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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2062-2068 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A third-generation synchrotron radiation source provides enough brilliance to acquire complete tomographic data sets at 100 nm or better resolution in a few minutes. To take advantage of such high-brilliance sources at the Advanced Photon Source, we have constructed a pipelined data acquisition and reconstruction system that combines a fast detector system, high-speed data networks, and massively parallel computers to rapidly acquire the projection data and perform the reconstruction and rendering calculations. With the current setup, a data set can be obtained and reconstructed in tens of minutes. A specialized visualization computer makes rendered three-dimensional (3D) images available to the beamline users minutes after the data acquisition is completed. This system is capable of examining a large number of samples at sub-μm 3D resolution or studying the full 3D structure of a dynamically evolving sample on a 10 min temporal scale. In the near future, we expect to increase the spatial resolution to below 100 nm by using zone-plate x-ray focusing optics and to improve the time resolution by the use of a broadband x-ray monochromator and a faster detector system. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: Beamline 2-BM at the Advanced Photon Source has been fully commissioned for a range of x-ray microtechniques including micromachining, microtomography, and microcharacterization by scattering and fluorescence. The beamline has been designed and constructed to provide a highly collimated beam with great flexibility in tuning the energy bandpass. To achieve this, the beamline incorporates two mirrors, filters, and two monochromators allowing selection of energy in the range of 3–33 keV with a bandpass in the range of 1–1000 eV. The endstation includes precision instrumentation for deep x-ray lithography, x-ray microtomography, x-ray imaging, x-ray optics characterization, and the development of techniques for high-throughput x-ray microcharacterization of libraries of samples. The various experimental systems are controlled and integrated in the station to allow for the flexibility of techniques, while improving efficiency of use. We describe in detail the beamline design, capabilities, and endstation instrumentation. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: For soft x-ray fluorescence spectroscopy with selective energy excitation, it is desirable to have maximum flux at moderate resolution. A plane grating monochromator with varied line spacing can be used in the convergent beam of an ellipsoidal focusing mirror to provide moderate resolution with a large collection angle and minimum number of reflecting surfaces. We determine the design parameters for a varied-line-space grating monochromator to provide light in the 200–1000 eV range. The results of modeling are discussed with respect to the optimal choices of monochromator for our experimental requirements. A novel mechanical design is proposed for constructing the monochromator in a compact form with the minimum number of moving parts and alignments. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3033-3040 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The results of room-temperature wet etching of GaAs using synchrotron-radiation x rays are described. Under x-ray illumination, etching occurs on the n-GaAs surface in contact with an acid or base solution or even deionized water. The etching process is studied as functions of the electrolytes, their concentration, semiconductor doping level, and x-ray intensity and energy. The etching mechanism is determined to be primarily electrochemical in nature, but the x-ray radiation chemistry plays a role in the etching. Smoothly etched surfaces are achievable with a root-mean-square surface roughness of 0.7–2.0 nm. We also found that the etching rate increases substantially with the ratio of the sample size to the x-ray exposure size. This is accounted for by the rate-limiting effect on the charge transfer across the semiconductor-electrolyte junction. The chemistry of etched surfaces is studied using x-ray photoelectron spectroscopy and compared to that of as-received surfaces. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2550-2553 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We present the first results of use of the high power x-rays from an insertion device beamline at the Advanced Photon Source for welding. X-rays with energies between 3 and 200 keV and power densities greater than 10 000 W/cm2 can penetrate deeply into most materials and thus can be used as volumetric heating sources. In this article we show results of bead-on-plate welds of a 3.3-mm-thick Al/Al2O3 metal-matrix composite and discuss results obtained for other materials. The potential of x-rays for welding is also discussed. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2014-2016 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room-temperature photoinduced, selective-area deposition of gold films on polyimide from gold salt solution using synchrotron radiation x rays is described. A film growth rate as high as 40 nm/min is obtained. For thickness 〈50 nm, the films consist of nanograins with a grain size of about 200 nm. For thicker films, gold deposit forms a ramified morphology on top of the nanograin film. The change in morphology is discussed in terms of the change in the yield of the photoelectrons generated by x rays as a function of growth. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1319-1321 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A sample size effect on the etching rate in the photoelectrochemical etching of n-GaAs is demonstrated using synchrotron radiation x rays as the light source. It is shown that the etching rate increases significantly with the ratio of sample size to x-ray illuminated area. The rate-limiting effect on the charge transfer across the semiconductor–electrolyte junction is found to account for the phenomenon. It is also found that the etching rate relates to the nonilluminated area with a rather simple function. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2274-2276 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A room-temperature photoenhanced chemical wet etching process for n-type GaAs using x rays from a synchrotron radiation source is described. HNO3:H2O was used as the etching solution. This process produces smoothly etched surfaces on n-GaAs with a root-mean-square surface roughness of 0.7–2.0 nm, which compares favorably to the unetched surface roughness (0.4 nm). Dependence of the etching rate on x-ray intensity and energy, solution concentration, and semiconductor doping type are reported. © 1999 American Institute of Physics.
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