Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Laser photochemistry with polarized light in low-temperature glasses (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 2473-2477 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100258a010
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High resolution frequency selective photochemistry of phycobilisomes at cryogenic temperatures (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 871-874 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Highly frequency selective photochemistry at cryogenic temperatures is used to gain information on the excited state dynamics of large biomolecular aggregates, the phycobilisomes from the blue–green alga (cyanobacterium) Masticogladus laminosus. In particular, we show that in spite of the well organized structure of these aggregates disorder on a microscopic level dominates the optical spectra. The hole burning reaction in the resonantly excited chromophores is most probably due to a conformational change in the neighborhood of the chromophore. From the widths of the holes energy transfer times between different pigments on the order of 16 ps are determined. These transfer times are independent of the excitation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455209
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    A hole burning study of excitonic states of chain molecules in glasses (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7988-7993 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Thermal broadening of spectral holes burnt into excitonic states of long chain molecular aggregates of pseudoisocyanine iodide is investigated over a temperature range from 350 mK to 80 K. The results differ very much from the usual behavior of small molecules in glasses. We found that extended states are almost completely decoupled from the amorphous host lattice and spectral diffusion effects play a minor role. The homogeneous linewidth is independent of temperature below 10 K. Above, thermal broadening occurs in two steps: there is a weak onset around 15 K and a strong onset around 65 K. The data can be fitted by a superposition of two exponentials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457217
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Conformational transitions of long chain molecules in frozen solutions (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 7296-7299 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We show by temperature-cycling-hole-burning experiments that the conformational barriers of one-dimensional long chain aggregates of pseudoisocyanine iodide in frozen solutions follow a distribution of the form Pv(V)∼1/V . This is the same distribution as has been measured for three-dimensional glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457297
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Probing of conformational relaxation processes of proteins by frequency labeling of optical states (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 1270-1273 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We show how optical frequency labeling at cryogenic temperatures can be used to probe in a most direct way protein substates and to elucidate the nature of the structural relaxation processes involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456131
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambient (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2543-2545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basic chemical equilibrium data for the Si/SiO2/O2/H2O system have been employed to compute critical epitaxial preclean and growth parameters. Preclean and growth experiments were conducted and compared with predicted behavior. A procedure is given that allows for the design of an epitaxial deposition process for most commercially available epitaxy reactor systems. Following this scheme, good crystal quality silicon was deposited at temperatures as low as 890 °C and at a deposition pressure of 150 Torr. For current commercially available reduced pressure reactor systems, a practical low-temperature limit of about 810 °C is predicted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100530
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Early stages of mechanical crystallization of amorphous FeZrBCu soft magnetic material (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2464-2468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline Fe-base soft magnetic materials with high saturation magnetization have been obtained by crystallization of FeZrBCu amorphous precursors. In contrast to the conventional thermal crystallization, mechanical crystallization provides an alternative route for the generation of nanocrystalline materials using a high energy ball mill. Special emphasis is put here on the early stages of the transformation. X-ray diffraction, Mössbauer spectroscopy, and magnetization measurements are used to characterize the material. We find a continuous increase of the saturation magnetization accompanied by an increase of the crystalline fraction. The coercivity shows a different behavior with a large increase after very short milling within the amorphous state and a decrease for long milling duration. The influence of the deformation process on the magnetic anisotropy and the coercivity is discussed in terms of stresses and shear band formation. The results are compared with the phase formation and magnetic properties of thermally crystallized FeZrBCu samples and mechanical crystallization studies of other materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372203
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    The dependence of silicon selective epitaxial growth rates on masking oxide thickness (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1713-1716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth rates in selective epitaxial depositions (SEG) and epitaxial lateral overgrowth (ELO) in the SiCl2H2-HCl-H2 system were studied as a function of masking oxide thickness. Enhanced growth was observed on wafers with thin (80 nm), as compared to thick (〉300 nm), masking oxides. The higher growth rates on wafers with thin oxides were attributed to their higher surface temperature. The higher surface temperature for wafers with thin oxides is demonstrated to be due to decreased radiant heat transfer as compared to wafers with thicker oxides. The dependence of oxide thickness on growth rates was global, meaning that the bulk or large area field oxide thickness, and not the local oxide thickness in the immediate vicinity of the seed window, determined the growth rates. Hence, the dependence of growth rates on masking oxide thickness is critical in understanding, designing, and comparing experiments studying epitaxial deposition processes, but is less critical for technological applications of SEG and ELO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342943
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Oxide degradation during selective epitaxial growth of silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3538-3541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A derivative of selective epitaxial growth and epitaxial lateral overgrowth, has been devised to create single-crystal silicon on insulator structures. The effect of conditions present in selective epitaxial growth and epitaxial lateral overgrowth on the electrical characteristics of the insulating masking oxides has been studied. It was determined that thin (〈150 nm) oxides were attacked by the ambient employed in selective epitaxy. The rate of degradation increased with decreasing oxide thickness and with the addition of silicon-containing species to the gas phase. The observed defect formation may be related to the oxide decomposition during annealing in oxygen-free ambients and the undercutting of masking oxide at the Si-SiO2 interface during the in situ preclean step used in epitaxial processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341492
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Structural studies of phase transitions in poly(di-n-alkylsiloxanes). 1. Poly(dimethylsiloxane) and poly(diethylsiloxane) (1987)
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 1975-1979 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00174a048
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...