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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1542-1544 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak-to-valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double-quantum well system embedded in a pn junction structure grown on InP.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a giant magnetothermopower (GMT), giant magnetoresistance (GMR), and on magnetization measurements in Co/Cu[111] superlattices grown by molecular beam epitaxy. The maximum value of the GMT (at room temperature) was 14% for a Cu thickness of 9 A(ring) and the maximum GMR (at 4.2 K) was −26% at 7 A(ring) of Cu. Oscillations in the remnant magnetization and the saturation field as a function of Cu thickness with a period of about 10 A(ring) were observed. However, there were no oscillations in the GMT or the GMR. The maximum values of both the GMT and GMR are associated with saturation fields in excess of 40 kOe and with small remnant magnetizations. These results are consistent with the presence of antiferromagnetic coupling.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2921-2933 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structures of n-i-n-i doping superlattices are found using a self-consistent calculation based on the envelope function formalism. The modulation potentials, the charge density distributions, the dispersion relationships, and the occupation of the subbands in the n-i-n-i superlattices are computed and their dependence on temperature and the structural parameters of the superlattices are studied. It is found that the modulation potentials of n-i-n-i doping superlattices are weak, and quantum effects are, therefore, also weak. The density of states in n-i-n-i superlattices can be adjusted by varying the structural parameters of the superlattices. As a result, the n-i-n-i doping superlattices behave like uniformly doped semiconductors with an adjustable density of states. The density of states is found to be temperature dependent. Electron mobilities of the n-i-n-i doping superlattices are also computed. It is found that both impurity scattering processes that are observed in uniform lightly doped semiconductor and heavily doped semiconductor can coexist in the n-i-n-i doping superlattices.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4579-4585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of coupling between quantum wells on the optical gain has been examined here. Although the results of the calculations mostly agree with previous qualitative expectations of gain suppression with coupling, there are some important exceptions. It is shown that the dependence of peak gain or threshold current density is not a monotonic function of the barrier thickness, and more importantly there are barrier thicknesses (beyond the almost opaque barrier case) for which optical gain can be enhanced and threshold current density reduced as compared to the values for an uncoupled structure. Results and discussion for the gain peak and threshold current density of a GaAs/Al0.3Ga0.7As double quantum well system are presented as a specific example
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 718-719 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on persistent field in a quasipermanent magnet made of high temperature superconductor. The material has an average of 40% molar excess of Y, relative to Y1Ba2Cu3O7 and has been irradiated with high energy light ions at 200 MeV. The magnet, which traps 1.52 T at 77.3 K, traps nearly 4 T at 64.5 K. No evidence of giant flux jump or sample cracking was observed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6533-6535 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Advances on permanent high-Tc superconducting magnets are reported. Materials are tested in the form of small tiles. An accurate phenomenological model of the currents in a magnetized tile predicts that the maximum trapped field BT,max∝Jcf(d), where Jc is the critical current density, d is the diameter of the single-grain tile, and f(d) is a function which increases monotonically with d. Results are reported of increasing Jc via chemical additives, and via bombardment by high-energy light ions and fission fragments. Increases in d via chemical and temperature gradients are also reported. Methods, data, and most recent results are presented. Present values are d=2 cm, and Jc=85 kA/cm2, at 77 K. A six tile minimagnet, 1.2×1.2×1.5 cm3, fabricated from earlier tiles with d∼1 cm, Jc∼45 kA/cm2, retains 1.52 T at 77 K. It is calculated that the more recent values of Jc and d will result in fields of 3 T at 77 K. BT,max also increases rapidly with T−1, and approximately doubles at 60 K.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1411-1413 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of a realistic three-dimensional periodic random superlattice (SL) [(GaAs)m/(AlAs)n]l are calculated for the first time using the large-cluster recursion method within the tight-binding framework. It is found that the localized valance band-tail states of the random SL, which are almost independent of the AlAs concentration, extend to the band-gap region of the corresponding ordered SL. The central peaks in the Al s and Ga s states which vary with the Al concentration are studied, and comparison with the alloy AlxGa1−xAs is made. Our results provide a guide to the band-gap engineering of the random superlattices.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 129-131 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum size effect in thin antimony films grown along (111) direction on a GaSb substrate is studied based on a simple model. The critical film thickness, at which the semimetal-semiconductor transition takes place, is determined. It is proposed that the optical experiments can be used to measure the critical thickness since the dependence of optical transition on thickness in the semimetal region is very different from that in semiconductor region.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2111-2113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible room-temperature photoluminescence (PL) has been observed from stain-etched polycrystalline Si thin films. Poly-Si thin films deposited on oxidized Si and quartz substrates became porous (PoSi) after stain-etching in a 1:3:5 solution of HF:HNO3:H2O. Under UV excitation, the stain-etched doped and undoped poly-Si films produce uniform orange-red (∼650 nm) luminescence very similar to that obtained from stain-etched crystalline Si substrates. Stained amorphous thin films did not exhibit photoluminescence. Luminescent patterns with sub-micrometer (∼0.6 μm) dimensions have been obtained for the first time from PoSi produced from poly-Si films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1982-1984 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incubation time (ti) for the onset of porous Si formation by stain etching in HF:HNO3:H2O was observed to be a strong function of dopant type and concentration. For B-doped p-Si, ti increased significantly with substrate resistivity (ρ), from ∼0.5 min for 0.004 Ω cm to ∼9 min for 50 Ω cm. P-doped n-Si substrates exhibited a ti which decreased with increasing ρ, from ∼10 min for 0.15 Ω cm to ∼8 min for 20 Ω cm. We have utilized the difference in ti between n- and p-type Si to produce selective area photoluminescence (PL) by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, PL patterns with submicrometer resolution have been obtained for the first time.
    Type of Medium: Electronic Resource
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