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  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 448-450 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8-μm-thick GaAs film. Cross-sectional transmission electron micrographs and reflection high-energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 114-118 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Dislocation loops and precipitates in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy to investigate their formation mechanism and establish their relationship to point defects. The precipitates are identified to be hexagonal arsenic phases having a simple orientation relationship with the GaAs matrix. Detailed analyses of the loops indicate that they are composed of two separate defects lying on (111) planes: a faulted loop and a perfect loop. It is proposed that the loops are formed by condensation of excess arsenic interstitials followed by clustering of excess Ga vacancies and subsequent generation and movement of Shockley partial dislocation(s). The faulted loop is interpreted as an hcp arrangement of arsenic atoms. This model supports the hypothesis that arsenic interstitials and Ga vacancies coexist in GaAs at high temperatures although arsenic interstitials initiate the formation of arsenic-related dislocation loops. Implications concerning the formation process of the EL2 deep-level defect are also discussed.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3170-3172 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: SiO2 mask erosion has been studied during CH4/H2 reactive ion etching of InGaAsP/InP double heterostructures. The amount of mesa mask narrowing at a pressure of 100 mT, normalized for an etch depth of 3.5 μm, is approximately 0.4–0.6 μm and decreases slightly with increasing self-bias voltage. It is not strongly dependent on the sidewall angle of the mask or CH4 concentration. Mask residue deposits on the etched sidewall under conditions of relatively high CH4 concentration and low power density. Auger electron spectroscopic analysis of the sidewall shows that the deposit contains a significant amount of elemental Si, which suggests a mechanism for mask erosion in which SiO2 is reduced to Si in the hydrogen/hydrocarbon-rich environment of the plasma.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 234-236 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth patterns around etched mesas were observed during the atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) of InP layers with and without addition of trichloroethane (TCA) and InGaAs layers. It was observed that the addition of TCA during the MOVPE of InP induced rapid growth along high-index directions such as [113] as well as much more enhanced faceting along (001) and (111)p planes, resulting in a planar regrowth around reactive ion etched mesas parallel to [110] directions. No irregularity or interruption of growth was observed, providing an ideal sequence for the blocking layer regrowth used in laser fabrication. Regrowth of InGaAs layers also resulted in a planar regrowth around the mesas along [110] directions but through a somewhat different mechanism. Growth on (111) planes was completely suppressed in this case and the facets were less clearly defined, so that growth from the base plane proceeded without interacting with the sidewalls.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 566-568 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling potential barriers to compensate for disorder due to size fluctuation in quantum dots. The Coulomb-blockade phenomena observed in linear and nonlinear transport regimes were found to be enhanced by the multidot coupling. The Coulomb staircase (nonlinear effect) appears more clearly with the increasing number of coupled dots, indicating definite suppression of the inevitable cotunneling process. In the linear regime, the frequency of Coulomb oscillation was able to be tuned by changing the interdot coupling strength. These results indicate that enhancement of the Coulomb blockade and tunability can be achieved through replacing the traditional single dot by gate-controlled multidots in future single-electron devices. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Amsterdam : Elsevier
    Journal of Crystal Growth 140 (1994), S. 1-8 
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Amsterdam : Elsevier
    Journal of Crystal Growth 130 (1993), S. 287-294 
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Amsterdam : Elsevier
    Journal of Crystal Growth 96 (1989), S. 333-338 
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Cellular and molecular life sciences 26 (1970), S. 1156-1156 
    ISSN: 1420-9071
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Résumé On décrit une population diploide dePoa annua L. d'Australie. Elle se montre différente des «mphihaploides» qui ont été trouvées en Californie. La signification de cette population en rapport avec l'origine supposée deP. annua est considerée.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Journal of molecular evolution 41 (1995), S. 909-919 
    ISSN: 1432-1432
    Schlagwort(e): Hemoglobins ; Chironomus ; Kiefferulus ; Gene clusters ; Molecular evolution
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Abstract A genomic clone containing hemoglobin genes was isolated from a species of the chironomid genus Kiefferulus. Eight genes, including an apparent pseudogene, were sequenced and the amino acid sequences of the putative proteins were determined. By comparison to the previously described hemoglobins in the sister-genus Chironomus, they were identified as members of the dimeric Hb VIIB group. The results indicate that the existence of clusters of hemoglobin genes may be a common feature in chironomids and not just confined to Chironomus. The Kiefferulus genes show greatest similarity of amino acid sequence to Hb VIIB-7 from the Chironomus cluster. The results suggest that the ancestral cluster contained at least two gene types, one of which gave rise to VIIB-7 and the Kiefferulus genes while the other gave rise to the other Chironomus VIIB genes. Both clusters appear to have increased in size by duplication or unequal crossing over since the separation of the genera. It also appears that an unrelated gene present in the Chironomus cluster, Hb-Y, arose from a completely independent origin with no apparent equivalent gene anywhere in the genome of Kiefferulus or some other Chironomus species.
    Materialart: Digitale Medien
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