Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 2555-2559
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnSe1−xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1−xTex epilayers was found to increase with the Te concentration. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367015
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