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  • 1995-1999
  • 1990-1994  (5)
  • 1990  (5)
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  • 1995-1999
  • 1990-1994  (5)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1916-1918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs diode lasers exhibiting continuous (cw) operation at room temperature have been grown on a Si substrate by organometallic vapor-phase epitaxy, without the use of molecular-beam epitaxy. To improve the quality of the laser structure, a defect-filtering layer was incorporated between this structure and a GaAs buffer layer about 1.5 μm thick grown on the substrate. Of four types of defect-filtering layers investigated, the most effective was one grown with thermal cycling, which made it possible to obtain pulsed threshold current densities as low as 350 A/cm2 for broad-stripe lasers with a cavity length of 500 μm. Ridge-waveguide lasers with this type of defect-filtering layer have exhibited cw threshold currents as low as 25 mA and a differential quantum efficiency of 55%.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 321-323 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length L of 1500 μm. Differential quantum efficiencies as high as 90% have been obtained for L=300 μm. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L=1000 μm.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1292-1294 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diode lasers emitting at 2.29 μm have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 μm.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 212-214 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-photon absorption (TPA) coefficient has been measured for a single-mode GaAs/AlGaAs quantum well laser at 0.86 μm, near the lasing wavelength of 0.83 μm. Picosecond laser pulses were employed to resolve the ultrafast TPA from long-lived carrier-dependent effects. The TPA coefficient was found to be 31±6 cm GW−1, which corresponds to a value of (5.7±1.2)×10−11 esu for the imaginary part of the third-order nonlinear susceptibility. At wavelengths near the quantum well exciton, no strong resonance enhancement of the two-photon transition was observed, and the coefficient appears to be characteristic of the AlGaAs cladding layers.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 0006-3525
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The oscillatory and steady shear rheological properties of concentrated solutions of proteoglycan subunit (PGS) and aggregate (PGA) from bovine articular cartilage have been studied using a Rheometrics fluids spectrometer. At comparable concentrations in the physiological range tan δ increases from 0.5 to 1.0 for PGA as the oscillation frequency (ω) increases from 10-1 to 102 rads / s, compared to a decrease from 40 to 5 for PGS. Thus PGA solutions exhibit predominantly elastic response whereas those of PGS exhibit primarily viscous behavior. PGA solutions show pronounced shear-thinning behavior at all shear rates (γ) in the range 10-2 〈 γ (s-1) 〈 10 2, whereas PGS solutions exhibit predominantly Newtonian flow. For PGA, the small-strain complex viscosity η* (ω) is substantially smaller than the steady-flow viscosity η (γ) at comparable values of ω and γ. These observations indicate that the presence of proteoglycan aggregates leads to formation of a transient or weak-gel network. Since aggregation leads to a large increase in molecular hydrodynamic volume and hence in the relaxation times for macromolecular rotation, it appears that role of aggregate formation is to shift the linear viscoelastic response from the terminal viscous flow into the plateau elastomeric regime of relaxational behavior. Normal or pathological changes that produce a decrease in aggregation will result in a loss of elastomeric behavior of the proteoglycan matrix.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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