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  • 2005-2009
  • 1995-1999  (65)
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  • 1999  (65)
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Erscheinungszeitraum
  • 2005-2009
  • 1995-1999  (65)
  • 1935-1939
  • 1925-1929
  • 1920-1924
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Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4107-4117 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a detailed study of the recently discovered modulation at frequencies of hundreds of MHz of an electron beam produced by a plasma cathode. The plasma cathode consists of a ferroelectric disk sample [BaTiO3 or Pb(Zr, Ti)O3] that is placed in a cylindrical metal box having an output window covered by a grid. The plasma is prepared by an incomplete discharge that was ignited by a few kV driving pulse applied across the ferroelectric disk. It was shown that the current modulation appears only when the driving pulse is applied to the front gridded electrode of the ferroelectric sample and the solid rear electrode is grounded. The modulation spectrum is quite narrow (≤3%), with harmonics at frequencies up to a few GHz. The basic frequency of modulation was found to be dependent on the length of the feed cable to the sample. Investigation of the plasma and the beam modulation properties and their dependence on the experimental parameters is presented. The results indicate the formation of a plasma at the vicinity of the front electrode of the ferroelectric sample during the modulation. The results are discussed within the frame of electrons oscillating in the potential well created by the positively charged plasma having feedback coupling with the input cable. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The issue of lateral stress measurements, with piezoresistance gauges, is discussed by Feng et al. [J. Appl. Phys. 82, 2845 (1997)] and Feng and Gupta [J. Appl. Phys. 83, 747 (1998)] using 2D numerical simulations. The purpose of this Comment is to highlight the difficulties with these simulations and to emphasize some of the results obtained in these articles, which strongly support our analytical approach to the subject. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4612-4617 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In situ microscopic and spectroscopic studies of samples allow us to understand the mechanisms and measure kinetics of phase transformations in materials. We use a light microscope and a Raman microspectrometer to study phase transformations induced by contact loading. Many interesting phenomena occur in materials during indentation that can only be analyzed during indentation, in situ. By analyzing what occurs to ceramics and semiconductors in situ we can gain valuable insight into the mechanisms and kinetics of phase transformation. A microindentation device has been designed and fabricated to achieve these objectives. The microindentation device can provide the means to study pressure-induced phase transformations in real time. The basic design of the device is adaptable to several configurations, so that the device may be used in a wide variety of applications. The device consists of a piezoelectric actuator (piezoelectric translator), load cell, linear microscrew stage, translation stage containing the specimen mount and specimen holder, and diamond-tip indenter. For the first time, an indentation tester has been coupled with a Raman microspectrometer to conduct in situ studies of pressure-induced phase transformations. This article describes the design, operation, and experimentation of a microindentation device for the in situ analysis of pressure-induced phase transformations in materials. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    ISSN: 1471-4159
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Abstract : We found that several nitric oxide donors had similar potency in killing mature and immature forms of oligodendrocytes (OLs). Because of the possibility of interaction of nitric oxide with intracellular thiols, we tested the effect of the nitrosonium ion donor S-nitrosylglutathione (SNOG) in OL cultures in the setting of cystine deprivation, which has been shown to cause intracellular glutathione depletion. Surprisingly, the presence of 200 μM SNOG completely protected OLs against the toxicity of cystine depletion. This protection appeared to be due to nitric oxide, because it could be blocked by hemoglobin and potentiated by inclusion of superoxide dismutase. We tested the effect of three additional NO• donors and found that protection was not seen with diethylamine NONOate, a donor with a half-life measured in minutes, but was seen with dipropylenetriamine NONOate and diethylaminetriamine NONOate, donors with half-lives measured in hours. This need for donors with longer half-lives for the protective effect suggested that NO• was required when intracellular thiol concentrations were falling, a process evolving over hours in medium depleted of cystine. These studies suggest a novel protective role for nitric oxide in oxidative stress injury and raise the possibility that intracerebral nitric oxide production might be a mechanism of defense against oxidative stress injury in OLs.
    Materialart: Digitale Medien
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  • 5
    ISSN: 1471-4159
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Abstract : Diffuse axonal injury is a primary feature of head traumaand is one of the most frequent causes of mortality and morbidity. Diffuseaxonal injury is microscopic in nature and difficult or impossible to detectwith imaging techniques. The objective of the present study was to determinewhether axonal injury in head trauma patients could be quantified by measuringlevels of CSF tau proteins. Tau proteins are structural microtubule bindingproteins primarily localized in the axonal compartment of neurons. Monoclonalantibodies recognizing the form of tau found in the CSF of head traumapatients were developed by differential CSF hybridoma screening using CSF fromhead trauma and control patients. Clones positive for head trauma CSF tauproteins were used to characterize this form of tau and for ELISA development.Using the developed ELISA, CSF tau levels were elevated 〉1,000-fold in headtrauma patients (mean, 1,519 ng/ml of CSF) when compared with patients withmultiple sclerosis (mean, 0.014 ng/ml of CSF ; p 〈 0.001), normalpressure hydrocephalus (nondetectable CSF tau), neurologic controls (mean,0.031 ng/ml of CSF ; p 〈 0.001), or nonneurologic controls(nondetectable CSF tau ; p 〈 0.001). In head trauma, a relationship between clinical improvement and decreased CSF tau levels was observed. These data suggest that CSF tau levels may prove a clinically useful assay for quantifying the axonal injury associated with head trauma and monitoring efficacy of neuroprotective agents. Affinity purification of CSF tau from head trauma patients indicated a uniform cleavage of ~ 18 kDa from all six tau isoforms, reducing their apparent molecular sizes to 30-50 kDa. These cleaved forms of CSF tau consisted of the interior portion of the tau sequence, including the microtubule binding domain, as judged by cyanogen bromide digestion. Consistent with these data, CSF cleaved tau bound taxolpolymerized microtubules, indicating a functionally intact microtubule binding domain. Furthermore, epitope mapping studies suggested that CSF cleaved tau proteins consist of the interior portion of the tau sequence with cleavage at both N and C terminals.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Oxford BSL : Blackwell Science Ltd
    Clinical and experimental dermatology 24 (1999), S. 0 
    ISSN: 1365-2230
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6707-6709 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lateral stress measurements in a tungsten alloy, in combination with known Hugoniot data, have been used to find the shear strength of this material, and its variation with longitudinal shock stress, up to 14 GPa. Results show that the shear strength increases significantly with increasing stress. Prior to this work, there has been disagreement in the literature on the effect of shock stress on the shear strength of tungsten and its alloys. The present work agrees with the data obtained by Zhou and Clifton [J. Appl. Mech. 64, 487 (1997)] who used pressure shear. However, the range of stresses studied has been greatly extended. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2945-2947 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electromigration in 0.15–10 μm wide and 0.3 μm thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 255–405 °C. For wide polycrystalline lines (〉1 μm), the dominant diffusion mechanism is a mixture of grain boundary and surface diffusion, while in narrow lines (〈1 μm) the dominant mechanism is surface transport. The activation energy for grain-boundary transport is approximately 0.2 eV higher than that of surface transport. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2274-2276 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A room-temperature photoenhanced chemical wet etching process for n-type GaAs using x rays from a synchrotron radiation source is described. HNO3:H2O was used as the etching solution. This process produces smoothly etched surfaces on n-GaAs with a root-mean-square surface roughness of 0.7–2.0 nm, which compares favorably to the unetched surface roughness (0.4 nm). Dependence of the etching rate on x-ray intensity and energy, solution concentration, and semiconductor doping type are reported. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    ISSN: 0009-6407
    Quelle: Cambridge Journals Digital Archives
    Thema: Geschichte , Theologie und Religionswissenschaft
    Materialart: Digitale Medien
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