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  • 1
    Electronic Resource
    Electronic Resource
    Case 2 (2002)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 27 (2002), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2002.01042.x
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  • 2
    Electronic Resource
    Electronic Resource
    Ultraviolet-induced generalized acquired dermal melanocytosis with numerous melanophages (2000)
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 142 (2000), S. 0 
    Details
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2133.2000.03271.x
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  • 3
    Electronic Resource
    Electronic Resource
    Single-electron memory using carrier traps in a silicon nitride layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124159
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  • 4
    Electronic Resource
    Electronic Resource
    Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 795-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose doped-thin-Si-film single-electron transistors (DS-SETs), which are fabricated from a highly doped Si film in a silicon-on-insulator substate by electron-beam lithography with a high-resolution resist (calixarene) and dry etching with CF4 gas. Because the structure can be well controlled, the DS-SET with a 45-nm-diam island shows nearly ideal characteristics of SETs with a charging energy of 1.4 meV. The results demonstrate that single-electron tunneling occurs through a single island without any isolated islands formed in potential fluctuations. We also discuss the discreteness of energy levels in a Si island. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120896
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  • 5
    Electronic Resource
    Electronic Resource
    Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a chloromethylated calixarene, p-chloromethylmethoxcalix[n]arene (CMC[n]AOMe) (n=5,6,7), as a negative resist in electron-beam lithography. Each CMC[n]AOMe resist has a resolution of about 12 nm and a sensitivity of about 0.8 mC/cm2 which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a CMC[n]AOMe resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and 10-μm length were performed without any breaking. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126957
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  • 6
    Electronic Resource
    Electronic Resource
    Direct observation of hot-electron energy distribution in silicon metal–oxide–semiconductor field-effect transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1113-1115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly observed the energy distributions of hot electrons in Si metal–oxide–semiconductor field-effect transistors. We used a lateral hot-electron transistor employing two potential barriers (an emitter barrier and a collector barrier) that divided the Si surface into three regions (the emitter, base, and collector). For an emitter-base voltage of −1.04 V, hot electrons with an excess energy of 0.7 eV were detected at the collector. The ratio of hot electrons to the injected electrons was 1.3%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124613
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  • 7
    Electronic Resource
    Electronic Resource
    Characteristic length of hot-electron transport in silicon metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2618-2620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic length of hot-electron transport in an inversion layer at a Si surface is estimated by using lateral hot electron transistor, which has an upper gate and two lower gates. The inversion layer formed by biasing the upper-gate voltage is separated into three channel regions (the emitter, collector, and base) by the two lower gates. We find that the characteristic length depends on both the upper-gate voltage and the injection energy and ranges from 19 to 27 nm. These results show that hot electrons are affected by electron–electron scattering or surface–roughness scattering and that hot-electron transport plays a crucial role in Si metal–oxide–semiconductor field effect transistors with gate lengths of 20 nm or less. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126427
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  • 8
    Electronic Resource
    Electronic Resource
    Calculation of nuclear spin–spin couplings. VIII. Vicinal proton–proton coupling constants in ethane (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 6597-6600 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ab initio self-consistent-field (SCF) and electron correlation calculations have been carried out for the dihedral angle dependence of the vicinal proton–proton coupling constants, 3JHH, in ethane molecule. The four contributions to 3JHH, (JFC, JSD, JOP, and JOD) have been computed with the three different basis sets, [5s2p1d/2s1p], [5s3p1d/3s1p], and [7s4p2d/5s2p]. The Fermi contact (FC) contribution was largest and the spin–dipole (SD) contribution was smallest. The FC and orbital paramagnetic (OP) contributions showed large basis set dependence, but the SD and orbital diamagnetic (OD) contributions presented little basis set dependence. The calculated total SCF contribution to 3JHH was higher than the experimental coupling. Using the Møller–Plesset perturbation theory we have introduced electron correlation effects on the FC and OP terms. The correlation effects on the OP term was shown to be negligible. The second-order correlation in the FC term was very large and amounted to half of its SCF value in magnitude with opposite sign. However, the third-order correlation in the FC contribution was small. Unfortunately, the calculated 3JHH value including correlation corrections through third order was too small compared to the experimental one. The poor agreement between calculation and experiment is claimed to be due to higher than third-order correlations in the FC term. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470388
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  • 9
    Electronic Resource
    Electronic Resource
    Calculation of nuclear spin–spin couplings. X. Analytical derivative method of perturbation energy (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 3532-3539 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The expression for the analytical derivatives of the second-order correlation energy was derived for a system under the spin-dependent perturbations, and it was applied to the correlated calculation of the 3JHH's in ethane, methanol, and methylamine. The calculation showed that the addition of tight s-type functions to the basis set considerably affects the Fermi contact (FC) contribution. Furthermore, the third- and fourth-order correlations were also evaluated for the FC contribution with the finite perturbation theory. The three noncontact contributions were computed at the Hartree–Fock (HF) level. The total contribution to the 3JHH in ethane was significantly lower than the experimental value. The calculated 3JHH's in methanol and methylamine were nearer to the experimental couplings than in ethane. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.480508
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  • 10
    Electronic Resource
    Electronic Resource
    Calculation of nuclear magnetic shieldings. X. Relativistic effects (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3175-3186 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The lowest order relativistic effect theory for nuclear magnetic shieldings was derived from a two-component positive energy Hamiltonian. It was shown that the previous relativistic shielding theory based on the two-component Hamiltonian is not gauge invariant and the new terms have to be added to make a result gauge invariant. The presented theory is gauge invariant to the order of (Z/137)4 where Z is the atomic number of the heaviest atom in the molecule. One of the new contributions to the relativistic magnetic shieldings is a second-order perturbation term due to the combination of the spin-orbit interaction and the Fermi-contact interaction. A numerical estimation for this term was performed for the four hydrogen halides, HF, HCl, HBr, and HI. The computational results showed that the contribution of this term to the hydrogen shieldings is negligibly small, but the contribution to the halogen atoms is considerable. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472165
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