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  • 2005-2009  (17)
  • 1985-1989  (22)
  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK; Malden, USA : Blackwell Publishing Ltd/Inc.
    Wound repair and regeneration 13 (2005), S. 0 
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Despite the use of antibiotics, antiseptics, and improved sterile techniques, infection remains one of the most frequent complications of wound healing. Infection must be avoided to permit proper wound healing. Systemic and topical antibiotics and antiseptics with broad antimicrobial spectra have been used. Antiseptics have not generally been reported to develop bacterial resistance like antibiotics. Several reports have suggested that antiseptics exhibit significant cytotoxicity toward wound bed cells and may interfere with the normal wound healing process. Thus, for chronic ulcers, the standard of care is debridment and moist dressing with saline.We will describe the properties of a new topical antimicrobial solution, NVC-101. These include its broad-spectrum antimicrobial activities against gram positive, gram negative bacteria, yeast and fungi pathogens, and its lower toxicity as compared to commonly used topical antiseptics. In addition, we will describe the in vivo safety profile of NVC-101 in the rabbit eye and guinea pig sensitization models, as well as 28-day application to full thickness wounds in rats and mini-pigs. Based on these findings, multicenter Phase II clinical trials on infected chronic ulcers are under way.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2494-2496 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Prethinned polycrystalline Ge TEM samples were irradiated with 1.5 MeV Kr+ ions at room temperature while structural and morphological changes were observed in situ in the Argonne High Voltage Electron Microscope-Tandem Facility. After a Kr+ dose of 1.2×1014 ions/cm2, the irradiated Ge was completely amorphized. A high density of small void-like cavities was observed after a Kr+ dose of 7×1014 ions/cm2. With increasing Kr+ ion dose, these cavities grew into large holes transforming the irradiated Ge into a sponge-like porous material after 8.5×1015 ions/cm2. The radiation-induced nucleation of void-like cavities in amorphous material is astonishing, and the final structure of the irradiated Ge with enormous surface area may have potential applications.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2677-2679 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonspiking (nonalloyed) Ge/Pd ohmic contact formed via solid phase reaction on an AlGaAs/GaAs high electron mobility transistor (HEMT) was investigated. The surface morphology of the Ge/Pd contact is smooth and planar with a typical contact resistivity of about 3×10−7 Ω cm2. The current-voltage characteristics of the HEMTs with the Ge/Pd contacts are similar to those with the conventional AuGe/Ni spiking (alloyed) contacts. Since only a thin substrate surface layer of 100–200 A(ring) was reacted with the Ge/Pd contact, we can conclude that ohmic contacts can be made to the two-dimensional electron gas without deep penetration of the metallization. This observation is in agreement with the concept that transport due to tunneling is significant across heterojunctions. The Ge/Pd contact may be potentially useful in HEMT integrated circuit technology.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 942-947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low resistance nonalloyed ohmic contact to n-GaAs is formed which utilizes the solid-phase epitaxy of Ge through PdGe. Discussion focuses on the conditions necessary to attain low specific contact resistivity (∼10−6 Ω cm2 on 1018 cm−3 n-GaAs) and on the interfacial morphology between the contact metallization and the GaAs substrate. MeV Rutherford backscattering spectrometry and channeling show the predominant reaction to be that of Pd with amorphous Ge to form PdGe followed by the solid-phase transport and epitaxial growth of Ge on 〈100〉 GaAs. Cross-sectional transmission electron microscopy and lattice imaging show a very limited initial Pd-GaAs reaction and a final interface which is planar and structurally abrupt to within atomic dimensions. The presence of excess Ge over that necessary for PdGe formation and the placement of Pd initially in contact with GaAs are required to result in the lowest contact resistivity. The experimental data suggest a replacement mechanism in which an n+-GaAs surface region is formed when Ge occupies excess Ga vacancies.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 243-246 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1621-1625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistance of the Ge/Pd and Si/Pd metalization scheme on n-GaAs was investigated. These two contact systems are based on solid-phase reactions, thus leading to nonspiking ohmic contacts to n-GaAs. The experimental results show that the ohmic behavior is likely due to both a highly doped surface n+ region and/or a small barrier at the interface. The origin of this small barrier and nonlinear current-voltage characteristics for certain samples are also discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A high-performance liquid chromatography method has been developed for simultaneous determination of triclosan (2,4,4-trichloro-2-hydroxydiphenyl ether) and triclocarban (3,4,4-trichlorocarbanilide) in cosmetic and pharmaceutical products. The two compounds could be separated on a Nucleosil C18 column and eluted with acetonitrile and water (70:30, v/v) as the mobile phase and detected with a differential refractive index detector. The retention times of triclosan and triclocarban were 5.81 and 2.99 min, respectively. The results obtained were in good agreement with those obtained by a differential pulse voltammetric method.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1233-1238 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron spectrograph is described that covers electron energies from 400 eV to 200 keV with an energy resolution of 10%. This overlaps the range of electrostatic deflection devices at low energy and solid state detectors at high energy. The spectrograph uses magnetic deflection of the electrons to achieve energy separation and images the full range of energies on a single plane. The magnetic circuit uses the fringing field of two axially located magnets to attain the large energy range. Six separate electron beams can be dispersed in the field, each entering the circuit from a different angle. This is a particular advantage when measuring plasma electron three-dimensional velocity distributions. The angular response of the instrument is particularly favorable and the stray magnetic field is sufficiently low to meet spacecraft requirements. Compared with electrostatic deflection devices, the spectrograph is particularly advantageous for measuring high energy electron plasma velocity distribution functions with fast time resolution at modest energy resolution.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of plasmas produced by radio-frequency heating in the ion cyclotron frequency range (ICRF) has been studied in the central cell of the Tara tandem mirror [Nucl. Fusion 22, 549 (1982); Plasma Physics and Controlled Nuclear Fusion Research 1986, Proceedings of the 11th International Conference, Kyoto (IAEA, Vienna, 1987), Vol. II, p. 251]. Ion cyclotron wave excitation by a slot antenna provided stability against macroscopic plasma motions in an axisymmetric configuration. The maintenance of macroscopic stability depended on the ICRF power, gas fueling rate, ion cyclotron resonance location, and ω/ωci at the antenna location. The ICRF ponderomotive force model is consistent with many of the observed stability features and predicts that the E+ component of the ion cyclotron wave was responsible for the stabilization. The Alfvén ion cyclotron microinstability was observed when the plasma β⊥ and anisotropy were sufficiently high. Magnetic probe measurements of the unstable mode identified it as an ion cyclotron wave and the instability threshold was within a factor of 2 of the theoretical value.
    Type of Medium: Electronic Resource
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