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  • 1995-1999  (1)
  • 1975-1979
  • 1995  (1)
  • CdTe  (1)
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  • 1995-1999  (1)
  • 1975-1979
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  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 157-161 
    ISSN: 1057-9257
    Keywords: CdTe ; iodine doping ; diffusion ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Studies on the diffusion of iodine into CdTe at a temperature of 20°C using four widely differing types of diffusion sources are compared and discussed. The concentration profiles were measured using either a radiotracer sectioning (RTS) technique or secondary ion mass spectrometry (SIMS).The profiles were composed of four parts to which a computer package consisting of the sum of four complementary error functions (erfc) gave accurate fits, providing four empirical values of the diffusivity. The diffusivities for the fastest component in all four cases were in agreement (∼2 × 10-14 cm2 s-1) and were consistent with previously published data. These results indicate that when iodine is diffused from the vapour it is not a suitable long-termstable dopant in devices where sharp junctions are required.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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