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  • 2005-2009
  • 2000-2004  (8)
  • 1970-1974
  • 2002  (8)
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  • 2005-2009
  • 2000-2004  (8)
  • 1970-1974
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  • 1
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High harmonics generated due to the scattering of relativistic electrons from high intensity laser light is studied. The experiments are carried out with an Nd:Glass laser system with a peak intensity of 2×1018 W cm−2 in underdense plasma. It is shown that, at high intensities, when the normalized electric field approaches unity, in addition to the conventional atomic harmonics from bound electrons there is significant contribution to the harmonic spectrum from free electrons. The characteristic signatures of this are found to be the emission of even order harmonics, linear dependence on the electron density, significant amount of harmonics even with circular polarization and a much smaller spatial region over which these harmonics are produced as compared to the atomic case. Imaging of the harmonic beam shows that it is emitted in a narrow cone with a divergence of 2 to 3 degrees. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 540-542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report x-ray reflectivity and secondary ion mass spectrometry (SIMS) analysis of several silicon oxynitride films of 4.0 nm thick as a function of nitrogen concentration at the interface between the oxide and the Si substrate. The x-ray reflectivity data have been analyzed using a model-dependent matrix method, and the results were compared with the model-independent method based on the distorted wave Born approximation and Fourier inversion refinement technique based on the Born approximation. Limitation of each of these techniques is also discussed. The x-ray reflectivity analysis of the films reveals the existence of high electron density at the region where nitrogen accumulation has been observed. Nitrogen accumulation has been observed using dual-beam time-of-flight-SIMS. The results of x-ray reflectivity have been compared with the results of SIMS. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3075-3077 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin SiO2 film was thermally grown on Si(001) substrate by dry oxidation and wet oxidation processes. The films were then subjected to thermal annealing (TA) at 1000 °C for 30 min. The structural characterization of the as-grown and the TA samples was carried out using the grazing incidence x-ray reflectivity technique. The analysis of the x-ray reflectivity data was carried out by using a model independent formalism based on the distorted wave Born approximation for obtaining the electron density profile (EDP) of the film as a function of depth. The EDP of both films show a decrease in the electron density as well as an increase in their thickness when the films are subjected to TA. It has also been observed that the total number of electrons is conserved in the oxide film after TA. Our analysis of the x-ray reflectivity data indicates that the SiO2 film swells and its interface with the substrate modifies upon TA. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 512-514 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of plasma treatment on TiN films in N2/H2 atmosphere grown by chemical vapor deposition. The physical parameters and chemical evolution of the film as a function of duration of plasma treatment was studied using grazing incidence x-ray reflectivity (GIXR). From the analysis of GIXR we obtained the electron density profile of the film as a function of its depth. The GIXR data were analyzed using matrix method and distorted wave Born approximation scheme. Comparison of both the analysis schemes gives proper interpretation of the parameters obtained. The results obtained from the analysis of x-ray reflectivity data are supported by time of flight secondary ion mass spectroscopy depth profiling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1773-1775 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe p-metal–oxide–silicon field-effect transistors (p-MOSFETs) were fabricated with ultrathin thin (∼20 Å) remote plasma chemical vapor deposition gate oxides deposited directly on SiGe. A low temperature water vapor annealing was used to improve the SiO2/SiGe interface and performance of SiGe p-MOSFETs. After the wet annealing, dangling Si and Ge bonds at the interface are passivated by atomic hydrogen, the threshold voltage of SiGe p-MOSFETs decreases from −0.39 to −0.20 V, the subthreshold slope from 117 to 87 mV/dec, and more than 20% output current enhancement is observed in these SiGe p-MOSFETs compared with Si control devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A study of eleven cutaneous malignant melanomas in adults with small-cell morphology: emphasis on diagnostic difficulties and unusual features Aims: To describe the clinicopathological and immunohistochemical features of cutaneous malignant melanomas with a pure or mixed small-cell pattern in 11 adult patients, and to discuss the diagnostic difficulties encountered. Methods and results: Haematoxylin and eosin-stained sections of each case of cutaneous small-cell malignant melanoma, together with locally recurrent skin lesions and, where available, metastatic deposits, were re-examined. Available immunohistochemical sections were evaluated. Clinical follow-up data were obtained in each case. One patient presented with metastatic disease, the others presented with cutaneous lesions. Suggested initial diagnoses included malignant melanoma, non-Hodgkin's lymphoma, Merkel cell carcinoma and sarcoma. All the tumours were in the vertical growth phase. Nine had a junctional component, often inconspicuous. The lesions showed either a pure small-cell pattern or a mixed pattern with more conventional areas. In one case, there was colonization of a basal cell carcinoma by invasive malignant melanoma. Variable retention of small-cell morphology in local recurrences and metastases was observed, although in some cases more typically pleomorphic cells were present. In the cases tested, there was strong immunostaining for S100 protein and NKI-C3, and variable immunostaining for HMB45 and Melan-A. Non-melanocytic markers were negative. Conclusions: The possibility of a small-cell malignant melanoma should be considered in the assessment of cutaneous and non-cutaneous small-cell neoplasms. The correct diagnosis requires careful evaluation for junctional activity, melanin production and the use of a panel of melanocytic markers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 389-393 (Apr. 2002), p. 1041-1044 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 389-393 (Apr. 2002), p. 1089-1092 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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