reduced from 3×107/cm2 without the special structure to 6.5×105/cm2. The reduction of dislocation density by the SLS has been systematically studied with variation of the SLS parameters, including the thickness of each layer, the number of periods, and the composition change in the SLS. The results show that the SLS itself can reduce the dislocation density by about one order of magnitude. The combination of the SLS with overshoot grading yields the most effective elimination of dislocations. Using the optimum conditions, GaAs0.6P0.4 with good surface morphology, strong visible photoluminescence intensity, and a dislocation density of 6.5×105/cm2 has been obtained.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3351-3352 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A longitudinal, discharge-heated copper vapor laser with an internal diameter of 4.2 cm and a length of 150 cm has been constructed. At the charging voltage of 14.5 kV, buffer gas pressure of 20 Torr, pulse repetition rate of 6.5 kHz, and laser tube temperature of 1450 °C; the laser offers an average power of 25 W with excellent stability and requires a minimum amount of maintenance.
    Type of Medium: Electronic Resource
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