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  • 1
    Electronic Resource
    Electronic Resource
    High-intensity laser beam attenuation based on two-step absorption mechanism (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4281-4287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Due to rapid progress in the development of high-power tunable visible lasers, it is expected that eye protection from tunable lasers in the open field will be needed in the near future. A nonlinear method is proposed that will transmit low-intensity light, but absorb light at high intensities. This high-intensity attenuator is based on the use of a liquid or solid made up of molecules having the property of undergoing two-photon photodissociation through most of the visible part of the spectrum. This material must also have the additional property that one of the products of the photodissociation is a one-photon absorber throughout the same wavelength region. It is suggested that the laser beam intensity can be attenuated by a large factor through these two-step absorption mechanisms, and that if the one-photon absorbing product is quenched by collisions with some component of the liquid in a time that is small compared with the laser pulse length, very large attenuation can be achieved from the built-up concentration of one-photon absorbers. Thus, the early part of a laser pulse is attenuated by two-photon absorption only, but the later parts of the pulse can be attenuated by factors as large as 105. Using a double-pass geometry, the leading edge of the pulse can be absorbed by linearly absorbing species formed on the first pass. The double-pass method, with an optical delay line, can even work well with picosecond pulses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352189
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of gettering in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5858-5864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two basic functions of getters in silicon during gettering processes are investigated in detail. The sink action of getters for absorbing impurities is described by a gettering parameter g, which relates to the diffusion ratio gd, segregation coefficient S, and the activation energies Em,Si, Em,G of impurities in intrinsic Si and in the getter phase. The kickout mechanism is suggested for describing the diffusion of impurities because of the contribution of Si interstitials to kick out the impurities to be gettered. Based on the interaction of Si interstitials with impurities and the influence of the sink in absorbing impurities, a set of gettering equations is derived and used to calculate the gettering of gold in silicon with back surface getters. Theoretical results agree well with reported experimental data and five conclusions are provided to determine the optimal gettering conditions for a given gettering cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350482
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  • 3
    Electronic Resource
    Electronic Resource
    Raytracing, chopper, and guideline for double-headed Dragon monochromators (invited) : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1229-1233 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The raytracing of the double-headed Dragon, a recently proposed monochromator for producing two simultaneous left and right circularly polarized soft x-ray beams, is presented. The energy resolution and wavelength of these two beams are confirmed to be identical, and the high performance of the original Dragon is found to be preserved in the double-headed configuration. A compact ultra-high vacuum compatible chopper for rapid alternation between left and right helicities is presented, and a guideline for collecting circularly polarized light from bending magnet sources is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143089
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  • 4
    Electronic Resource
    Electronic Resource
    Cryostat to provide a solid deuterium layer in a plastic shell for the Gekko XII glass laser system (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3378-3383 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system to provide a liquid or solid deuterium shell target with a plastic ablator for laser implosion experiments was developed. The system is capable of filling a plastic capsule with deuterium gas of 11 MPa at room temperature at the firing position in the target chamber. Then, the target is cooled down to a cryogenic temperature to form a uniform liquid or solid fuel layer inside without exposing it to the atmosphere. Details of the system, tensile strength of polystyrene shells at low temperature, and the residual vapor pressure in the central void of the target at the laser irradiation are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142555
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  • 5
    Electronic Resource
    Electronic Resource
    Tertiarybutyldimethylantimony: A new Sb source for low-temperature organometallic vapor phase epitaxial growth of InSb (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 204-206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: III-V semiconductors such as InAsSb, InSbBi, and InAsSbBi are useful materials for far-infrared applications. Their growth usually requires low temperatures. The standard Sb source, trimethylantimony (TMSb), decomposes very slowly at low temperatures. In this work, a new Sb source, tertiarybutyldimethylantimony (TBDMSb), is investigated for OMVPE growth of InSb. Good surface morphology InSb layers were obtained for growth temperatures from 450 to as low as 325 °C. The growth temperature can be lowered by more than 100 °C when TBDMSb replaces TMSb. The growth efficiency of InSb using trimethylindium (TMIn) and TBDMSb is on the order of 1×104 μm/mole. The high values of growth efficiency indicate that there is neglectible parasitic reaction between TMIn and TBDMSb. The results indicate that TBDMSb is an excellent replacement for TMSb and TIPSb in the growth of Sb-containing alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108487
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  • 6
    Electronic Resource
    Electronic Resource
    Dominant pinning mechanisms in YBa2Cu3O7−x films on single and polycrystalline yttria stabilized zirconia substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1902-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical-current densities have been measured in YBa2Cu3O7−x films deposited on (100) yttria stabilized zirconia (YSZ) and polycrystalline YSZ substrates as a function of temperature (4.5–88 K), magnetic field (0–1 T) and orientation relative to the applied field. The results indicate that in films on polycrystalline substrates, surface and interface pinning play a dominant role at high temperatures. In films on (100) YSZ, pinning is mainly due to intrinsic layer pinning as well as extrinsic pinning associated with the interaction of the fluxoids with point defects and low energy planar (2D) boundaries. The differences are attributed to the intrinsic rigidity of single fluxoids which is reduced in films on polycrystalline substrates thereby weakening the intrinsic layer pinning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107148
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  • 7
    Electronic Resource
    Electronic Resource
    Single domain high Tc La2−xSrxCuO4 films with tilted CuO2 planes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off-axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c-axis direction determined by the sense of the miscut. Misoriented antidomains (103)' have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)' domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107149
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  • 8
    Electronic Resource
    Electronic Resource
    Low-frequency noise in InP-based NnPnN double heterojunction bipolar transistors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter deals with the low-frequency noise in an InGaAs(P)/InP double heterojunction bipolar transistor at room temperature. The recombination is mainly responsible for the noise. The current dependence of the base noise with floating collector was of the form IB3 and the shot noise of base current corresponding to 3.2×10−24 A2/Hz for f=10 Hz. The current dependence of the collector noise with high frequency short circuited was of the form Ic1.55 and the shot noise of collector current corresponding to 3.2×10−24 A2/Hz for f=10 Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107501
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  • 9
    Electronic Resource
    Electronic Resource
    Electromechanical deflections of piezoelectric tubes with quartered electrodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 132-134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deflection of a piezoelectric tube, with the outer (or inner) metal coating sectioned into four quadrants, is analyzed. We show that by applying a voltage V on one of the quadrants, the electromechanical deflection is ((square root of)2d31VL2/πDh), where d31 is the piezoelectric coefficient, L is the length, D the diameter, and h the wall thickness of the tube. The deflections calculated with it agree well with the results of finite-element calculations and direct experimental measurements. The formula can be used in the design and application of tube scanners in scanning tunneling microscopes and scanning force microscopes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107348
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing and the anomalous threshold voltage shift of metal-oxide-semiconductor structure in n+ polycrystalline silicon gate complementary metal-oxide-semiconductor technology (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 447-449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anomalous different threshold voltage shift between P-channel metal-oxide-semiconductor field effect transistor (P-MOSFET) and N-channel MOSFET under high temperature rapid thermal annealing (RTA) borophosphosilicate glass reflow has been studied using 1 μm n+ polygate complementary MOS technology. The boron transient enhanced outdiffusion and phosphorus pileup at channel surface, as well as the interface states generated due to the degradation of thin gate oxide under high RTA process, are proposed as the main sources of this anomalous shift. A detailed model is proposed to interpret the mechanism and some methods to solve the anomalous shift are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107910
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