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  • 2000-2004  (18)
  • 2003  (3)
  • 2001  (15)
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  • 2000-2004  (18)
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  • 1
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    Design of Polymer Processes Using the Coupling of Commercial Simulation Packages Polymers Plus and PREDICI (2001)
    Details
    Publication Date: 2020-03-20
    Language: English
    Type: article , doc-type:article
    Library Location Call Number Volume/Issue/Year Availability
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    OPUS
  • 2
    Electronic Resource
    Electronic Resource
    Beam of metastable krypton atoms extracted from a rf-driven discharge (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 271-272 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A rf-driven discharge is used to produce a beam of metastable krypton atoms at the 5s(3/2)2 level with an angular flux density of 4×1014 s−1 sr−1 and most probable velocity of 290 m/s, while consuming 7×1016 krypton atoms/s. When operated in a gas-recirculation mode, the source consumes 2×1015 krypton atoms/s with the same atomic-beam output. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328400
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance enhancement in spin valves with nano-oxide layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6928-6930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 °C annealing. The MR ratio is further increased after annealing at temperatures below 200 °C. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 °C. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356717
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    AlxGa1−xN/GaN band offsets determined by deep-level emission (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1887-1890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present studies of the compositional dependence of the optical properties of AlxGa1−xN(0〈x〈0.22) alloys by modulation spectroscopy and photoluminescence. The yellow luminescence, which is well known in GaN and is generally assigned to shallow donor–deep acceptor pair recombination has also been observed in AlxGa1−xN. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in AlxGa1−xN/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al0.14Ga0.86N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1383259
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    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3725-3729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β], (0〈β〈1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350416
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Fourth order gradient symplectic integrator methods for solving the time-dependent Schrödinger equation (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 7338-7341 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We show that the method of splitting the operator eε(T+V) to fourth order with purely positive coefficients produces excellent algorithms for solving the time-dependent Schrödinger equation. These algorithms require knowing the potential and the gradient of the potential. One fourth order algorithm only requires four fast Fourier transformations per iteration. In a one dimensional scattering problem, the fourth order error coefficients of these new algorithms are roughly 500 times smaller than fourth order algorithms with negative coefficient, such as those based on the traditional Forest–Ruth symplectic integrator. These algorithms can produce converged results of conventional second or fourth order algorithms using time steps 5 to 10 times as large. Iterating these positive coefficient algorithms to sixth order also produced better converged algorithms than iterating the Forest–Ruth algorithm to sixth order or using Yoshida's sixth order algorithm A directly. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362288
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    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Equilibrium and stability properties of self-organized electron spiral toroids (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4441-4449 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A cold-fluid model for a self-organized electron spiral toroid (EST) is presented. In the present model, the electrons are assumed to undergo energetic spiral motion along a hollow torus with a fixed ion background, the electron mean free path is assumed to be long compared with the torus size, and the minor radius of the EST is assumed to be small compared with the major radius. Using this model, the equilibrium and stability properties of the electron flow in the self-organized EST are analyzed. It is found that a class of self-organized EST equilibria exists with or without an externally applied toroidal magnetic field. It is shown that in the absence of any applied toroidal magnetic field, the EST equilibria are stable at high electron densities (i.e., at high toroidal self-magnetic fields), although they are unstable at low electron densities (i.e., at low toroidal self-magnetic fields). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400792
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    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Mechanism of photoluminescence in GaN/Al0.2Ga0.8N superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3806-3808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present photoluminescence (PL) and time-resolved photoluminescence measurements in GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. We found that the carrier confinement of our samples is better than most of the previous reports. The dependence of the PL emission energy and intensity on temperature, in the low temperature regime, is consistent with recombination mechanisms involving localized states attributed to a small degree of interface fluctuations. Picosecond time-resolved photoluminescence spectroscopy has been employed to probe the well-width dependence of the lifetime of these superlattices. We see that the recombination lifetime increases with the decrease of well width. This behavior can be interpreted by the fact that the effect of localization keeping carriers away from nonradiative pathways can be enhanced by a decrease in the well width. This explanation is consistent with the temperature-dependent PL data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420495
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of initial states on the phase diagram of the structural pattern in magnetic fluid films under perpendicular magnetic field (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2360-2362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When a magnetic fluid thin film is subjected to a magnetic field perpendicular to the plane of the film, a portion of magnetic particles is condensed out from the initially monodispersed magnetic fluid and forms magnetic columns. These columns evolve from a disordered column phase to a two-dimensional ordered structural pattern as the field strength reaches some critical value, Hh. The structural pattern formative process of the ordered structures that follows depends on the condition of the disordered column phase. In the letter, the effect of the initial disordered column phase, which can be altered by changing the initial field strength, Hi, on the formative process of the ordered structures is studied, and a phase diagram on the H–Hi plane is constructed. With an initial field strength that exceeds Hh, the structural pattern formative process goes through a plateau, a transition phase, and another plateau. On the other hand, if the initial field strength is less than Hh, the columns in the disordered column phase split and new columns emerge in the magnetic fluid film as the field strength increases. Finally, the structural pattern reaches a plateau. In both processes, the distance between columns in the structural patterns converges to that of a pseudostatic case. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409272
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Programmable organic light-emitting devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3023-3025 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a promising type of electrically programmable, i.e., reconfigurable, organic light-emitting devices (OLEDs) incorporating a thin carrier-blocking layer as the sacrificial fusing layer. In such devices, the carrier-blocking layer has a lower glass transition temperature than neighboring layers. By raising the internal temperature of the device above the transition temperature of the carrier-blocking layer with a large enough current, interdiffusion between organic layers could occur through such a layer. As a consequence, neighboring layers are fused and a new path for carrier transport is formed, bypassing the carrier-blocking property and altering the device characteristics. A device that emits blue light as fabricated but can be transformed into a green-emitting one is demonstrated. Such a type of device may be used for color pixels in OLED displays, user-programmable OLED applications, and nonvolatile memory devices.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1414305
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    Paper (German National Licenses)
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