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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heavy-hole and light-hole excitons of a CdTe epilayer, pseudomorphically grown on an InSb epilayer by molecular beam epitaxy, are studied with a diamond anvil cell as a function of applied hydrostatic pressure via photoluminescence (PL) and photomodulated reflectivity (PR) spectroscopies. They are compared with the excitonic features in the simultaneously measured PL spectra of a sample of bulk CdTe. Under applied pressure, the lattice mismatch-induced splitting between the light-hole and heavy-hole related transitions increases in a continuous and reversible manner because of the additional pressure-induced compression due to the difference in the compressibilities of CdTe and InSb. The unusually large strain sustained by the CdTe epilayer under pressure is discussed in the light of various models. The PR signal vanishes after the InSb epilayer goes through a structural phase transition at approximately 20 kbar, while the PL signal persists until it is irreversibly quenched by the CdTe epilayer undergoing a structural phase transition at approximately 30 kbar. For pressures between 20 and 30 kbar, the behavior of the CdTe epilayer is similar to that of the bulk sample; the strain appears to have been relaxed due to the structural phase transition which has taken place in InSb. Values of the first- and second-order pressure coefficients for bulk CdTe and for the CdTe epilayer as well as values of the hydrostatic and shear deformation potentials are obtained at 14 and 80 K and compared with previously quoted values.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2719-2722 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The volume dependence of the x-ray Debye temperature in aluminum at high pressure up to 6 GPa was measured with high-energy synchrotron radiation at the National Laboratory for High Energy Physics. High-pressure high-temperature diffraction experiments were carried out by use of a multianvil press system with the energy-dispersive diffraction method. The Debye temperature was determined from the integrated intensity ratio at different temperatures. In order to avoid the intrinsic anharmonic effects and the influence of the energy shift for the Bragg diffraction due to the thermal expansion, constant volume was maintained in a sample by controlling the pressure at elevated temperatures. The interpolated values of the Debye temperature and the Grüneisen parameter of the atmospheric volume were θD0 =367 K and γ0 =3.0, respectively. Excellent agreement was found upon comparison with the published results of conventional experiments.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 334-338 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pd multilayered films exhibit large perpendicular magnetic anisotropy and have attracted attention as new materials for recording media and for other applications. The coercivity (Hc), however, is small in as-sputtered films. We have found that Hc increased markedly with the atmospheric annealing at 300 °C to 2 kOe, and studied the change in film structure and reason of the increase in Hc with the annealing. The rf magnetron sputtering method was employed in fabricating the films. Film structure changes were observed by x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, energy dispersive x-ray spectrography, and atomic force microscopy. The increase in Hc was observed only in the atmospheric annealing, and not in the vacuum-annealing. The internal structure of films after the atmospheric annealing at 300 °C consisted of columnar parts that had the multilayered structure that undertook vertical magnetization and column boundaries being surrounded by Co oxides. As a consequence, domain wall binding occurs in the segregated areas of the oxides in the column boundaries, thereby increasing Hc.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2532-2534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparative photoluminescence and excitation spectra of ZnSe/GaAs epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE) show likewise features in the exciton energy regime. Two strain-split components of the free exciton are observed, as well as characteristic sets of transitions from or into ground and excited states of acceptor- and donor-bound excitons. However, all respective lines are shifted to lower energies in the HWE samples, due to the increased thermally induced strain as a consequence of the substrate temperatures being enhanced compared to the MBE growth. Whereas the dominant donors are of the same nature in both kinds of samples, specific acceptor centers are incorporated in the HWE films. Although the MBE-grown layers are of superior quality, it is shown that HWE under optimized growth conditions is a cheap and useful alternative to obtain ZnSe epilayers of reliable properties.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1979-1983 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This study reports the construction and working of a sintered diamond anvil high-pressure cell for performing electrical resistance measurements using a four-probe method at cryogenic temperatures. The apparatus has been designed to minimize the pressure shift during the cooling cycle from room temperature to 1.2 K. Pressure is calibrated using the pressure dependence of the superconducting transition temperature (Tc) of Bi to 50 GPa. The usefulness of the apparatus is demonstrated by electrical resistance and Tc measurements on Se and Zr up to 60 GPa.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 449-451 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1272-1274 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ZnSe/epitaxial GaAs interfaces have been formed by molecular beam expitaxy and evaluated by several techniques including capacitance-voltage measurements. In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed short-wavelength holographic laser lithography and reactive ion etching to define wire and dot-like patterns in ZnSe thin epitaxial films and heterostructures with spatial feature size to better than 100 nm. Photoluminescence measurements suggest that surface damage from etching may be much less severe than in III-V semiconductors.〈hedend〉
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1562-1564 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of air annealing on magnetic properties and structures of multilayered Co/Pt and Co/Pd sputtering films were studied. The dual-source rf magnetron sputtering method was employed in fabricating the films. The thicknesses of the Co layer and Pt layer of the Co/Pt films were 4.3 and 10.0 A(ring), respectively: the total thickness was 4300 A(ring). The thicknesses of Co layer and Pd layer of the Co/Pd films were 3.6 and 11.8 A(ring), respectively: the total thickness was 5600 A(ring). Residual magnetizations and coercivities of the Co/Pt and Co/Pd films increased with air-annealing at 250–350 °C for 30 min to 2.5–3 kG and 2–3 kOe, respectively. The increases were observed only during air annealing, but not in vacuum annealing. Saturated magnetizations and intensities of the superlattice x-ray peak decreased uniformly relative to annealing temperature.
    Type of Medium: Electronic Resource
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