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  • 1
    Electronic Resource
    Electronic Resource
    Multiphonon hopping conduction in nonconventional chromium-doped Bi3Pb1Sr3Ca3Cu4−nCrnOx (n=0.025–0.2) glasses with nanocrystalline particles and clusters (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5033-5042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport properties of Cr containing multicomponent oxide glasses Bi3Pb1Sr3Ca3Cu4−nCrnOx (n=0.025, 0.05, 0.1, and 0.2) dispersed with nanocrystalline particles (5–20 nm depending on the values of n) have been reported in the temperature range of 250–450 K. Conductivity of this glass-nanocrystal composite system shows little decrease with increasing Cr content. Above θD/2 (θD is the Debye temperature), conductivity data can be analyzed with small polaron hopping models. Interestingly, unlike undoped Bi4Sr3Ca3Cu4Ox (or Bi-4334) glasses [showing nonadiabatic small polaron hopping (SPH) conduction at T〉θD/2], the Cr doped glasses supports adiabatic SPH conduction mechanism above θD/2 indicating change of glass network structure due to partial substitution of Cu by Cr. But below this temperature Mott's or Greaves' variable range hopping models can be consistently used to fit the experimental conductivity data only with larger (compared to the usual transition metal oxide glasses) values of the density of states at the Fermi level N(EF). The most probable transport mechanism for the entire range of temperature and glass compositions is concluded to be due to multiphonon tunneling of large polarons between the nanoclusters present in the glasses which is also in sharp contrast to the behavior of the undoped (Bi-4334) glass. All the glass samples (except n≥0.2) are found to become superconductors by annealing at higher temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1317237
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1−xSbx (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2476-2478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Half-Heusler alloys (MgAgAs type) with the general formula MNiSn where M is a group IV transition metal (Hf, Zr, or Ti) are currently under investigation for potential thermoelectric materials. These materials exhibit a high negative thermopower (−40 to −250 μV/K) and low electrical resistivity values (0.1–8 mΩ cm) both of which are necessary for a potential thermoelectric material. Results are presented in this letter regarding the effect of Sb doping on the Sn site (TiNiSn1−xSbx). The Sb doping leads to a relatively large power factor of (0.2–1.0) W/m K at room temperature for small concentrations of Sb. These values are comparable to that of Bi2Te3 alloys, which are the current state-of-the-art thermoelectric materials. The power factor is much larger at T(approximate)650 K where it is over 4 W/m K making these materials very attractive for potential power generation considerations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318237
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  • 3
    Electronic Resource
    Electronic Resource
    A randomised controlled trial of intravenous versus inhalational analgesia during outpatient oocyte recovery (2000)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 55 (2000), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To compare the efficacy and acceptability of conventional intravenous sedation with patient-controlled inhalational isodesox, 57 women undergoing outpatient oocyte recovery were randomly allocated to receive isodesox by face mask, while 55 women were given intravenous fentanyl and midazolam. Women's satisfaction with pain relief, peroperative pain, clouding of memory and the surgeons' assessment of operating conditions were evaluated. Thirty-eight women in the inhalation group (67%) and 41 (75%) women in the intravenous group were ‘very satisfied’ with their analgesia (p = 0.41). The mean (SD) pain score in women given isodesox was 46.8 (34.7), while in the intravenous group it was 34.1 (21.3) (p = 0.02). Oxygen saturation levels 〈 94% were recorded in one woman using isodesox and in 16 (29%) women given intravenous analgesia. Despite higher pain scores, in comparison with the conventional analgesia, patient-controlled isodesox offers a safer method of pain relief with comparable satisfaction rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2000.01468.x
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamic instabilities and memory effects in vortex matter (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 403 (2000), S. 398-401 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The magnetic flux line lattice in type II superconductors serves as a useful system in which to study condensed matter flow, as its dynamic properties are tunable. Recent studies have shown a number of puzzling phenomena associated with vortex motion, including: low-frequency noise and slow ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35000145
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  • 5
    Electronic Resource
    Electronic Resource
    Level structure of odd-odd 68Ga (2000)
    Springer
    The European physical journal 9 (2000), S. 197-200 
    Details
    ISSN: 1434-601X
    Keywords: PACS. 27.50.+e 59 ≤A≤ 89 – 23.20.Lv Gamma transitions and level energies – 23.20.En Angular distribution and correlation measurements
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Excited states of 68Ga have been investigated through the 55Mn(16O, 2pn) reaction at projectile energy 55 MeV. The level scheme has been extended up to 7.8 MeV. Altogether six new excited levels could be identified and twelve previously unobserved γ-transitions have been placed in the modified level scheme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500070037
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  • 6
    Electronic Resource
    Electronic Resource
    MRI of the intraorbital optic nerve in patients with autosomal dominant optic atrophy (2000)
    Springer
    Neuroradiology 42 (2000), S. 180-183 
    Details
    ISSN: 1432-1920
    Keywords: Key words Magnetic resonance imaging ; Nerve, optic ; Optic atrophy, dominant
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Measurements of the intraorbital optic nerve were made using high-resolution coronal MRI in 10 adults with autosomal dominant optic atrophy. Comparisons were made with previous studies of 10 normal adult subjects. The cross-sectional diameters of the optic nerve and the perineural subarachnoid space were measured and a ratio of there diameters at anterior, mid and posterior positions along the optic nerve was determined. We found a statistically significant difference in the mean optic nerve: sheath ratio between the control group and patients with autosomal dominant optic atrophy. At anterior, mid and posterior locations along the optic nerve it is significantly smaller in patients with optic atrophy. We have demonstrated that the loss of ganglion cells, previously documented in dominant optic atrophy, is associated with a significant loss of optic nerve tissue and thinning of the nerve along its length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002340050041
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  • 7
    Electronic Resource
    Electronic Resource
    PWB compatible high value integral capacitors by MOCVD (2000)
    Springer
    Journal of materials science 11 (2000), S. 657-660 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The 1998 National Electronics Manufacturing Technology Roadmap indicates that a capacitance density of ∼50 nF cm−2 will be required in 2001 for successful implementation of integral passive technology in the microelectronics packaging industries. Higher permittivity polymer/ceramic nanocomposites have been proven to be a viable option for integral capacitors on printed wiring boards (PWB). Although the nanocomposite materials are in their developmental stage, it is unlikely that this materials system could meet such high capacitance needs and still utilize a large area manufacturable process. In this study, an alternative metal organic chemical vapor deposition (MOCVD) technique has been implemented to deposit TiO2 thin film dielectrics at temperatures below 180 °C with higher capacitance densities. Two different metal-dielectric-metal type parallel plate capacitor structures have been fabricated on silicon and PWB substrates for relatively high frequency (45 MHz–1 GHz) and low frequency (100 Hz–1 MHz) characterization. Copper was used as the ground and upper electrodes with a 10 nm Cr adhesion layer between the dielectric and the electrodes. Capacitance was measured using a Keithley LCZ meter and a HP4194 impedance gain-phase analzer at the lower frequency range. Specific capacitance as high as 200 nF cm−2 was achieved at 1 MHz from devices built on silicon substrates and at 100 kHz from devices on PWB substrates. For the first time, thin film TiO2 on PWB substrates is reported at temperatures below 180 °C using MOCVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008910306266
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of the maximum specific growth rate of a yeast indicating non-linear growth trends in batch culture (2000)
    Springer
    World journal of microbiology and biotechnology 16 (2000), S. 613-616 
    Details
    ISSN: 1573-0972
    Keywords: Absolute error ; specific growth rate ; yeast
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract The maximum specific growth rate (μmax) of an ethanolic D-xylose-fermenting yeast, Pichia stipitis, showing non-linear growth trends in batch culture, was calculated using the rate equation μ2 = (1/Δt) ln(x 2/x 1). The absolute error Δμ, affecting μ2, was derived using an equation given by Borzani (1994). Based on the assumption of linearity of growth curves between two closest time points, the relation between the two rate formulae, μ1 = (1/x¯)dx t /dt and μ2 = (1/Δt) ln(x 2/x 1) was established. In a particular condition, when μ1 = μ2, an equation has been developed, the roots of which are the specific growth rates at different time points.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008980317225
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  • 9
    Electronic Resource
    Electronic Resource
    Dissipative dynamics of fission in the framework of asymptotic expansion of Fokker-Planck equation (2000)
    Springer
    The European physical journal 7 (2000), S. 209-217 
    Details
    ISSN: 1434-601X
    Keywords: PACS: 25.70.Jj Fusion and fusion-fission reaction – 25.70.Gh Compound nucleus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: The dynamics of fission has been formulated by generalising the asymptotic expansion of the Fokker-Planck equation in terms of the strength of the fluctuations where the diffusion coefficients depend on the stochastic variables explicitly. The prescission neutron multiplicities and mean kinetic energies of the evaporated neutrons have been calculated and compared with the respective experimental data over a wide range of excitation energy and compound nuclear mass. The mean and the variance of the total kinetic energies of the fission fragments have been calculated and compared with the experimental values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100500050383
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  • 10
    Electronic Resource
    Electronic Resource
    A low temperature processable ternary gallium alloy for via filling application in microelectronic packaging (2000)
    Springer
    Journal of materials science 11 (2000), S. 653-656 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A low temperature processable ternary gallium alloy is formulated using an appropriate mixture of liquid gallium metal with nickel and copper powders. The processability of this alloy for room temperature via filling application is demonstrated using a stencil print process. A test vehicle is fabricated using a 0.2 mm thick and 300 mm×300 mm stainless steel (SS) panel with laser-drilled vias. Parylene N is deposited on the SS panel and around the inside via walls in order to electrically isolate via filling material from the body of the SS substrate and also making the SS surface non-conductive. Filled vias were examined for electrical isolation from neighboring vias and for electrical continuity in the thickness direction. Results show that the ternary gallium alloy is a good via filling material and can be applied to vias as small as 0.25 mm. It is believed that this novel alloy can also be used for thin film process on related MCM-L (multichip module-laminate) substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008901422196
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