ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High-purity, semi-insulating 6H-SiC substrates grown by high-temperature chemical vapordeposition were studied by electron paramagnetic resonance (EPR). The carbon vacancy (VC), thecarbon vacancy-antisite pair (VCCSi) and the divacancy (VCVSi) were found to be prominent defects.The (+|0) level of VC in 6H-SiC is estimated by photoexcitation EPR (photo-EPR) to be at ~ 1.47 eVabove the valence band. The thermal activation energies as determined from the temperaturedependence of the resistivity, Ea~0.6-0.7 eV and ~1.0-1.2 eV, were observed for two sets of samplesand were suggested to be related to acceptor levels of VC, VCCSi and VCVSi. The annealing behavior ofthe intrinsic defects and the stability of the SI properties were studied up to 1600°C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.381.pdf
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