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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 34 (1978), S. 1042-1043 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary In young spontaneously hypertensive rats (SHR), dopamine β-hydroxylase (DBH) and phenylethanolamine N-methyltransferase (PNMT) activities were examined in the brainstem nuclei. Activation of noradrenergic neurons in the locus coeruleus, A2 and spinal intermediolateral cell areas, resulting in enhanced sympathetic nervous activity in the periphery, initiates hypertension. Adrenergic neurons, unchanged in these and A1 cell areas of young SHR, are not involved in the development of hypertension in SHR.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Bullous pemphigoid (BP) often provokes blood and tissue eosinophilia, which suggests that some chemoattractants modulate the eosinophil infiltration in BP. Eotaxin, a CC chemokine, strongly attracts eosinophils, and interleukin (IL)-5 induces eosinophil differentiation, proliferation and colony formation in vitro. Objectives To examine the correlation between levels of eotaxin and IL-5 and the number of lesional eosinophils, and the expression of eotaxin in BP lesions. Patients/methods In this study we measured eotaxin and IL-5 levels in blister fluid of BP by enzyme-linked immunosorbent assay. We also examined the expression of eotaxin in BP lesions by immunohistochemistry. Results Both eotaxin and IL-5 were detected at high levels in BP blister fluid. Blister fluid eotaxin, but not IL-5 levels, correlated significantly with the number of dermal infiltrating eosinophils. By immunohistochemistry, eotaxin was strongly expressed in epidermal keratinocytes around BP blisters. Conclusions These findings suggest that eotaxin and IL-5 are strongly associated with the tissue eosinophilia of BP. Therapies which aim to inhibit production of eotaxin and IL-5 may improve the inflammation and blister formation in BP.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1159-1164 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of silicon wafer surface orientation on very thin oxide quality were studied, testing Si(100) and (111) wafers. It has been found that the very thin oxide quality is determined by the silicon wafer surface orientation, and that when Si(111) is oxidized, SiO2/Si(111) interface microroughness increases as oxide becomes thicker than 10 nm, resulting in a degradation of oxide films quality on Si(111). When oxide thickness is decreased less than 10 nm, Si/SiO2 interface smoothness is maintained similar for Si(100) and (111) but SiO2/Si interface for Si(111) exhibits larger interface charges and larger threshold-voltage shift due to hot-electron injection than that for Si(100). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1554-1556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device length dependence of optical second-harmonic generation (SHG) in AlGaAs semiconductor quasiphase matched (QPM) waveguides with periodically crystal domain inverted gratings has been studied both experimentally and theoretically. It is found that the SHG power depends strongly on device length. An optimum device length for obtaining maximum SHG is shown for QPM-SHG devices with non-negligible waveguide propagation loss. It is also shown that this optimum device length can be predicted theoretically, making experimental optimization unnecessary. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The self-aligned formation of CoSi2 was achieved on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 °C with Si2H6. Self-aligned CoSi2 film without lateral growth of silicide was grown on the SEG Si layer by rapid thermal annealing at 700 °C in N2 ambient. The successful integration of the self-aligned CoSi2 and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    ISSN: 1468-2494
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In this study the photolightening behavior of blond hair was investigated. The results demonstrated that visible (VIS) and ultraviolet (UV) light lighten blond hair through different mechanisms. VIS light was found to contribute much more to the lightening of blond hair than UV light, and acted directly, while UV light only lightened blond hair that had been washed following irradiation. VIS and UV light both, however, lightened to a similar degree isolated melanin granules and decomposed melanin granules that were exposed on a cross section of blond hair. These results indicate that melanin granules are equally sensitive to both forms of light while blond hair is most sensitive to VIS light. The results also indicate that hair tissues, excluding melanin granules, are damaged by UV light but not by VIS light. Based on these facts, the hypothetical lightening mechanism of UV light is assumed to be that UV light preferentially attacks and damages hair tissues rather than melanin granules. This occurs only after the hair is washed, as the washing process removes the melanin granules that effuse from loose hair fibers. In contrast, VIS light preferentially attacks and decomposes the melanin granules rather than other tissues, and also results in the lightening of blond hair but without the need for subsequent washing. We also found that while VIS light destroys the structure of isolated melanin granules, UV light does not act in a similar manner. Consequently, it is proven that VIS and UV light attack different sites of the melanin granule, even though the lightening rates from both light sources are similar.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2220-2222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study single-carrier traps in a GaAs/AlxGa1−xAs heterostructure by observing random telegraph signals (RTSs), which are caused by the traps having energy levels within a few kBT of the Fermi level. RTSs are observed in a split gate device while a narrow channel is shifted by independently controlling the voltage applied to each part of the split gate. This measurement reveals the variations of the energy levels of traps with the channel position. From these variations the locations and the energy distributions of the traps are demonstrated. The strength of the confinement potential around the trap is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3525-3527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism of the annihilation of the defects by hydrogen annealing, because recently it has been shown that the grown-in defects were voids of octahedral shape. In this letter, a simulation model is presented which describes the annihilation process of void defects by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 999-1001 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside contact holes of 0.2 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2861-2863 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study carrier traps in a single electron transistor fabricated from a GaAs/AlxGa1−xAs heterostructure. In the heterointerface, there are many kinds of defects, which induce various trap levels in the band gap of AlxGa1−xAs or GaAs. The current through the transistor switches between two states because of trapping and detrapping of a single electron. The gate voltage dependencies of the switching indicate how the traps are spatially distributed. The possibility of the existence of a trap with multilevels is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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