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  • 1990-1994  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1269-1272 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growthrate and high crystalline quality are targeted for AlN films grown on (0001) α-Al2O3 and (0001) 4Hor 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH3 andaluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Bothinfluences of temperature and carrier gas on microstructure, crystalline state and growth rate arepresented. Growth rates higher than 190 μm.h-1 have been reached. Thermodynamic calculationswere carried out to understand the chemistry of AlN deposition. AlN layers were characterized bySEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced frompole figures obtained by X-Ray diffraction on a texture goniometer
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 25 (1990), S. 3765-3772 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The characteristics of the Al/SiC interface play a critical role in controlling the properties of SiC-reinforced aluminium composites and aluminium-brazed SiC ceramic joints. Recently, a detailed investigation on the wettability of SiC single crystals by aluminium and several of its alloys was conducted. In order to understand further the nature of the Al/SiC interface, high resolution and conventional transmission electron microscope techniques have now been used to investigate its microchemistry and microstructure. The results revealed the coexistence of two polytype structures, rhombohedral and hexagonal, in the SiC single crystal structure. Aluminium carbide (Al4C3) and silicon were the reaction products found at the Al/SiC interface. From diffraction patterns, epitaxial orientation relationships between the SiC substrate and Al4C3, Si were determined.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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