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  • 1
    Electronic Resource
    Electronic Resource
    Improvement of microwave ion source for higher B+ ion current : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 713-715 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Microwave ion sources have many advantages over dc-discharge ion sources, such as long lifetime and high current for most ion species. But B+ ion current has been the only disadvantage. Here we experimentally study how to get higher B+ ion current by optimizing the shape and volume of the source chamber as well as by increasing the secondary electron emissivity of the chamber wall. We carry out the experiment with regard to the maximum ion beam, lifetime, and dynamic range of the beam current for various ion species. Then, we compare the data with those of the Bernas-type ion source that has been widely used in semiconductor manufacturing factories. As a result of the improvement, the performance of all the above-mentioned aspects of the microwave ion source exceed those of the Bernas-type ion source. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150270
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  • 2
    Electronic Resource
    Electronic Resource
    Large-area ion source combining microwaves with inductively coupled plasma : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 716-718 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The semiconductor industry is growing rapidly and requires high technologies for nano-structure devices. Ion sources for manufacturing the next-generation semiconductor devices have been studied from the viewpoint of applications to material processing, such as ion beam assisted deposition, ion beam etching, and ion implantation. Recently, large-area ion sources which extract broad ion beams with multiapertures have come to be required not only for processing the size-growing wafers but also for industrial applications to nonsemiconductor materials. However, the uniformity of plasma density over the multiaperture electrodes has not met the requirements yet. We suggest a new method to improve the uniformity by superposing microwaves to an inductively coupled plasma source. Distributions of ion species in the plasma are measured with a quadrupole mass spectrometer which can be moved in vacuum perpendicularly to the beam extraction. The distributions of both plasma density and ion species in the source plasma as well as their properties over a large area are being studied and discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150271
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  • 3
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline FeRuGaSi-Hf alloy films and head characteristics for the embedded thin film tape head : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5907-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362168
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  • 4
    Electronic Resource
    Electronic Resource
    Recording performance of the combination of magnetoresistive head and thin metal evaporated tape : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4527-4529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metal evaporated (ME) tape with low remanence-thickness product (Mrδ), high coercivity (Hc) and low noise was designed to match a magnetoresistive (MR) head. This article focuses on the high density recording performance of a shielded MR head/thin ME tape media designed for use with an MR head. The PW50 measurement was adopted to certify that the depth of recording was restricted by magnetic layer thickness. Reduced second harmonic distortion at low density shows saturation-free operation of the MR head. Frequency domain measurements indicate drastically reduced ac erase noise level and higher output level at short wave length. High readback density (neglecting intertrack interference) of 1.07 Gbits/in2 with signal-to-noise ratio (SNR) after equalization of 18.7 dB was attained for a FeNi (AMR) head and 1.29 Gbits/in.2 with SNR of 20.0 dB for a spin-valve (GMR) head. The performance of the MR head/thin ME tape system was compared to commercial ME tape and thin metal particulate tape in terms of noise characteristics, depth of recording, and SNR after equalization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364941
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  • 5
    Electronic Resource
    Electronic Resource
    Junction properties of homoepitaxial diamond films grown by step–flow mode (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6095-6099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial diamond films with atomically flat surface were reproducibly grown by step–flow mode under the condition of less than 0.1% CH4/H2. Using these diamond films, high-quality Schottky junctions between Al and high-conductivity layer near the surface of the films have been successfully made. At 400 K, the ideality factor and the barrier height of the Schottky junctions, which are defined by the conventional junction theory, estimated from the current–voltage (I–V) characteristics are about 1.1 and 1.5–1.6 eV, respectively. Under the condition of more than 0.1% CH4/H2, however, many unepitaxial crystallites (UC) and pyramidal hillocks (PH) are often formed on the surface of the films which are even mainly grown by the step–flow mode. The Schottky junction properties become worse with an increase in the density of UC and PH. In particular, the increase in the saturation current, which was obtained by extrapolating the straight line to V=0 in a plot of ln I against V, correlated with Schottky barrier height is more sensitive than that of the ideality factor to the density of UC and PH. It is concluded that diamond films grown by the step–flow mode without UC and PH is essential to obtain an ideal Schottky junction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368922
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  • 6
    Electronic Resource
    Electronic Resource
    Low resistance magnetic tunnel junctions and their interface structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7558-7560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of interface structure and oxidation state were studied in stacked magnetic tunnel junction (MTJ) structures with top and bottom antiferromagnetic layers to obtain optimum resistance and high tunneling magnetoresistance (TMR) ratios for read heads. The roughness of the NiFe surface and the Al coverage were significantly improved by introduction of O2 surfactant gas on the Ta-seed-layer surface, which increased TMR ratios of the MTJ with low resistance area (RA) products of less than 10 Ω μm2. Furthermore, it was found that avoidance of Ni oxidation and Co oxidation at the tunnel barrier interface is essential to obtaining high TMR ratios, and that a good Al coverage and Fe–oxide formation may enhance TMR ratios when Fe-rich magnetic materials are used. For the top-type and bottom-type structures, a TMR ratio of 12%–17% with RA products of 6–7 Ω μm2 was obtained, which provides sufficient performance for read heads. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361054
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  • 7
    Electronic Resource
    Electronic Resource
    Exact energy values of "low-energy ion beams'' : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1218-1220 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ion beams with energies of several tens of electron volts are used for forming special films with excellent physical and chemical properties by ion-beam deposition. Although the ion energy values are considered very important for controlling physical and chemical characteristics of the deposited films, most reported values for such film formation have been considerably inaccurate since they have been given simply by multiplying the power supply voltages to the discharge chambers with electron charge e. In practice, the plasma potential at which ions are generated is several to several tens of volts higher than the discharge chamber, so that the real beam energy is that much higher. Although the excess energy originating from the plasma floating potential has been negligible for usual high-energy ion implantation, it cannot be neglected for ion-beam deposition where low-energy ion beams below 100 eV are used. In this article it is indicated that knowing electron temperatures of plasmas is necessary to get the exact energy values of low-energy ion beams. Thus, it is also clarified that ion energy spreads of usual ion beams may be caused by possible fluctuation of the electron temperatures as well as by thermal motion of ions in the plasma. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146737
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  • 8
    Electronic Resource
    Electronic Resource
    Linearity of unshielded spin-valve sensors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Linearity of the magnetoresistive (MR) transfer curve for an unshielded spin-valve (SV) sensor was studied. When the NiFe free layer thickness is greater than 5.0 nm, the anisotropic magnetoresistive (AMR) effect in it may overlap the giant magnetoresistive effect of the SV structure and deteriorate the linearity of the sensor response. By using a bilayer of NiFe/NiFeTa as the free layer for suppressing the AMR effect, superior linearity was obtained without a loss of the MR ratio. This new SV structure shows 5.0% as the MR ratio and −32.1 dB as second harmonic distortion, compared to −19.5 dB for a conventional one. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118313
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  • 9
    Electronic Resource
    Electronic Resource
    Azimuthal rotation of diamond crystals epitaxially nucleated on silicon {001} (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1491-1492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented diamond films with {001} facets were grown on Si{001} using microwave plasma enhanced chemical vapor deposition. The tilt and rotation of the diamond crystals were measured by polar x-ray diffraction. The full widths at half-maximum of {004} and {220} diffraction peaks were 5° and 10°, respectively. It was found that the {220} diffraction poles split into two peaks by approximately 5°. This result indicated that there were two possible azimuthal rotations about the surface normal of the substrate for the epitaxially nucleated diamond grains. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116264
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of HAART on hepatitis C, hepatitis G, and TT virus in multiply coinfected HIV-positive patients with haemophilia (2001)
    Oxford UK : Blackwell Science Ltd
    Haemophilia 7 (2001), S. 0 
    Details
    ISSN: 1365-2516
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In multiply coinfected human immunodeficiency virus (HIV)-positive patients, we investigated the effects of high-activity antiretroviral therapy (HAART) using HIV protease inhibitors on three other viruses: hepatitis C virus (HCV), hepatitis G virus (HGV), and TT virus (TTV). Viral concentrations were measured serially by polymerase chain reaction methods in five patients with quadruple infection (HIV, HCV, HGV, and TTV) and in two patients with triple infection (HIV, HCV, and HGV) before and during HAART. In addition, CD4+ cell counts and serum alanine aminotransferase (ALT) levels were measured serially. Generally we observed no difference in serum HCV RNA, HGV RNA, or TTV DNA concentrations between samples obtained before and after initiation of HAART, whereas HIV RNA concentration decreased and CD4 counts increased in most patients. However, two patients had markedly decreased concentrations of HCV RNA and HGV RNA, respectively, more than 12 months after beginning HAART. Normalization of serum ALT levels was observed in a patient with decline of HCV RNA concentrations. No interactions were observed among these four viruses. HAART had no apparent direct effects on HCV, HGV, or TTV. Further studies will be required to elucidate whether the restoration of immune status through suppression of HIV replication by HAART may affect HCV or HGV RNA concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2516.2001.00567.x
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