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  • 1
    Electronic Resource
    Electronic Resource
    High-pressure Brillouin study of solid HBr at pressures up to 7 GPa (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 10617-10621 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-pressure Brillouin scattering measurements have been carried out in orientationally disordered (OD) phases I and I′ of solid HBr, which yielded the first determination of acoustic velocities for all directions, the refractive index, the polarizability, the density, adiabatic elastic constants (C11, C12, and C44), bulk modulus, and the elastic anisotropy as a function of pressure up to 7 GPa and at room temperature. The I→I′ phase transition in solid HBr was confirmed on the discontinuous pressure dependence at P=2.3 GPa for average errors of the least-squares fit by the analysis of in situ Brillouin spectroscopy. These elastic properties of solid HBr are compared with recent results in the OD phase I of solid HCl. We suggest that the form of the potential energy function for intermolecular forces in solid HBr is similar to that in HCl. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480414
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  • 2
    Electronic Resource
    Electronic Resource
    High-pressure Raman study of liquid and crystalline CH3F up to 12 GPa (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 1157-1163 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-pressure Raman spectra of liquid and crystalline CH3F were measured up to 12 GPa at 300 K in a gasketed diamond-anvil cell. Two solid phases have been found; the transition pressures of liquid to solid phase I and phase I to phase II were determined to be 2.75 and 3.63 GPa, respectively. Among these, the solid phase I is an orientationally disordered (plastic) phase, while the solid phases II is an orientationally ordered phase. The frequency of CF stretching ν3(A1) vibration shows a large red shift with a slope dν/dP of about −2.6 cm−1/GPa in the liquid phase, and it splits into the TO and LO modes in the two solid phases. The Fermi resonances between the same symmetry vibrations of ν1(A1) and 2ν5(A1), and of ν4(E) and 2ν5(E) have been observed and their behaviors have been analyzed by the Fermi resonance theory. The pressure dependence of the CH stretching mode is compared with those of the other fluorinated methanes CH2F2, CHF2Cl, and CHF3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469174
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7281-7283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361263
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  • 4
    Electronic Resource
    Electronic Resource
    Two-dimensional toroidal electron analyzer for energy and angular dispersive measurements (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1970-1977 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A toroidal electrostatic analyzer with a two-dimensional position-sensitive electron detector has been developed for the measurement of differential excitation cross sections in electron-ion collisions. The electron position is resolved simultaneously in the energy and angular dispersive directions of the analyzer. The present electron analyzer is specially designed with a narrow curved entrance slit and a wide exit slit coupled with an exit lens system after the toroidal deflector, which can give a wide energy dispersed range of 20% of the mean pass energy and a large angular range extending from 30° to 120°. The performance of the spectrometer has been studied by measuring the scattered electrons from Ar atoms and from a highly oriented pyrolytic graphite surface, indicating the usefulness of the present analyzer in electron spectroscopy. A brief description of the method for a spectrum transformation from Cartesian coordinates to polar coordinates is also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149696
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  • 5
    Electronic Resource
    Electronic Resource
    Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6745-6747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed very large tunneling magnetoresistance (TMR) in Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [11¯0] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of 〈100〉, which is induced by the zincblende-type Ga1−xMnxAs crystal structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357832
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  • 6
    Electronic Resource
    Electronic Resource
    Magneto-optical spectra of epitaxial ferromagnetic MnAs films grown on Si and GaAs substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6791-6793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic circular dichroism (MCD) spectra of ferromagnetic MnAs epitaxial thin films of (1¯101), (1¯100), and (0001) crystallographic growth orientations. The films were grown on Si(001), Si(111), GaAs(001), and GaAs(111)B substrates by molecular-beam epitaxy. We have found strong crystal orientation dependence of MCD spectra of MnAs films in terms of characteristic features and absolute intensity of MCD signals. We have also measured temperature dependence of MCD spectra on a (0001) MnAs film. Features at low temperatures are found to be different from those at room temperature. Our experimental results are compared with the ionic model for the electronic structure of NiAs-type MnAs and with magneto-optical Kerr ellipticity spectra recently calculated using an all electron full potential linear muffin-tin orbital method. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372843
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  • 7
    Electronic Resource
    Electronic Resource
    1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum-well lasers grown by molecular-beam epitaxy with high differential gain and low threshold current density (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 449-451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1.5 μm GaInAs/AlGaInAs multiquantum-well (MQW) lasers with 1% compressively strained quantum wells were grown by molecular-beam epitaxy. The effective differential gain (g0) determined from the squared relaxation oscillation frequency versus output power relations is a high value of 9.3×10−16 cm2 in long-wavelength lasers. On the other hand, the effective transparent carrier density (n0) of strained-layer MQW lasers determined from the measurement of the spontaneous carrier lifetime was found to be very high, which is different from the theory of strain effects. However, by taking the carrier transport effect into account, it was shown that (1) for the strained MQW lasers the intrinsic transparent carrier density is lower than that of the lattice-matched MQW lasers, and (2) the intrinsic value of g0 is estimated to be 28–56×10−16 cm2, which is close to the theoretically predicted value. By improving the laser structure to have better carrier transport, much higher effective differential gain and lower effective transparent carrier density can be expected. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114532
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  • 8
    Electronic Resource
    Electronic Resource
    The present status of the Tokyo electron beam ion trap : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 694-696 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recent progress of the Tokyo electron beam ion trap (Tokyo-EBIT) project is described. The Tokyo-EBIT is of an original design and construction with several features different from other EBITs in the world. The maximum energy and current of the electron beam are designed to be 340 keV and 300 mA with a magnetic field of 4.5 T. The ongoing and planned physics experiments are described and the results for the initial stage of operation of the Tokyo-EBIT are given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148555
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  • 9
    Electronic Resource
    Electronic Resource
    Structural and electronic transport properties of polycrystalline p-type CoSb3 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5270-5276 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electronic transport properties of polycrystalline p-type CoSb3 with different grain sizes (about 3 and 3×102 μm) were investigated. The magnetic susceptibility was also measured. Samples were characterized by x-ray diffractometry, electron-probe microanalysis, and optical microscope observation. Samples were found to be stoichiometric and homogeneous. The Hall carrier concentration of the samples is of the order of 1018 cm−3 and weakly dependent on the temperature. The temperature dependence of the Hall mobility suggests that the predominant scattering mechanism drastically changes depending on grain size: for large grain size a combination of the neutral impurity scattering and the acoustic phonon scattering, and for small grain size the ionized impurity scattering. The magnetic susceptibility was found to be essentially diamagnetic independently of grain size, and to vary slightly with temperature. The weak temperature dependence of the susceptibility can be explained by taking into account the three contributions of ion cores, conduction electrons, and trace amounts of magnetic impurities. From the analysis of the susceptibility due to conduction electrons, the band gap energy was determined to be about 70–80 meV, consistent with a recent band structure calculation. Although the effects of nonmagnetic impurity phases segregated (Sb, etc.) on the scattering mechanism are not clear, the grain size is one of the key factors determining the transport properties of polycrystalline CoSb3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367350
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  • 10
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of a GaAs:MnAs hybrid structure sandwiched by GaAs/AlAs distributed Bragg reflectors: Enhanced magneto-optical effect and theoretical analysis (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1523-1525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a multilayer structure consisting of a semiconductor-magnetic hybrid material GaAs:MnAs and GaAs/AlAs distributed Bragg reflectors, that is a one-dimensional semiconductor-based magnetophotonic crystal. Significant enhancement of magneto-optical effect was demonstrated at a controlled wavelength at room temperature. Magneto-optical spectra of this multilayer system were well explained by theoretical calculations, and the mechanism for the enhancement of magneto-optical effect was shown. Also, the required conditions for application to optical isolators are discussed and some potential solutions are indicated. Since our structure is composed of all semiconductor-based materials, the present results potentially lead to semiconductor based magneto-optical devices integrated with III–V-based optoelectronics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354657
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