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Digitale Medien

Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy (1987)

Chen, S. H. ; Carter, C. B. ; Enquist, P.

Springer

Applied physics 44 (1987), S. 143-151

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Details

ISSN: 1432-0630

Schlagwort(e): 68.55Jh ; 81.30Fb ; 68.35

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the nearsurface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00626415

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