Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (7)
  • 1996  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Near band edge absorption spectra of narrow-gap III–V semiconductor alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4045-4048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near band edge absorption spectra of the narrow-gap semiconductor alloys InxTl1−xP, InxTl1−xAs, and InxTl1−xSb were calculated and compared with those of HgxCd1−xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxTl1−xP is found to have about the same magnitude as that in HgxCd1−xTe and GaAs, whereas that in InxTl1−xAs and InxTl1−xSb is much smaller. This result and other merits found from previous studies indicate that InxTl1−xP has a potential to compete favorably with HgxCd1−xTe for long-wavelength infrared applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363364
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1233-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362860
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Exciton dynamics in a novel high-yield GaInP quantum-wire array (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the carrier dynamics in a spontaneously organized array of quantum wires grown by a novel technique that involves strain induced lateral ordering (SILO). Our cw–photoluminescence (PL) measurements reveal a very strong optical anisotropy associated with these wires, while the time-resolved PL measurements demonstrate a very interesting carrier dynamics due to localization of excitons and slow interwire scattering. The high quality and freedom from defects of the SILO multiple quantum wire array are nicely borne out by the long decay photoluminescence times (∼4 ns). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117147
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2386-2388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 A(ring)/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Hydrocarbon composition of products from combined hydrogenation of shubarkol coal and heavy petroleum resid (1996)
    Springer
    Chemistry and technology of fuels and oils 32 (1996), S. 203-204 
    Details
    ISSN: 1573-8310
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00731846
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    ON THE STRUCTURE OF STEADY FLOW THROUGH DUAL-INTAKE ENGINE PORTS (1996)
    Chichester : Wiley-Blackwell
    International Journal for Numerical Methods in Fluids 23 (1996), S. 1085-1109 
    Details
    ISSN: 0271-2091
    Keywords: intake port ; dual intake ; CFD ; laser Doppler anemometry ; internal combustion engine ; cylinder ; turbulence ; steady flow ; Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The influence of intake port design on the flow field in a dual-intake valve engine was investigated using computational fluid dynamics, in order to study the effect of inlet port design on the in-cylinder flow. A detailed 3D computational grid incorporating all the features of the Ford Zetec production engine inlet ports, valves and cylinder head was initially created and the flow structure modelled at 5 and 10 mm valve lifts under steady flow conditions. Comparisons of computational results with experimental data obtained by laser Doppler anemometry indicate that the flow characteristics have been predicted well in most regions. Flow generated by different intake port designs was also simulated by introducing air into the cylinder at different directions to the inlet valve axes and the effects of port deactivation, throttling and exhaust gas recirculation were examined. The implications of the results for intake port design are discussed.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...