Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of deformation-assisted crystallization in amorphous Fe78B13Si9 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1805-1807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-energy ball milling of amorphous Fe78B13Si9 has been performed at temperatures between 25 and 250 °C. Primary crystallization is observed after milling at elevated temperatures, but not after annealing at the same temperatures. Although milling at room temperature creates nucleation sites for primary crystallization, subsequent annealing at elevated temperature does not result in significant crystallization. Heating by ball impact and contamination by the milling tools during milling are ruled out as the causes for crystallization. The observed behavior is interpreted to be caused by diffusivity enhancement due to milling-produced defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122288
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1926-1928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkably low turn-on field of about 1 V/μm has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of 1.0×1018 ions/cm2 with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121229
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Magnetic domain structures of Co22Ag78 granular films observed by magnetic force microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2472-2474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magnetic force microscope (MFM) was used to image the topography and magnetic microstructures of Co22Ag78 granular films. The observed morphology shows isolated nanometer-scale cobalt particles (granules) embedded in the silver matrix. Stripe magnetic domains with much larger size (typically of ∼100 nm wide) than that of cobalt particles are resolved clearly on MFM micrographs for the annealed samples. It is demonstrated that the domain width and the relative magnetic force strength first increases and then decreases with annealing temperature with a maximum at about 600 K. We suggest that the appearance of the stripe domains is attributed to magnetic correlation among many of the isolated single-domain cobalt particles and is dependent on the microstructure of the samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121393
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8-14 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20° down to 11° and threshold current density of less than 131 A/cm2 can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given and discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366727
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Experimental investigation of physical mechanisms underlying lateral current injection laser operation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By comparing theoretical prediction with experimental performance, we gain insight into the physical operation of lateral current injection lasers. By studying the temperature dependence of lasing stimulated efficiency, we demonstrate the influence of lateral heterobarriers (achieved in this experiment by quantum well intermixing) on the confinement of carriers to the active region. By comparing the evolution of threshold current with temperature for devices of differing contact separations with a self-consistent model of lateral current injection laser operation, we reveal the importance of the interplay between the lateral material gain profile and the optical mode. Understanding these mechanisms, unique to the lateral injection family of lasers, is key to realizing the tremendous potential of this class of lasers to enable optoelectronic integration and novel functional devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121796
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3845-3847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 °C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 μm in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122912
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Guided ion beam studies of the reactions of Vn+ (n=2–17) with O2: Bond energies and dissociation pathways (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 9339-9350 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the reactions of Vn+ (n=2–17) with oxygen is studied using a guided ion beam mass spectrometer. In all but the smallest clusters, the primary reaction process at low energies is the formation of a vanadium cluster dioxide ion which then loses one or two vanadium atoms or a vanadium oxide diatom (VO). Vanadium atom loss is the preferred reaction pathway for large clusters (n≥5), whereas loss of VO is more favorable for the smallest reactant clusters (n≤4). As the collision energy is increased, these primary products dissociate further by loss of additional vanadium atoms. Bond dissociation energies of the vanadium cluster oxides are determined by analysis of the kinetic energy dependence of several different products. The effect of oxygen atoms on the stabilities of vanadium cluster ions is discussed and compared with bulk phase thermochemistry. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    (NH4)3[PMo12O40].21H2O (1998)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 9-11 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197011128
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    (NH4)2Na3(V3W3O19).12H2O (1998)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 563-565 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197016417
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    [Ni(C10H8N2)3]2[V4O12].11H2O (1998)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 616-618 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197018751
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...