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  • 1
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
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  • 2
    Electronic Resource
    Electronic Resource
    Topographic effect of surface roughness on thin-film flow (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353866
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of step-graded separate confinement quantum well lasers with direct and indirect barriers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1964-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on step-graded separate confinement quantum well lasers with Al0.85Ga0.15As outer confining layers, AlxGa1−xAs barriers and a 50-A(ring) GaAs quantum well grown by metalorganic chemical vapor deposition. By varying xb from 0.15 to 0.60, we show that, given an adequate optical waveguide confinement factor and sufficient cavity length, the collection of electrons in thin quantum wells with either direct or indirect barriers can be highly efficient, transfer of electrons from indirect barriers to thin direct wells does not degrade laser performance, and electron confinement in the separate confinement region plays no role in the operation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347178
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  • 4
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
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  • 5
    Electronic Resource
    Electronic Resource
    Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353424
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  • 6
    Electronic Resource
    Electronic Resource
    Multi-shot evolution of laser-induced periodic structure on the surface of polycrystalline silicon-on-insulator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4208-4211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multi-shot evolution of laser-induced periodic structure was studied by the time-resolved optical diffraction and reflection from the surface of polycrystalline silicon-on-insulator during the accumulation of 20 ns ruby laser pulses. In contrast to the results previously reported for the bulk sample, it was observed that the channel of the periodic structure development changed during the multiple irradiations even with a fixed fluence. The observed change occurs because the energy absorption is enhanced by the presence of the periodic structure preformed by the preceding pulses, and the absorbed laser energy at the polycrystalline layer is insulated by the underlying SiO2 layer. A previously unappreciated dip structure was observed in the time-resolved diffraction and a possible explanation is suggested postulating the preferential energy deposition in the valleys of the periodic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350799
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6124-6127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of zinc blende-GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source. We postulate, based on optical emission spectroscopy studies of the remote plasma, that, in our study, nitrogen atoms are the species primarily responsible for efficient nitridation. The zinc blende nature of the GaN films was confirmed by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, and ex situ low-temperature photoluminescence analyses. Our zinc blende-GaN film growth rates (∼0.3 μm/h) are higher than those reported to date that involve the use of electron cyclotron resonance type reactive nitrogen sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355176
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  • 8
    Electronic Resource
    Electronic Resource
    A model of diamond growth in low pressure premixed flames (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5461-5466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recognizing the potential importance of diamond thin film growth from combustion environments, a computational investigation of diamond synthesis in low pressure premixed flames has been conducted. The model employed solves the two-dimensional continuity, momentum, global energy, and species conservation equations in stagnation point flow geometry, and accounts for gas phase and surface reaction kinetics. The heterogeneous mechanism employed to describe diamond growth assumes that the methyl radical is the primary growth precursor. The gas phase mechanism includes elementary reaction pathways which generate methyl radicals from acetylene and in addition, includes a mechanism for cyclization (the formation of benzene) via acetylene and ethylene precursors. In this way, the pathway towards soot formation, which is believed to be a consequence of the formation of fused polycyclic aromatics, is shown to be a possible explanation for an eventual decrease in diamond growth rates at increasing fuel to oxygen flow ratios. A competition between oxidative pyrolysis of post flame hydrocarbons and cyclization establishes a criterion for optimum growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351989
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  • 9
    Electronic Resource
    Electronic Resource
    Positron annihilation study of microvoids in centrifugally atomized 304 stainless steel (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2489-2495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron trapping in microvoids was studied by positron-lifetime and positron Doppler line-shape measurements of centrifugally atomized 304 stainless-steel powder, which was hot-isostatically-press consolidated. This material contained a concentration of several times 1023/m3 of 1.5-nm-diam microvoids. Positron annihilation was strongly influenced by the microvoids in that a very long lifetime component τ3 of about 600 ps resulted. The intensity of the τ3 component decreased with decreasing number density of 1.5 nm microvoids. The Doppler peak shape was found to be much more strongly influenced by microvoids than by any other defects such as precipitates or grain boundaries. In particular microvoids produced significant narrowing of the Doppler distribution shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354078
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  • 10
    Electronic Resource
    Electronic Resource
    Elastic constants of single-crystal transition-metal nitride films measured by line-focus acoustic microscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1805-1811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic constants of single-crystal NbN, VN, and TiN films were determined from surface acoustic wave (SAW) dispersion curves obtained by the use of an acoustic microscope with a line-focus beam. Measurements were carried out for single-crystal nitride films grown on the (001) plane of single-crystal cubic-symmetric MgO substrates. The phase velocities measured as functions of the angle of propagation display the expected anisotropy. Dispersion curves of SAWs propagating along the symmetry axes were obtained by measuring the wave velocities for various film thicknesses and frequencies. Using a modified simplex method, an inversion of the SAW dispersion data yielded the elastic constants of cubic symmetry, namely c11, c12, and c44. The Rayleigh surface wave velocities calculated from the determined elastic constants and known mass densities agree well with a result measured by Brillouin scattering spectroscopy reported elsewhere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351651
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