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  • 2000-2004  (2)
  • 1985-1989  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 19-21 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation of interband-resonant light (∼800 nm) by intersubband-resonant light (5–7 μm) was investigated in n-doped AlGaAs/GaAs multiple quantum wells by a two-color femtosecond pump-probe technique. Modulation with a recovery time of ∼1 ps is observed in a plainer-type modulation device at room temperature. The modulation of interband absorption coefficient is ∼1000 cm−1 when the energy density of the intersubband light pulse is ∼4 fJ/μm2. The modulation efficiency indicates that 99% modulation can be achieved with a control pulse energy of ∼1 pJ when a conventional waveguide-type device structure is utilized. The mechanism which determines the modulation speed is discussed in terms of carrier relaxation process. It is shown that the modulation speed is mainly determined by the inter- and intrasubband relaxation times, where the latter is influenced by hot phonon effects. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4509-4511 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improvement of an all-optical modulation scheme that utilizes an intersubband transition is proposed and investigated in connection with intersubband carrier relaxation dynamics. N-doped GaAs/AlGaAs quantum wells are pumped by an ultrashort (∼120 fs) intersubband-resonant pulse and probed by an interband-resonant white-light continuum. Ultrafast modulation speed of ∼0.4 ps is demonstrated, which is faster than that of the previous scheme by as much as a factor of 10. It is found that a large part of the carriers, which are excited from the first conduction subband to the second conduction subband, transfer to unknown trapping states at a relaxation time that is comparable to that of the pump–pulse duration. The existence of the carrier relaxation path via L valley subbands is strongly suggested as the cause. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1261-1265 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth temperature (TG) dependence of the acceptor concentrations (NA) in Al0.1Ga0.9Sb grown by liquid phase epitaxy in a very wide growth temperature range (250–500 °C) was investigated. It was found that NA varies with TG down to 350 °C as NA ∝exp(Ea/kBTG) with Ea=0.47 eV and that below 350 °C NA fluctuates depending highly on growth conditions. Acceptors in Al0.1Ga0.9Sb grown above 350 °C were concluded to be intrinsic. These observations were successfully made using the improved extremely low-temperature growth process. The evaluation technique of measuring the impurity concentration in a thin epitaxial layer on the conductive GaSb substrate by C-V characteristics of metal-insulator-semiconductor structures was employed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Graefe's archive for clinical and experimental ophthalmology 225 (1987), S. 335-337 
    ISSN: 1435-702X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We examined biochemically the lysosomal enzyme activities in tear fluids from patients with mild myopia, senile cataract, and Terrien's marginal corneal degeneration. Tear acid phosphatase activities in Terrien's degeneration were almost the same as those in mild myopia and senile cataract, while those ofN-acetyl-β-d-glucosaminidase in Terrien's degeneration were higher. The high activity of tearN-acetyl-β-d-glucosaminidase may be derived from the lacrimal gland and infiltrate histiocytelike cells in Terrien's marginal corneal degeneration.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Sapphire plates, cut parallel to an {0001} plane, have been implanted with 300 keV nickel ions to doses ranging from 5×1012 to 1×1017 Ni cm−2 at specimen temperatures of 100, 300 and 523 K, in order to investigate the effect of implantation temperature on the mechanical property changes in sapphire caused by ion implantation. The measured changes in surface hardness, surface fracture toughness and bulk flexural strength were found to depend strongly on the implantation temperature, and were largely correlated with the residual surface compressive stress measured by using a cantilever beam technique. The surface amorphization that occurred only by the implantation at 100 K and at doses larger than ∼2×10s15 Ni cm−2 reduced the hardness to ∼0.6 relative to the value of the unimplanted sapphire, and considerably increased the surface plasticity. Furthermore, the amorphization was found to involve a large volume expansion of ∼30% and to change drastically the apparent shape and size of a Knoop indentation flaw made prior to implantation. This effect was suggested to reduce stress concentrations at surface flaws and hence to increase the flexural strength.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 4 (1985), S. 523-525 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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