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  • 1990-1994  (28)
  • 1994  (28)
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  • 1990-1994  (28)
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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis, structure, and physical properties of niobium phosphate bronze (Nb18P2.5O50) (1994)
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 267-270 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00080a014
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Heat transfer between two metallic surfaces at small distances (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7209-7216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In scanning thermal microscopy, but also in scanning tunneling microscopy, the thermal contact between tip and sample plays an important role. The heat transfer across the vacuum gap between two parallel metallic surfaces, if the gap width is decreased below several microns, has been investigated. At these distances propagating electromagnetic modes die out but simultaneously a transfer of nonpropagating surface modes across the gap becomes more probable. The heat conductance of the vacuum gap should become distance dependent and larger than that given by the Stefan–Boltzmann law; however, the experimental results and theoretical considerations indicate that the heat transfer, based on the discussed proximity mechanism, is very small, smaller than predicted by the theory of Polder and Van Hove [Phys. Rev. B 4, 3303 (1971)]. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358001
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic structures of Sb/Ga(Al)Sb (111) semimetal-semiconductor superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5318-5326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structures of semimetal-semiconductor (Sb2)m/(GaSb)n (111) and (Sb2)m/(AlSb)n (111) (m,n≤10) superlattices are calculated by using a tight-binding theory including spin-orbit interaction. It is found that a narrow gap forms in these materials due to the quantum confinement effect. This may allow strong optical nonlinearity in the infrared region. With increasing the thickness of the Sb layer, a possible semiconductor-semimetal transition is suggested at a certain thickness. The influence of interface states on the formation of the band gap is investigated by adjusting the interface relaxation and band offsets. Our study shows that semimetal-semiconductor Sb/Ga(Al)Sb superlattices could potentially open a new possibility in electro-optical device manufactures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357183
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal sensors for investigation of heat transfer in scanning probe microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2262-2266 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Planar thermocouples designed for investigation of heat transfer in scanning tunneling microscopy and scanning thermal microscopy are described. The limit of sensitivity to local thermal power can be as small as 10 nW. The devices are based on two different thin films formed as a cross on a thin glass substrate. Heat fluxes in the cross point can be detected by measuring the thermoelectric signal from two ends of the cross. As described elsewhere planar thermocouples of this type have been successfully used to detect the energy which is deposited by tunneling electrons and to measure the heat which is coupled across a submicron vacuum gap between two metals by the fluctuating fields of electromagnetic surface modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145225
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  • 5
    Electronic Resource
    Electronic Resource
    Band discontinuities in the (Pb,Eu)Se system determined by frequency-dependent admittance analysis (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band discontinuities in anisotype Pb1−xEuxSe/PbSe single heterojunctions are determined using frequency-dependent admittance analysis. A four component small signal equivalent circuit model is proposed to describe the diode admittance. Good agreement between the simulation results and experimental data have been obtained. The band discontinuities are evaluated at 130 K for x〈0.05.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113050
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  • 6
    Electronic Resource
    Electronic Resource
    Enhancement of optical absorption induced by disorder in three-dimensional random superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 443-445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of disorder on the optical absorption of the realistic random superlattice has been investigated based on a three-dimensional tight-binding Hamiltonian. It is found that the absorption intensity close to the band edge of the random superlattice is considerably enhanced, which can be explained by optical matrix elements of the relevant eigenfunctions localized strongly over 2–4 monolayers. An energy-level crossing behavior at the conduction-band bottom is also obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111123
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  • 7
    Electronic Resource
    Electronic Resource
    Spiral growth of GaAs by metalorganic vapor phase epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1959-1961 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth spirals are observed on metalorganic vapor phase epitaxy grown GaAs surfaces by atomic force microscopy. The growth mechanism is according to the classical Burton–Cabrera–Frank theory. Spirals originate from screw dislocations. Successive turns of steps are sent out by the dislocations. These steps are of monolayer height (0.28 nm) and the interstep distance is around 150 nm. The spiral steps are well developed around the screw dislocations, while the adjacent vicinal steps lack the regularity of the spiral steps. Two-dimensional nucleation islands are also observed on the vicinal steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111755
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  • 8
    Electronic Resource
    Electronic Resource
    Selective-area room temperature visible photoluminescence from SiC/Si heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1419-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiC/Si heterostructures have been patterned by reactive ion etching with CHF3/O2 to produce SiC-covered and Si-exposed regions with lateral dimensions of 2.5 to ∼500 μm. The patterned samples were then anodized in HF/ethanol solutions. Short anodization times (〈3 min) result in selective-area UV-induced visible photoluminescence (PL), with a peak located at 650 nm, being observed at 25 °C from only the SiC-covered regions. The emission is generated by porous Si (PoSi) selectively formed under the SiC cap and transmitted through the wide band-gap SiC layer. Longer etching times result in nonselective PL.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111902
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  • 9
    Electronic Resource
    Electronic Resource
    Spiral growth of GaAs by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Steps of monolayer height (0.28 nm) were observed by atomic force microscopy on a GaAs surface grown by molecular beam epitaxy. The monolayer terrace width between steps was found to be as large as 1000 nm in some areas. Surface reconstruction affects the surface diffusion process during growth and the shape of the step edges. Growth spirals were observed. Spirals originate from screw dislocations. The growth mechanism is according to the Burton–Cabrera–Frank theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112941
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  • 10
    Electronic Resource
    Electronic Resource
    Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet etching (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is reported for the fabrication of optically active Si microstructures embedded in a crystalline Si (c-Si) substrate. The process combines Si microstructure fabrication by localized high dose Ga+ (1016/cm2) focused ion beam (FIB) implantation at 30 kV into n-type (100) Si followed by anisotropic etching in KOH:H2O (1:5 by volume). Self-selective porous Si (PoSi) formation of the microstructures is obtained by stain etching in HF:HNO3:H2O (1:3:5 by volume). Upon UV 365 nm or Ar+ 488 nm excitation, selective visible room-temperature photoluminescence (PL) was observed from the Si microstructures only. The PL, peaked at ∼670 nm with a full width at half-magnitude (FWHM) of ∼130 nm, is similar to that of PoSi obtained from c-Si substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112799
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