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  • 2000-2004  (45)
  • 1990-1994  (79)
  • 1985-1989  (63)
  • 1960-1964  (1)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various types of planar inductors have been proposed for reducing the volume of switching converters. Planar inductors using amorphous alloy ribbons as magnetic layers are also studied. The purpose of this study is to clarify the relation between the electrical performance of the inductor, and the properties and composition of amorphous ribbon. The experimental results show that superimposed dc current, I80, increases linearly with the product of Bm and ribbon thickness t, where I80 is defined as the dc current corresponding to an inductance which decreases to 80% of an initial value. In the case of stacking amorphous alloy ribbons, I80 increases with gradual approach to saturation, as the stack thickness increases regardless of ribbon thickness. However, the saturation value of I80 depends on ribbon thickness. The saturation value increases with increasing ribbon thickness. The above results suggest that from a practical viewpoint the use of thick ribbons is preferable. With respect to alloy composition, the Fe-based alloy is more favorable compared with the Co-based alloy because of its higher stored magnetic energy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 26 (1993), S. 559-560 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3856-3858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional dependence of recording-power sensitivity and recording-noise characteristics of TbFeCo and TbDyFeCo films have been studied systematically. The sensitivity depends on the compositional ratio of rare earth (RE) and transition metal (TM) rather than on Co content. This is explained by the fact that the temperature at which the coercive force (Hc ) coincides with the bias magnetic field of 500 Oe, hereafter denoted as T', varies drastically by altering the RE-to-TM ratio. High recording noise is observed for compositions having Tcomp close to TC. When TC−Tcomp(approximately-greater-than)70 °C, optimal carrier-to-noise ratios are obtained. These results are explained qualitatively by the behavior of domain-wall motion in the vicinity of the magnetically reversed domain.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1424-1427 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafine ZnFe2O4 particles less than 10 nm in diameter formed by the coprecipitation method were observed using transmission electron microscopy. The chemical composition of these particles was consistent with that of the stoichiometric bulk material. The apparent lattice structure could be observed. These observations revealed that particles 5 nm in diameter were fine, defect-free, and cubic single crystals having a spinel structure. The particle surface became more and more circular with decreasing particle size. Even a particle as small as 2 nm was seen to be homogeneous and possess a spinel structure. To determine the particle size it was necessary to disperse particles by covering their surfaces with a double-adsorbed surfactant film. The particle size distribution was seen to be approximately log normal.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6701-6703 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoluminescence from mesa-shaped Cd0.95Mn0.05Te/Cd0.90Mg0.10Te quantum wires were studied. The Zeeman shift of the excitonic photoluminescence from the quantum wires in a magnetic field is significantly decreased, compared to that from quantum wells. This decrease results from the possible reduction of the exchange interaction of electrons and holes with Mn ions in low dimensional structures. In the excitonic photoluminescence of the quantum wires with the width of 50–100 nm, the transient relaxation of the luminescence peak energy due to the excitonic magnetic polaron formation is remarkably less than that in the quantum well. This result shows the suppressed excitonic magnetic polaron effect in the narrower quantum wires. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6457-6459 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lifetime of excitons in Cd1−xMnxTe/Cd1−yMgyTe single quantum wells was investigated by time-resolved photoluminescence spectroscopy. Spin-flips between dark and bright excitons remarkably change the excitonic lifetime yielding a two-exponential decay in the photoluminescence intensity. The temperature dependence of the two decay times shows that the spin-flip rate depends strongly on the formation of excitonic magnetic polarons. By forming polarons, the spin-flip rate from dark excitons to bright excitons is reduced effectively by the spin- barriers of the polarized Mn ions, which extends significantly the luminescence decay time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 952-954 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-current microwave ion source which is used for O+ ion implantation in separation by implanted oxygen (SIMOX) wafer fabrication is presented. The source consists of a new transform waveguide which efficiently propagates a 2.45 GHz microwave power into the ion source, a cylindrical plasma chamber of 90 mm in diameter, and a multiaperture extraction electrode system. The extracted beams are mass separated and then postaccelerated up to 200 keV. Ion source operates stably for a long time and the microwave absorption efficiency is as high as 80%. A total extraction current of 240 mA is obtained at the extraction voltage of 50–60 kV and the mass-separated O+ current reaches about 100 mA at the same extraction voltage. The data show that the ion source has a good potential to provide 100 mA-class O+ ion beams stably in the wide energy range demanded for SIMOX ion implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1515-1519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded α-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [11¯0]SiC//[0001]Si3N4 and nearly (111)SiC//(101¯0)Si3N4 with low-angle discrepancy of either 3° or 5°. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3928-3932 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6050-6052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin Co-based amorphous ribbons with a thickness of 6–10 μm were fabricated by a single roller quenching method in vacuum. The compositions of the alloys were zero magnetostrictive: Fe4.7Co70.3Si15B10 and (Fe0.05Co0.95)71(Si0.5B0.5)29. The ribbons obtained had good smoothness and dimensional uniformity. The core loss of toroidal samples 15 mm in diameter was measured after annealing. The loss decreased with decreasing ribbon thickness. In the case of 6.4-μm-thick (Fe,Co)71(Si,B)29 amorphous ribbon, the values at 100 kHz and 1 MHz were 40 mW/cm3 and 1.8 W/cm3 for Bm=0.1 T, respectively. The former was 1/4 that of Mn-Zn ferrites or 1/2 that of 5-μm-thick Supermalloy tape wound core loss. The latter was (2)/(3) that of 5-μm Supermalloy tape wound core loss. In addition, the initial permeability beyond 100 kHz was also markedly improved by thickness reduction. The values of 6.4-μm-thick (Fe,Co)71(Si,B)29 ribbon measured at 1 and 10 MHz were about 7000 and 1000 for Hm=2 mOe, respectively.
    Type of Medium: Electronic Resource
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