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  • 2005-2009  (13)
  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Site-competition epitaxy for superior silicon carbide electronics (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1659-1661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site-competition epitaxy is presented for the chemical vapor deposition of 6H-SiC epilayers on commercially available (0001)SiC silicon-face substrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112947
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2730-2732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The D-center in 6H-SiC is a boron-related deep hole trap observed previously in LPE-grown 6H-SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D-center signature is observed in high-purity n- and p-type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10−14 cm2 and 3×10−14 cm2 was determined for this level. Even though the D-center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n-type layer than in the p-type layer, which is explained by a recently proposed site competition model for impurity doping during 6H-SiC CVD growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111457
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1386-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H-SiC p+n junction diodes were fabricated in 6H-SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H-SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111915
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1199-1202 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports on initial results from the first device tested of a “second generation”Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiCwebbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With properselection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20ppm was achieved. A stable sensor current gain of 125 ± 11 standard deviation was demonstratedduring 250 hours of cyclic test exposures to 0.5% H2 and N2/air
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1199.pdf
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1335-1338 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper reports on initial fabrication and electrical characterization of 3C-SiC p+njunction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping rangingfrom ~ 2 x 1016 cm-3 to ~ 5 x 1017 cm-3 were fabricated and tested. No optimization of junction edgetermination or ohmic contacts was employed. Room temperature reverse characteristics of the bestdevices show excellent low-leakage behavior, below previous 3C-SiC devices produced by othergrowth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdownfield of 3C-SiC is at least twice the breakdown field of silicon, but is only around half thebreakdown field of 〈0001〉 4H-SiC for the doping range studied. Initial high current stressing of 3Cdiodes at 100 A/cm2 for more than 20 hours resulted in less than 50 mV change in ~ 3 V forwardvoltage
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1335.pdf
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 223-226 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grownatop on-axis 4H-SiC mesa substrate arrays [1,2]. Using an optical emission microscope (OEM), wehave investigated these diodes under forward bias, particularly including defective 3C-SiC filmswith in-grown stacking faults (SFs) nucleated on 4H-SiC mesas with steps from screw dislocations.Bright linear features are observed along 〈110〉 directions in electroluminescence (EL) images.These features have been further investigated using electron channeling contrast imaging (ECCI)[3]. The general characteristics of the ECCI images—together with the bright to dark contrastreversal with variations of the excitation error—strongly suggest that the bright linear features arepartial dislocations bounding triangular SFs in the 3C-SiC films. However, unlike partialdislocations in 4H-SiC diodes whose recombination-enhanced dislocation motion serves to expandSF regions, all the partial dislocations we observed during the electrical stressing were immobileacross a wide range of current injection levels (1 to 1000 A/cm2)
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.223.pdf
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC Mesas (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 483-485 (May 2005), p. 753-756 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper presents new observations resulting from in-situ high temperature hydrogen etching of 4H-SiC mesas that were step-free prior to initiation of etching. In particular, it was found that well-ordered pyramidal-shaped step train structures could be produced on mesa top surfaces via stepflow etching proceeding inward from the sides of mesas. In many cases, the height of steps etched inward from {112 0} mesa sides is 0.5 nm (2 Si-C bilayers), while the height of steps etched inward from {11 00} sides of the same mesa is 1.0 nm (4 Si-C bilayers, the repeat distance of the 4H-SiC polytype). We propose that stepflow etching starting from the mesa sidewall and involving step-to-step repulsive forces produces the observed step train structures
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.753.pdf
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 247-250 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report on further observations of homoepitaxially grown 4H silicon carbide (SiC)cantilevers on commercial on-axis mesa patterned substrates. Mesa shapes with hollow interiorswere designed to significantly increase the ratio of dislocation-free cantilever area to pregrowthmesa area. Mesas that did not contain axial screw dislocations (SD’s) continued to expand laterallyuntil uncontrolled growth in the trench regions rises up to interfere / merge with the laterallyexpanding cantilevers. Molten KOH etching revealed high defect density in regions where trenchgrowth merged with the laterally expanding cantilevers. The remaining portions of the cantilevers,except for central coalescence points, remained free of dislocations
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.247.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 279-282 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Cross-sectional transmission electron microscopy (TEM) was used to investigate theextended defects in 3C-SiC films deposited on atomically flat 4H-SiC mesas. The nominal layerthickness was 10 μm and was considerably larger than the critical thickness determined by either theMatthews and Blakeslee or People and Bean models. Threading dislocation densities determined byKOH etching are far below densities typical of relaxed heteroepitaxial layers, down to as low as104cm-2 densities found in 4H-SiC. Misfit dislocations with Burgers vectors of 〈11 2 0〉 wereobserved in planes parallel to the 3C/4H SiC interface. These defects were interpreted as due tonucleation of dislocation half loops at mesa edges and glide along the 3C/4H interface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.279.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 831-834 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: While there have been numerous reports of short-term transistor operation at 500 °C orabove, these devices have previously not demonstrated sufficient long-term operational durability at500 °C to be considered viable for most envisioned applications. This paper reports thedevelopment of SiC field effect transistors capable of long-term electrical operation at 500 °C. A6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current(IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the durationof the biased 500 °C test. Another high-temperature packaged 6H-SiC MESFET was employed toform a simple one-stage high-temperature low-frequency voltage amplifier. This single-stagecommon-source amplifier demonstrated stable continuous electrical operation (negligible changes togain and operating biases) for over 600 hours while residing in a 500 °C air ambient oven. In bothcases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominanttransistor degradation mechanism that limited the duration of 500 °C electrical operation
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.831.pdf
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