ZIB

1

Electronic Resource

Optical properties of the ZnSe1−xTex epilayers grown by molecular beam epitaxy (1998)

Yang, C. S. ; Hong, D. Y. ; Lin, C. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 2555-2559

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: ZnSe1−xTex epilayers were grown on a GaAs (001) substrate with 0°, 3°, 10°, and 15° tilts toward [110] by molecular beam epitaxy. The energy gap was found to increase with the substrate tilt angle. In addition, a Te-bound exciton and an exciton bound to the Te cluster in the photoluminescence spectra have been identified. The threshold temperature for the observation of the Te-bound exciton in the photoluminescence spectrum of ZnSe1−xTex epilayers was found to increase with the Te concentration. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367015

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

2

Electronic Resource

Energy-dispersive x-ray diffraction and Raman scattering of Zn1−xMnxSe bulk crystals at high pressure (1999)

Yang, C. S. ; Ro, C. S. ; Chou, W. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 8092-8096

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Energy-dispersive x-ray diffraction experiments were carried out to investigate the structure of phase transitions under high pressure. It was found that the zinc blende (B3) to rock salt (B1) phase transition pressures of Zn0.93Mn0.07Se and Zn0.76Mn0.24Se bulk crystals are found 11.8±1.5 and 9.9±0.5 GPa, respectively. The respective bulk moduli are 61.8±0.8 and 60.5±0.8 GPa. The pressure-induced zinc blende (ZB) to rock salt (RS) structure phase transition is interpreted as a signature of the semiconductor to metal transition for Zn1−xMnxSe. The above interpretation is further corroborated by the observation of the disappearance of the longitudinal optical phonon at the pressure where the ZB to RS structure transition occurs. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370647

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

3

Electronic Resource

Optical properties of ZnSe1−xSx epilayers grown on misoriented GaAs substrates (1998)

Chou, W. C. ; Yang, C. S. ; Chu, A. H. M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 2245-2250

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The strain induced heavy hole and light hole exciton splitting of ZnSe1−xSx (x〈0.1) epilayers grown on misoriented GaAs (001) substrates has been studied by reflectance spectroscopy. The heavy hole and light hole exciton energies are determined by the composition of the layers. It was concluded that for both thin (largely unrelaxed strain) and thick epilayers (with largely relaxed strain) misorientation of the substrate results in increase of x, i.e., in increasing incorporation of sulphur. However, the additional strain expected due to the increasing incorporation of sulphur with misorientation was not observed due to partial strain relief of the epilayers grown on misoriented substrates. The optical quality of the epilayers is tilt angle dependent and is best for about 10° tilt from the (001) direction. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368360

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext