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  • 2005-2009  (1)
  • 2000-2004  (29)
  • 1985-1989  (37)
  • 1
    Electronic Resource
    Electronic Resource
    Electrostatic fluctuations in the Current Sustained Torus IV at Nagoya University (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2449-2455 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed experimental investigation of plasma fluctuation and its modification due to radial electric field effects, both its shear and curvature, has been carried out on the Current Sustained Torus IV at Nagoya University [Takamura et al., J. Plasma Fusion Res. 74, 38 (1998)] through measurement with an array of Langmuir probes. The observed statistical dispersion relation indicates a drift-wave-type turbulence. An examination of the radial electric field shear and curvature effects on the fluctuations as well as comparisons to theoretical predictions are presented. The decorrelation of turbulence is found to be influenced by the radial electric field shear in our experiment. A modification of the poloidal correlation length and the two-poloidal-point coherency due to the radial electric field has also been identified. Nonlinear analysis of quadratic mode coupling indicates that the radial electric field can affect the fluctuation amplitudes by modifying the coupling between different spectral components of the fluctuations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874084
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  • 2
    Electronic Resource
    Electronic Resource
    Frequency dependence of tokamak plasma response to the externally applied rotating helical field (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3288-3300 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequency dependence of the tokamak plasma response to the externally applied rotating helical field was investigated by measuring the radial profile of the perturbation field with small magnetic probes which were inserted in the plasma. The experimental results are discussed, directly comparing with the generally accepted linear theory, and taking into account the E×B drift and diamagnetic effect of the plasma. It was found that the experimental results are in good agreement with the simple linear analysis based on the single helicity approximation in a cylindrical geometry, except for the ergodic region, which comes from the overlapping of several sideband components of the perturbation. It is also found that the radial component of the perturbation field is still amplified inside the resonance surface (r〈rs), even when a partial shielding takes place at r(approximate)rs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874194
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic properties of Co–P powders produced by chemical reduction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7209-7212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co–P powders were produced by chemical reduction. The powders had a spherical shape with an average diameter of about 1 μm. X-ray diffraction and differential scanning calorimetry studies confirmed that the powders were amorphous. The amorphous powders showed higher saturation magnetization than the crystalline counterparts. Heat treatment of the powders above the crystallization temperature resulted in the formation of fcc Co, hcp Co, and Co2P phases. The saturation magnetization of the annealed powders monotonically decreased as the annealing temperature increased. On the other hand, the coercivity of the annealed powders rapidly increased with increasing annealing temperature. The powders annealed at 600 °C had a saturation magnetization of 100 emu/g with a coercivity of 500 Oe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327290
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  • 4
    Electronic Resource
    Electronic Resource
    Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1359-1361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance-voltage (C-V) and the current-voltage characteristics of metal/ZnSe/p-GaAs capacitors have been investigated; both epitaxial layers were grown by molecular beam epitaxy. In the capacitor structures highly resistive, stoichiometric ZnSe functioned as the pseudoinsulator on the doped GaAs layers. The capacitance-voltage measurements demonstrated that the capacitors could be biased from accumulation through depletion, and into deep depletion, with current in the range of 10−8 A cm−2. Very little frequency dispersion was observed in the C-V data when measured from 1 kHz to 1 MHz. From the high-frequency C-V curve, the surface state density as a function of position in the GaAs band gap was determined. Surface state densities were comparable to densities reported for (Al,Ga)As/GaAs heterojunctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100715
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  • 5
    Electronic Resource
    Electronic Resource
    Zinc-blende MnTe: Epilayers and quantum well structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2087-2089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102091
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  • 6
    Electronic Resource
    Electronic Resource
    Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 268-270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101925
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  • 7
    Electronic Resource
    Electronic Resource
    Improvements in corrosion resistance of Tb-Fe thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 510-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrochemical corrosion of Tb-Fe films was studied by immersion in a NaCl solution. The corrosion resistance was improved by adding Al, Cr, Hf, Mo, and/or Ti to Tb-Fe. The improvement mechanism, which was studied by transmittance change measuring, microscopic observation, and electron probe microanalysis, is the concentration of the additive metals and formation of passive states by the metals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99401
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  • 8
    Electronic Resource
    Electronic Resource
    Erasable optical memory media with thermoplastic/absorbent double layer (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1777-1778 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermoplastic/absorbent double layer type optical memory was developed. The thermoplastic was monodispersed polystyrene of which the molecular weight was 800–110 000, and the absorbent was Cu phthalocyanine. The erasing properties were dependent on the molecular weight. The medium was best when the molecular weight was 2000 and the record/erase repetition could be more than 350. The dye addition to the polystyrene increased the recording sensitivity but decreased the maximum limit of record/erase repetition, so the dye content was preferable to be less than 10 wt. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99623
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray scattering from poly(thiophene): crystallinity and crystallographic structure (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 1972-1977 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00152a028
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  • 10
    Electronic Resource
    Electronic Resource
    Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3656-3660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344077
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