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  • 1
    Digitale Medien
    Digitale Medien
    Wet etching of GaAs using synchrotron radiation x rays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3033-3040 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The results of room-temperature wet etching of GaAs using synchrotron-radiation x rays are described. Under x-ray illumination, etching occurs on the n-GaAs surface in contact with an acid or base solution or even deionized water. The etching process is studied as functions of the electrolytes, their concentration, semiconductor doping level, and x-ray intensity and energy. The etching mechanism is determined to be primarily electrochemical in nature, but the x-ray radiation chemistry plays a role in the etching. Smoothly etched surfaces are achievable with a root-mean-square surface roughness of 0.7–2.0 nm. We also found that the etching rate increases substantially with the ratio of the sample size to the x-ray exposure size. This is accounted for by the rate-limiting effect on the charge transfer across the semiconductor-electrolyte junction. The chemistry of etched surfaces is studied using x-ray photoelectron spectroscopy and compared to that of as-received surfaces. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1345859
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  • 2
    Digitale Medien
    Digitale Medien
    X-ray welding of metal-matrix composites (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2550-2553 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We present the first results of use of the high power x-rays from an insertion device beamline at the Advanced Photon Source for welding. X-rays with energies between 3 and 200 keV and power densities greater than 10 000 W/cm2 can penetrate deeply into most materials and thus can be used as volumetric heating sources. In this article we show results of bead-on-plate welds of a 3.3-mm-thick Al/Al2O3 metal-matrix composite and discuss results obtained for other materials. The potential of x-rays for welding is also discussed. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1148159
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  • 3
    Digitale Medien
    Digitale Medien
    Synchrotron-radiation-induced reactions of tetraethoxysilane on Si studied by photoemission spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7304-7309 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The synchrotron-radiation (SR)-induced chemical reactions of tetraethoxysilane Si(OC2H5)4 (TEOS) adsorbed on Si has been studied using photoemission spectroscopy. It is demonstrated that TEOS adsorbs intact on the Si surface below room temperature. SR in the vacuum ultraviolet region decomposes the TEOS molecules adsorbed on Si to form a silicon-oxide-like film on the Si surface, but some carbon remains in the film. Results of irradiation experiments on condensed layers of TEOS and water adsorbed on Si at 85 K indicate that the presence of water reduces the carbon contamination.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356640
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  • 4
    Digitale Medien
    Digitale Medien
    Microscopic chemical state identification of a silicon-carbide fiber by soft x-ray photoabsorption spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Chemical states of a 140 μm silicon carbide fiber are determined by soft x-ray photo-absorption spectroscopy, using a magnetic projection photoelectron microscope, performed on the surface obtained by fracturing. The spectrum of the carbon core of the fiber has prominent π* and σ* resonance peaks and is very similar to that measured on highly oriented pyrolitic graphite, indicating a graphitic nature of the carbon core. The spectrum of the silicon carbide coating of the fiber reveals similar features to those of single-crystal silicon carbide, indicating that this coating is in the crystalline or polycrystalline phase. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118881
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  • 5
    Digitale Medien
    Digitale Medien
    Synchrotron-radiation-induced anisotropic wet etching of GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A room-temperature photoenhanced chemical wet etching process for n-type GaAs using x rays from a synchrotron radiation source is described. HNO3:H2O was used as the etching solution. This process produces smoothly etched surfaces on n-GaAs with a root-mean-square surface roughness of 0.7–2.0 nm, which compares favorably to the unetched surface roughness (0.4 nm). Dependence of the etching rate on x-ray intensity and energy, solution concentration, and semiconductor doping type are reported. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.124988
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  • 6
    Digitale Medien
    Digitale Medien
    Sample size effect in photoelectrochemical etching of n-GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1319-1321 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A sample size effect on the etching rate in the photoelectrochemical etching of n-GaAs is demonstrated using synchrotron radiation x rays as the light source. It is shown that the etching rate increases significantly with the ratio of sample size to x-ray illuminated area. The rate-limiting effect on the charge transfer across the semiconductor–electrolyte junction is found to account for the phenomenon. It is also found that the etching rate relates to the nonilluminated area with a rather simple function. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1289908
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  • 7
    Digitale Medien
    Digitale Medien
    Synchrotron-radiation-induced, selective-area deposition of gold on polyimide from solution (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Room-temperature photoinduced, selective-area deposition of gold films on polyimide from gold salt solution using synchrotron radiation x rays is described. A film growth rate as high as 40 nm/min is obtained. For thickness 〈50 nm, the films consist of nanograins with a grain size of about 200 nm. For thicker films, gold deposit forms a ramified morphology on top of the nanograin film. The change in morphology is discussed in terms of the change in the yield of the photoelectrons generated by x rays as a function of growth. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126239
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  • 8
    Digitale Medien
    Digitale Medien
    Plasma cleaning of beamline optical components: Contamination and gas composition effects : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1486-1489 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have initiated a program to study the impact of gas composition on the carbon removal rate during plasma cleaning of optical components, and of possible contamination due to the plasma processing. The measurements were performed in a test chamber designed to simulate the geometry of the grating/Codling mirror section of a Grasshopper monochromator. Removal rates were determined for a direct-current (dc) (Al electrode) discharge using a quartz crystal microbalance coated with polymethylmethacrylate, located at the position of the grating. Auger electron spectroscopy analysis of strateg- ically located, gold-coated stainless steel samples was employed to determine contamination. The relative removal rates of the gases studied were 3% C2F6/O2(very-much-greater-than) O2+H2O(approximately-greater-than)O2∼N2O(approximately-greater-than)H2(approximately-greater-than)N2. Although the C2F6/O2 gas mixture showed a 20 times greater removal rate than its nearest competitor, it also caused significant contamination to occur. Contamination studies were performed for both dc and radio-frequency (rf) discharges. For the dc discharge we found that great care must be taken in order to avoid Al contamination; for the rf discharge, significant Fe contamination was observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1143049
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