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  • 1
    Electronic Resource
    Electronic Resource
    Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2355-2357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317540
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-gate-controlled single-electron transistor with coupled dot geometry has been fabricated on a silicon-on-insulator structure. Coupled dots are defined by tunable gates which are designed to separately control the tunneling potential barriers to compensate for disorder due to size fluctuation in quantum dots. The Coulomb-blockade phenomena observed in linear and nonlinear transport regimes were found to be enhanced by the multidot coupling. The Coulomb staircase (nonlinear effect) appears more clearly with the increasing number of coupled dots, indicating definite suppression of the inevitable cotunneling process. In the linear regime, the frequency of Coulomb oscillation was able to be tuned by changing the interdot coupling strength. These results indicate that enhancement of the Coulomb blockade and tunability can be achieved through replacing the traditional single dot by gate-controlled multidots in future single-electron devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124443
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    Paper (German National Licenses)
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