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  • 1990-1994  (3)
  • 1985-1989
  • 1993  (3)
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  • 1990-1994  (3)
  • 1985-1989
Year
  • 1
    Electronic Resource
    Electronic Resource
    SiO2 mask erosion and sidewall composition during CH4/H2 reactive ion etching of InGaAsP/InP (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 mask erosion has been studied during CH4/H2 reactive ion etching of InGaAsP/InP double heterostructures. The amount of mesa mask narrowing at a pressure of 100 mT, normalized for an etch depth of 3.5 μm, is approximately 0.4–0.6 μm and decreases slightly with increasing self-bias voltage. It is not strongly dependent on the sidewall angle of the mask or CH4 concentration. Mask residue deposits on the etched sidewall under conditions of relatively high CH4 concentration and low power density. Auger electron spectroscopic analysis of the sidewall shows that the deposit contains a significant amount of elemental Si, which suggests a mechanism for mask erosion in which SiO2 is reduced to Si in the hydrogen/hydrocarbon-rich environment of the plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110213
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Planar regrowth of InP and InGaAs around reactive ion etched mesas using atmospheric pressure metalorganic vapor phase epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 234-236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth patterns around etched mesas were observed during the atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) of InP layers with and without addition of trichloroethane (TCA) and InGaAs layers. It was observed that the addition of TCA during the MOVPE of InP induced rapid growth along high-index directions such as [113] as well as much more enhanced faceting along (001) and (111)p planes, resulting in a planar regrowth around reactive ion etched mesas parallel to [110] directions. No irregularity or interruption of growth was observed, providing an ideal sequence for the blocking layer regrowth used in laser fabrication. Regrowth of InGaAs layers also resulted in a planar regrowth around the mesas along [110] directions but through a somewhat different mechanism. Growth on (111) planes was completely suppressed in this case and the facets were less clearly defined, so that growth from the base plane proceeded without interacting with the sidewalls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110351
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A quantitative evaluation of microstructure in Si3N4/SiC platelet and participate composites (1993)
    Springer
    Journal of materials science 28 (1993), S. 4787-4798 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A microstructural evaluation of Si3N4 containing 15–40 vol% SiC platelets or particles is presented. All the composites were fully densified by hot isostatic pressing without external addition of sintering aids. Size, morphology, surface roughness and crystal structures of the SiC phases before and after sintering were compared in order to discuss the structural stability of the reinforcements up to 2050 °C in Si3N4 matrix. Morphology and phase characteristics of the grain boundary are also discussed. In addition, homogeneity and isotropy of the composite bodies were quantitatively examined by image analysis techniques and it was recognized that, for a similar degree of dispersion, the characteristic of three-dimensional randomness could be preserved only at V f〈30% in the composites containing high aspect ratio platelets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00414273
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    Paper (German National Licenses)
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