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  • 2000-2004
  • 1995-1999  (2)
  • 1990-1994
  • 1997  (2)
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  • 2000-2004
  • 1995-1999  (2)
  • 1990-1994
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  • 1
    Electronic Resource
    Electronic Resource
    Scaling behavior of 1/f noise in high-temperature superconductor Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 120-122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extensive studies of the low frequency 1/f noise in high-temperature superconducting (HTS) Josephson junctions of various types and materials have been performed for a wide range of operating parameters. The origin of the measured voltage fluctuations can be traced back to the trapping and release of charge carriers in trapping centers in an insulating barrier, giving rise to correlated fluctuations of the junction critical current Ic and normal-state resistance Rn. We observed a linear dependence of the normalized critical current and resistance fluctuations on Rn, which suggests a constant density of trapping centers for the HTS Josephson junctions. The scaling of the normalized fluctuations is in good agreement with the previously found scaling relation IcRn∝1/Rn and supports a junction model assuming a leaky tunnel barrier. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119281
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  • 2
    Electronic Resource
    Electronic Resource
    Quasiparticle tunneling in HTS grain boundary Josephson junctions (1997)
    Springer
    Journal of low temperature physics 106 (1997), S. 243-248 
    Details
    ISSN: 1573-7357
    Keywords: 85.25. Cp ; 74.50.+r ; 85.70.-w
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The quasiparticle tunneling (QPT) in YBa2Cu3O7−δ (YBCO), Bi2Sr2CaCu2O8+x (BSCCO), Nd1.85Ce0.15CuOx (NCCO) and La1.85Sr0.15CuO4−δ (LSCO) grain boundary Josephson junctions (GBJs) has been studied. At voltages above the gap voltage V9, the measured conductance vs. voltage, G(V), curves show a temperature independent parabolic shape allowing the determination of the effective height and thickness of the insulating grain boundary barrier. At |V|〈Vg, the G(V)-curves are well fitted by a BCS density of states and temperature dependence of the energy gap, if a large broadening parameter Γ is assumed for the gap. The large Γ value most likely is related to the high density of localized states within the grain boundary barrier. Furthermore, a zero-bias conductance anomaly is observed which can be analyzed in terms of spin-flip and Kondo-type scattering at the interface (Anderson-Appelbaum model).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02399621
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    Paper (German National Licenses)
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