ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1317540
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