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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 26 (1970), S. 1156-1156 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Résumé On décrit une population diploide dePoa annua L. d'Australie. Elle se montre différente des «mphihaploides» qui ont été trouvées en Californie. La signification de cette population en rapport avec l'origine supposée deP. annua est considerée.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of molecular evolution 41 (1995), S. 909-919 
    ISSN: 1432-1432
    Keywords: Hemoglobins ; Chironomus ; Kiefferulus ; Gene clusters ; Molecular evolution
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A genomic clone containing hemoglobin genes was isolated from a species of the chironomid genus Kiefferulus. Eight genes, including an apparent pseudogene, were sequenced and the amino acid sequences of the putative proteins were determined. By comparison to the previously described hemoglobins in the sister-genus Chironomus, they were identified as members of the dimeric Hb VIIB group. The results indicate that the existence of clusters of hemoglobin genes may be a common feature in chironomids and not just confined to Chironomus. The Kiefferulus genes show greatest similarity of amino acid sequence to Hb VIIB-7 from the Chironomus cluster. The results suggest that the ancestral cluster contained at least two gene types, one of which gave rise to VIIB-7 and the Kiefferulus genes while the other gave rise to the other Chironomus VIIB genes. Both clusters appear to have increased in size by duplication or unequal crossing over since the separation of the genera. It also appears that an unrelated gene present in the Chironomus cluster, Hb-Y, arose from a completely independent origin with no apparent equivalent gene anywhere in the genome of Kiefferulus or some other Chironomus species.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0886
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Sex determination in a group of phylogenetically related Chironomus species, of the pseudothummi complex, from south-eastern Australia and New Zealand is male heterogametic, controlled by a male determiner. The male determiner has been located at least to the level of the chromosome arm in most members of this phylogenetic group. It varies in location among many of the species and there are some phylogenetic patterns discernable, which are discussed in relation to the possible origin of the sex determiner. There is a group of species, Ch. oppositus ff. oppositus and whitei, Ch. australis, Ch. alternans a and Ch. alternans c, which appear to be central to this phylogeny, in which the sex determiner is located near the centromere of the CD chromosome, the most common location in the Australasian group. This is different from the most common location, arm F, of the thummi complex in Europe and North America. There is also a group, comprising Ch. oppositus f. tyleri, Ch. cloacalis, Ch. alternans b and Ch. nepeanensis, in which the sex determiner is on arm G. The arm A sex determiners, found in Ch. tepperi, Ch. oppositus ff. whitei and connori, and Ch. occidentalis, may be of common origin or they may be independently derived, as must be the arm B (Ch. duplex) and arm F (Ch. oppositus f. whitei) sex determiners. In Ch. oppositus f. whitei, four different chromosomal locations for the sex determiner have been identified. It is not yet clear whether these represent an unstable polymorphism or indicate the existence of cryptic subgroupings within this form. Although the location of the sex determiners can be assigned to particular chromosome arms, the precise location cannot be determined, therefore the assumption of common origin may not always be correct. Also, this uncertainty means that it is impossible at present to differentiate between a complex system of sex determination and the possibility of a translocatable sex determiner as explanations of the variability in sex determiner location. The forms of Ch. oppositus are redefined and renamed to avoid confusion caused by the previous names.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 183 (1959), S. 698-699 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The strains used were 232-1, 232-2, 232-3 and 232-4, all of which are albino (al-2), large-spored strains comprising a 4-spored ascus obtained from the sixteenth generation of selection for increased ascospore size2. These strains were crossed to the appropriate wild type and the crosses incubated ...
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 114-118 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocation loops and precipitates in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy to investigate their formation mechanism and establish their relationship to point defects. The precipitates are identified to be hexagonal arsenic phases having a simple orientation relationship with the GaAs matrix. Detailed analyses of the loops indicate that they are composed of two separate defects lying on (111) planes: a faulted loop and a perfect loop. It is proposed that the loops are formed by condensation of excess arsenic interstitials followed by clustering of excess Ga vacancies and subsequent generation and movement of Shockley partial dislocation(s). The faulted loop is interpreted as an hcp arrangement of arsenic atoms. This model supports the hypothesis that arsenic interstitials and Ga vacancies coexist in GaAs at high temperatures although arsenic interstitials initiate the formation of arsenic-related dislocation loops. Implications concerning the formation process of the EL2 deep-level defect are also discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 566-568 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling potential barriers to compensate for disorder due to size fluctuation in quantum dots. The Coulomb-blockade phenomena observed in linear and nonlinear transport regimes were found to be enhanced by the multidot coupling. The Coulomb staircase (nonlinear effect) appears more clearly with the increasing number of coupled dots, indicating definite suppression of the inevitable cotunneling process. In the linear regime, the frequency of Coulomb oscillation was able to be tuned by changing the interdot coupling strength. These results indicate that enhancement of the Coulomb blockade and tunability can be achieved through replacing the traditional single dot by gate-controlled multidots in future single-electron devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 234-236 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth patterns around etched mesas were observed during the atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) of InP layers with and without addition of trichloroethane (TCA) and InGaAs layers. It was observed that the addition of TCA during the MOVPE of InP induced rapid growth along high-index directions such as [113] as well as much more enhanced faceting along (001) and (111)p planes, resulting in a planar regrowth around reactive ion etched mesas parallel to [110] directions. No irregularity or interruption of growth was observed, providing an ideal sequence for the blocking layer regrowth used in laser fabrication. Regrowth of InGaAs layers also resulted in a planar regrowth around the mesas along [110] directions but through a somewhat different mechanism. Growth on (111) planes was completely suppressed in this case and the facets were less clearly defined, so that growth from the base plane proceeded without interacting with the sidewalls.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3170-3172 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 mask erosion has been studied during CH4/H2 reactive ion etching of InGaAsP/InP double heterostructures. The amount of mesa mask narrowing at a pressure of 100 mT, normalized for an etch depth of 3.5 μm, is approximately 0.4–0.6 μm and decreases slightly with increasing self-bias voltage. It is not strongly dependent on the sidewall angle of the mask or CH4 concentration. Mask residue deposits on the etched sidewall under conditions of relatively high CH4 concentration and low power density. Auger electron spectroscopic analysis of the sidewall shows that the deposit contains a significant amount of elemental Si, which suggests a mechanism for mask erosion in which SiO2 is reduced to Si in the hydrogen/hydrocarbon-rich environment of the plasma.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 448-450 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8-μm-thick GaAs film. Cross-sectional transmission electron micrographs and reflection high-energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 140 (1994), S. 1-8 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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